Quantum well hemt device and its preparation method and two-dimensional electron gas distribution method
A two-dimensional electron gas and distribution method technology, applied in the field of semiconductor devices, can solve problems such as exhaustion of two-dimensional electron gas and affecting device performance
Active Publication Date: 2016-03-02
NO 50 RES INST OF CHINA ELECTRONICS TECH GRP
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Problems solved by technology
Due to the negative polarized charges at the interface between the GaN channel layer and the AlN lower barrier layer, the device has a significant depletion effect on the two-dimensional electron gas. In order to counteract this depletion effect, the lower half of the GaN channel layer must be depleted. Selective donor doping, but excessive doping will form a parasitic channel near the main channel, seriously affecting device performance
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[0029] The present invention will be described in detail below in conjunction with specific embodiments.
[0030] 1. Construct the structural model of the AlN / GaN / AlN quantum well HEMT device with selective doping of the channel layer, such as figure 1 As shown, on a 500 μm thick AlN single crystal substrate, a 1 μm thick AlN lower barrier layer, a 50 nm thick GaN channel layer, a 3.5 nm thick AlN upper barrier layer and a 5 nm thick Al 2 o 3 gate dielectric layer, and then form the source and drain electrodes on the AlN upper barrier layer, and the Al 2 o 3 A gate electrode is formed on the gate dielectric layer. The length of the source, drain and gate electrodes is 1 μm, and the total device length is 5 μm. The lower 25nm part of the GaN channel layer is donor-doped with Si ions, while the upper 25nm part remains in the intrinsic state;
[0031] 2. Prepare experimental test samples and extract key material parameters, that is, sequentially grow a 1 μm thick AlN lower b...
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The invention provides a quantum well HEMT (high electron mobility transistor) device and a producing method thereof and a two-dimensional electron gas distribution method. The two-dimensional electron gas distribution method includes that an A1N lower barrier layer, a GaN channel, an A1N upper barrier layer and an A1203 gate dielectric layer are sequentially formed on an A1N single crystal substrate, a source electrode and a drain electrode are formed on the A1N upper barrier layer, a gate electrode is formed on the A1203 gate dielectric layer, a lower half of the GaN channel layer is subjected to selective donor doping with Si ion while an upper half of the same keeps in an eigen state, and the selective donor doping concentration of the lower half of the GaN channel layer is controlled to be (6.8+ / -0.05)*1018cm-3. The best selective donor doping concentration of the lower half of the channel layer of the quantum well HEMT device is obtained through numerical simulation, so that the two-dimensional electron gas distribution can be well optimized through the concentration, and the AiN / GaN / A1N quantum well HEMT device can be designed and manufactured according to optimized results.
Description
technical field [0001] The invention relates to semiconductor device technology, in particular to an optimized AlN / GaN / AlN quantum well HEMT device, a preparation method thereof, and a method for optimizing the two-dimensional electron gas distribution of the device. Background technique [0002] Because the III-nitride material system has many excellent characteristics such as wide bandgap, high breakdown electric field and strong polarization, the high electron mobility transistor (HEMT) based on Al(In)GaN / (In)GaN can meet high temperature, high The application requirements of high frequency and high power make it widely concerned by the scientific community. In order to improve the performance of the device, various types of III-nitride HEMT structures have been proposed, among which AlGaN / GaN HEMT is the most widely studied and most mature technology. With the continuous improvement of the material growth quality and the continuous improvement of the device manufacturin...
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IPC IPC(8): H01L29/778H01L29/10H01L21/335
CPCH01L29/105H01L29/1054H01L29/66462H01L29/7783
Inventor 王晓东胡伟达侯丽伟谢巍俞旭辉邹锶文新荣王兵兵刘素芳周德亮臧元章
Owner NO 50 RES INST OF CHINA ELECTRONICS TECH GRP