Method for growing semi-polarity GaN (gallium nitride) thick film

A semi-polar, thick film technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of difficulty in obtaining large-area uniform epitaxial films, complex processes, and high costs, and achieve low cost, simple process, and stress release. Effect

Active Publication Date: 2014-03-19
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, the traditional lateral epitaxial overgrowth has the following disadvantages: 1) In the mask preparation process, a photolithography process is required, especially for the secondary lateral epitaxial growth, multiple photolithography and epitaxy are required, and the process is complex and costly ; 2) The pattern is micron-scale, and there are still a large number of dislocations in the "window" region of the epitaxial film after growth, so it is difficult to obtain a large-area uniform epitaxial film

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  • Method for growing semi-polarity GaN (gallium nitride) thick film

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[0022] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings. It should be noted that, in the drawings or descriptions of the specification, similar or identical parts all use the same figure numbers. Implementations not shown or described in the accompanying drawings are forms known to those of ordinary skill in the art. Additionally, while illustrations of parameters including particular values ​​may be provided herein, it should be understood that the parameters need not be exactly equal to the corresponding values, but rather may approximate the corresponding values ​​within acceptable error margins or design constraints. The directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only referring to the directions of the...

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Abstract

The invention provides a method for growing a semi-polarity GaN (gallium nitride) thick film. The method comprises the following steps of step A, extending a substrate to form a semi-polarity GaN template layer; step B, preparing a TiN (titanium nitride) mask layer with a nano-grade net structure on the GaN template layer; step C, preparing a self-assembling nano-spherical mask layer on the TiN mask layer; and step D, continuing to extend the substrate, which is sequentially deposited with the semi-polarity GaN template layer, the TiN mask layer and the self-assembling nano-spherical mask layer, to form the semi-polarity GaN thick film. By adopting the method, the stress in the semi-polarity GaN thick film can be effectively released, and the heteroepitaxy of the high-quality and large-area semi-polarity GaN thick film is realized.

Description

technical field [0001] The invention relates to the technical field of semiconductor material growth, in particular to a method for growing a semipolar GaN thick film. Background technique [0002] At present, GaN-based light-emitting diodes (LEDs) are mainly grown on c-plane sapphire, because the polarization discontinuity at the heterojunction causes InGaN / GaN quantum well band bending and quantum confinement Stark effect (QCSE), which reduces the radiation Recombination efficiency, the peak wavelength of luminescence is red-shifted, and at the same time, the peak wavelength of luminescence is blue-shifted with the increase of current. When the luminous spectrum develops from blue light to green light, the luminous efficiency of GaN-based LEDs decreases sharply. Compared with c-plane GaN, semipolar plane GaN has many advantages, such as reducing or eliminating the polarization electric field, stress anisotropy in quantum wells leads to light polarization, and some semipol...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
CPCH01L33/0075
Inventor 羊建坤魏同波霍自强张勇辉胡强段瑞飞王军喜
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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