MOCVD apparatus and MOCVD heating method

A technology of equipment and trays, applied in chemical instruments and methods, gaseous chemical plating, crystal growth, etc., can solve the problems of film growth speed difference, uneven temperature, inconsistent deposited film, etc., and realize the processing of large-size substrates , Improve temperature uniformity, improve the effect of growth quality
CN103628040AActive Publication Date: 2014-03-12BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Publication Date
2014-03-12

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Abstract

The present invention discloses a MOCVD apparatus and a MOCVD heating method. The MOCVD apparatus comprises a reaction chamber, an induction coil and a tray, wherein the induction coil is positioned outside the reaction chamber, the tray is positioned inside the reaction chamber, the induction coil is provided for generating a magnetic field and heating the tray through the magnetic field, and the tray is provided for placing a substrate and generating a relative movement between the tray and the magnetic field so as to make the substrate alternately pass through the magnetic force line sparse area and the magnetic force line dense area in the magnetic field. According to the embodiment of the present invention, the substrate on the tray alternately passes through the magnetic force line sparse area and the magnetic force line dense area in the magnetic field, such that heating temperatures of different areas on the tray are uniform, and temperature uniformity on the substrate is increased so as to improve epitaxial wafer quality and achieve large epitaxial wafer processing.
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Description

technical field

[0001] The invention relates to semiconductor technology, in particular to an MOCVD device and a MOCVD heating method. Background technique

[0002] MOCVD (Metal-organic Chemical Vapor Deposition, metal-organic compound chemical vapor deposition) is a growth technology for vapor phase epitaxy on a substrate by thermal decomposition reaction through crystal growth source materials. MOCVD equipment is a device that deposits thin films on the surface of a substrate using MOCVD technology. When using MOCVD equipment for thin film deposition, the process time is relatively long, typically, 5-6 hours to complete a complete process.

[0003] In order to improve the production efficiency of MOCVD equipment, a placement method that can place multiple substrates at the same time is adopted. At present, one of the main methods used is the large tray method. Please refer to figure 1 , wherein, a plurality of small trays 11 are placed on the large tray 10, and a plurali...

Claims

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