Polycrystalline silicon wafer texturization additive and application thereof

A polycrystalline silicon wafer, additive technology, applied in sustainable manufacturing/processing, crystal growth, final product manufacturing, etc., can solve the problems of poor texturing stability, poor uniformity, large texture size, etc. Sheet efficiency, reduced reflectivity, good uniformity

Active Publication Date: 2014-03-26
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are some problems in the texturing of this acid solution: the size of the suede surface is large and the uniformity is not

Method used

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  • Polycrystalline silicon wafer texturization additive and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0021] Example 1:

[0022] The texturing process using the polycrystalline silicon wafer texturing additive of the present invention adopts the following process steps:

[0023] 1) Preparation of texturing additives: using deionized water as a solvent, dissolve 0.1g sodium citrate, 0.1g polyvinyl alcohol, 2g hydrolyzed polymaleic anhydride, and 0.05g fluorocarbon surfactant in deionized water to obtain 100g Velvet additives

[0024] 2) Configure the texturing solution: Dissolve 3kg of HF aqueous solution (the mass percentage of HF in the HF solution is 49%) and 0.05kg of chromium trioxide in deionized water to obtain 10kg of acid solution; then in the acid solution Add 100g of texturing additives made in step 1) to obtain texturing liquid;

[0025] 3) Texturing: Immerse the polycrystalline silicon cell into the texturing solution for surface texturing, the texturing temperature is 10℃, and the texturing time is 1200s.

Example Embodiment

[0026] Example 2:

[0027] The texturing process using the polycrystalline silicon wafer texturing additive of the present invention adopts the following process steps:

[0028] 1) Preparation of texturing additives: using deionized water as a solvent, dissolve 2g sodium citrate, 2g polyvinyl alcohol, 20g hydrolyzed polymaleic anhydride, 0.32g fluorocarbon surfactant in deionized water to obtain 400g texturing additives ;

[0029] 2) Configure the texturing solution: Dissolve 6kg of HF aqueous solution (the mass percentage of HF in the HF solution is 49%) and 0.2kg of chromium trioxide in deionized water to obtain 10kg of acid solution; then in the acid solution Add 400g of texturing additives made in step 1) to obtain texturing liquid;

[0030] 3) Texturing: Immerse the polycrystalline silicon cell in the texturing solution for surface texturing, the texturing temperature is 30℃, and the texturing time is 300s.

Example Embodiment

[0031] Example 3:

[0032] The texturing process using the polycrystalline silicon wafer texturing additive of the present invention adopts the following process steps:

[0033] 1) Preparation of texturing additives: using deionized water as a solvent, dissolve 0.6g sodium citrate, 0.6g polyvinyl alcohol, 7g hydrolyzed polymaleic anhydride, 0.13g fluorocarbon surfactant in deionized water to obtain 200g Velvet additives

[0034] 2) Configure the texturing solution: Dissolve 4.5 kg of HF aqueous solution (the mass percentage of HF in the HF solution is 49%) and 0.125 kg of chromium trioxide in deionized water to obtain 10 kg of acid solution; Add 200g of the texturing additive made in step 1) to the solution to obtain a texturing liquid;

[0035] 3) Texturing: immerse the polycrystalline silicon cell in the texturing solution for surface texturing, the texturing temperature is 20℃, and the texturing time is 750s.

[0036] figure 1 This is the scanning electron micrograph of the textu...

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Abstract

The invention provides a polycrystalline silicon wafer chromic acid texturization additive, a polycrystalline silicon wafer chromic acid texturization solution comprising a mixed acid solution of chromic acid and hydrofluoric acid and the polycrystalline silicon wafer texturization additive, and a polycrystalline silicon wafer texturization method for texturizing the surface of a polycrystalline silicon wafer by the texturization solution. According to the polycrystalline silicon wafer texturization additive, a texturization reaction process is influenced and the reaction speeds of acid corrosion to various crystal surfaces are controlled to achieve the same corrosion speed of different crystal surfaces, so that the textured structure with good uniformity and fuzzy crystal flowers can be obtained, polycrystal flowers are effectively reduced, the reflection rate can be reduced, the current can be increased, and the efficiency can be improved.

Description

technical field [0001] The invention relates to a polycrystalline silicon wafer texturing additive and an application thereof, belonging to the technical field of polycrystalline silicon wafer texturing. Background technique [0002] In the manufacturing process of polycrystalline silicon solar cells, texturing the surface of silicon wafers is a key link. The effect of texturing directly affects the conversion efficiency and yield of the final cell. Since the polycrystalline silicon wafer is composed of crystal flowers with different crystal orientations, and the crystal orientation of each crystal flower is randomly distributed, and the crystal flower is obvious, therefore, in the general texturing process, the wet chemical etching method of acidic solution is often used to process the surface of the polycrystalline silicon wafer. velvet. The texturing process is based on the principle of isotropic corrosion of silicon by acidic solution, forming similar pit-like textures...

Claims

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Application Information

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IPC IPC(8): C30B33/10C23F1/24H01L31/18
CPCY02P70/50
Inventor 章圆圆张丽娟
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
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