Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Integration method of leadless planar surface mounting type thick film hybrid integrated circuit

A thick-film hybrid and integrated circuit technology, which is applied in the direction of circuits, electrical components, and electric solid-state devices, can solve the problem of no lead-free planar surface-mounted thick-film hybrid integrated circuits, etc., and achieve broad market prospects and application space and volume The effect of shrinking and improving reliability

Active Publication Date: 2014-03-12
GUIZHOU ZHENHUA FENGGUANG SEMICON
View PDF7 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are currently no applications for leadless planar surface mount thick film hybrid integrated circuits

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Integration method of leadless planar surface mounting type thick film hybrid integrated circuit
  • Integration method of leadless planar surface mounting type thick film hybrid integrated circuit
  • Integration method of leadless planar surface mounting type thick film hybrid integrated circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0018] Embodiment: the technological process of the inventive method is as Figure 10 As shown, the process includes the following steps:

[0019] (1) Preparation of ceramic substrate, gold paste, and ruthenium-based resistor paste;

[0020] (2) Cleaning and drying of substrates, cleaning and drying of shells;

[0021] (3) The substrate is drilled through the hole, and the aperture accuracy is controlled within 0.1 μm;

[0022] (4) Thick-film conductor paste printed conduction tape, and dried at 150°C for 10 minutes;

[0023] (5) Through-hole metal paste filling;

[0024] (6) The welding surface of the terminal is thickened and printed once;

[0025] (7) Print the stop band with resistive paste, and dry it at 150°C for 10 minutes;

[0026] (8) Film formation is sintered at 850°C for 10 minutes, and the total time of film formation and sintering is 35 minutes;

[0027] (9) Laser adjustment resistance;

[0028] (10) Electrical parameters and functional tests;

[0029] (1...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an integration method of a leadless planar surface mounting type thick film hybrid integrated circuit. The method comprises the steps of directly manufacturing a planar external connecting end of a thick film hybrid integrated circuit on the bottom surface of a ceramic wafer, carrying out hybrid integration on the front surface and the bottom surface of the ceramic wafer, carrying out sealing and insulation protection on a thick film conduction band, a thick film stop band, a thick film capacitor and a thick film inductor by insulating dielectric thick films and carrying out coating and curing protection on a bare chip of a semiconductor by insulating dielectric paste. The method has the characteristics that (1) no packaging shell is adopted so that the size is reduced; (2) no pin or corresponding internal lead is adopted so that the high-frequency interference is reduced; (3) surface mounting type installation is realized so that the equipment size is reduced and the high-frequency performance of equipment is improved; (4) the system reliability of the equipment is improved. The integrated circuit produced by the method is widely applied to the fields of spaceflight, aviation, ships, electronics, communications, medical equipment, industrial control and the like and is particularly suitable for the fields of equipment system with the requirements on miniaturization, high frequency and high reliability.

Description

technical field [0001] The present invention relates to an integrated circuit, more specifically, to a thick-film hybrid integrated circuit, especially to a surface-mounted thick-film hybrid integrated circuit. Background technique [0002] In the original hybrid circuit integration technology, on the ceramic substrate, the semiconductor chips and chip components are directly mounted on the thick film substrate, and then the bonding wire (gold wire or silicon aluminum wire) is used to bond the chip and the substrate. Wire bonding, the wire bonding of the substrate and the pins, completes the entire electrical connection, and finally seals the tube base and the tube cap in a specific atmosphere. The main problem of the original hybrid circuit integration technology is that the internal circuit must be packaged with the tube base and the tube cap. Due to the large size of the tube base and the tube cap, the long pins, and the many and long inner leads connecting the pins, The...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/48H01L21/56H01L21/98
CPCH01L2224/16225H01L2224/45144H01L2224/48228H01L2924/00H01L21/486H01L21/50H01L21/56H01L24/85H01L2224/85
Inventor 杨成刚赵晓辉苏贵东王德成
Owner GUIZHOU ZHENHUA FENGGUANG SEMICON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products