Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method of nickel target material and nickel target material assembly

A manufacturing method and nickel target technology, applied in the field of target processing, can solve problems such as uneven internal structure, inability to meet the requirements of semiconductor sputtering process, and coarse crystal grains

Active Publication Date: 2016-03-16
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The problem solved by the present invention is that the existing nickel target manufacturing method has uneven internal structure, coarse grains, and low magnetic permeability (PFT, PassThroughFlux, that is, the ratio of the magnetic flux of the sample to be tested to the standard magnetic flux), which cannot meet the requirements. Higher semiconductor sputtering process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of nickel target material and nickel target material assembly
  • Manufacturing method of nickel target material and nickel target material assembly
  • Manufacturing method of nickel target material and nickel target material assembly

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0063] As described in the background art, in the prior art, the processing technology of plastically deforming high-purity nickel ingots to produce high-purity nickel targets for semiconductors is less involved and incomplete. Therefore, how to produce nickel that meets the requirements The target material has become one of the most important problems to be solved at present.

[0064] PVD is usually carried out by magnetron sputtering. The so-called magnetron sputtering means that the plasma generated by the rare gas bombards the surface of the cathode sputtering target under the interaction of the electric field and the magnetic field, so that the molecules on the surface of the target, Atoms and electrons are sputtered out, and the sputtered particles have a certain kinetic energy, and shoot to the surface of the substrate in a certain direction, and deposit on the surface of the substrate to form a coating. The inventors found that in the process of coating by magnetron sp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
Login to View More

Abstract

The invention provides a production method of a nickel target and a nickel target component. The production method of the nickel target comprises the following steps of providing a nickel ingot; performing hot forging on the nickel ingot to form a first nickel target blank; performing first heat treatment on the first nickel target blank to form a second nickel target blank, wherein the temperature of the first heat treatment is 450-550 DEG C, and the temperature is maintained for 1-2 hours; after the first heat treatment, performing hot rolling on the second nickel target blank to form a third nickel target blank; performing second heat treatment on the third nickel target blank to form a fourth nickel target blank, wherein the temperature of the second heat treatment is 300-500 DEG C, and the temperature is maintained for 1-2 hours; after the second heat treatment, performing cold rolling on the fourth nickel target blank to form a fifth nickel target blank; performing third heat treatment on the fifth nickel target blank to form the nickel target, wherein the temperature of the third heat treatment is 200-300 DEG C, and the temperature is maintained for 1-2 hours. By adopting the technical scheme, the produced nickel target has relatively uniform internal organization and good magnetic property.

Description

technical field [0001] The invention relates to the field of target processing, in particular to a method for manufacturing a nickel target and a nickel target component. Background technique [0002] Physical Vapor Deposition (PVD, Physical Vapor Deposition) is widely used in high-end industries such as optics, electronics, and information, such as: integrated circuits, liquid crystal displays (LCD, Liquid Crystal Display), industrial glass, camera lenses, information storage, ships, chemicals, etc. Metal target components used in PVD are one of the most important raw materials in the manufacturing process of integrated circuits and liquid crystal displays. [0003] The metal target component is composed of a metal target that meets the sputtering performance and a back plate with a certain strength. The back plate can play a supporting role when the metal target assembly is assembled to the sputtering base station, and has the effect of conducting heat. With the continuo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C22F1/10
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽袁海军
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com