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A method for preparing nanoscale spherical structures on the surface of light-emitting diodes

A light-emitting diode and nanoscale technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of inability to effectively control the shape, size and period of the roughened structure, and the inability to prepare periodic convex and concave ball structures with extraction efficiency

Active Publication Date: 2016-06-15
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] To solve the defects that the previous processing methods cannot effectively control the shape, size and period of the roughened structure, and cannot prepare periodic convex and concave spherical structures with high extraction efficiency, the purpose of the present invention is to provide a method for preparing nanoscale method of spherical structure

Method used

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  • A method for preparing nanoscale spherical structures on the surface of light-emitting diodes
  • A method for preparing nanoscale spherical structures on the surface of light-emitting diodes
  • A method for preparing nanoscale spherical structures on the surface of light-emitting diodes

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Embodiment 1

[0038] Embodiment 1: The method for preparing periodic convex ball and concave ball structures for LED luminous efficiency enhancement on the surface of LED chip or substrate provided by the present invention comprises the following steps:

[0039] Step 1) Cleaning of LED chips: Clean the LED chips to be patterned accordingly, and then bake the cleaned chips (or samples) on a hot plate, for example, on a hot plate with a temperature of 150°C 10 minutes to remove the water on the chip surface;

[0040] Step 2) Coating of photoresist: Put the chip cleaned in step 1) into the coating machine, and apply the photoresist by spin coating, select different photoresist according to the exposure type, After the photoresist is spin-coated, it is baked using a hot plate or an oven, and the temperature of the baking is determined by the type of photoresist.

[0041] Step 3) Preparation of photoresist nanopatterns: the chip coated with photoresist in step 2) is prepared for nanopatterns, f...

Embodiment 2

[0045] Embodiment 2: Utilizing the preparation method of the present invention, adopting electron beam exposure and metal coating stripping to make a metal mask, etching on the ITO layer of the formal LED to realize the convex ball structure, specifically including the following steps:

[0046] Step 1) The LED chip to be fabricated is cleaned by ultrasonic cleaning in three steps of acetone, alcohol and secondary deionized water, each step is cleaned for 5 minutes, and finally baked on a hot plate at 150° C. for 10 minutes.

[0047] Step 2) The electron beam photoresist PMMA is spin-coated on the LED chip, and the sample is baked on a hot plate at 180° C. for 1 minute after spin-coating.

[0048] Step 3) preparing a circular hole array photoresist pattern with a diameter of 400nm and a period of 750nm on the photoresist by electron beam exposure;

[0049] Step 4) putting the chip prepared in step 3) into a thermal evaporation device to grow a metal chromium film with a thickne...

Embodiment 3

[0053] In this embodiment, the photoresist pattern is prepared by nanoimprinting method, and the photoresist is used as a mask to etch the ITO layer of the formal LED to realize the concave ball structure, which specifically includes the following steps:

[0054] Step 1) The LED substrate to be fabricated is cleaned by ultrasonic cleaning in three steps of acetone, alcohol and secondary deionized water, each step is cleaned for 5 minutes, and finally baked on a hot plate at 150° C. for 10 minutes.

[0055] Step 2) Spin-coat the nano-imprint adhesive PMMA on the LED sample, and bake the sample on a hot plate at 180° C. for 1 minute after spin-coating.

[0056] Step 3) using the nanoimprint process to prepare a circular hole array pattern with a diameter of 200nm and a period of 450nm on the glue;

[0057] Step 4) Place the sample obtained in step 3) on the sample stage of the ion beam etching system, adjust the ion energy to 300eV, the beam current density to 0.8mA / cm2, the sam...

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Abstract

The invention discloses a method for preparing a nano-scale spherical structure on the surface of a light-emitting diode. The method comprises the following steps: coating photoresist on the surface of a light-emitting diode sample through spin coating; preparing a round photoresist array graph on the photoresist through a nano-scale graph to obtain a sample with a round photoresist array; by using an evaporating technology, growing a metal film on the sample with the round photoresist array, and desolventizing to obtain a sample with a metal round array; etching the sample with the round photoresist array and the sample with the metal round array through ion beam etching to obtain a sample with a spherical array structure; rinsing the sample with the spherical array structure into a photoresist stripping solution or a metal etching solution to strip the photoresist or a metal mask on the surface of the spherical array structure so as to obtain the nano-scale spherical structure. The nano-scale spherical structure has an inclined side surface with a relatively large surface area, so that total internal reflection is reduced, and light extracting efficiency of the light emitting diode is improved.

Description

technical field [0001] The present invention relates to the field of luminescence and application of light-emitting diodes, in particular to a spherical body structure of convex balls or concave balls prepared on the surface or substrate of light-emitting diode chips by etching the surface or substrate of light-emitting diodes based on ion beam etching. Therefore, a method for enhancing the light extraction efficiency of the light-emitting diode is realized. Background technique [0002] In our daily life, light emitting diodes (LEDs) have been used more and more. No matter it is used as a display, lighting, decoration, or indicator light, it is widely used in many fields in today's society due to its long life, low power consumption, and no pollution. At the same time, improving the luminous efficiency of LEDs has always been a hot spot. question. The two basic ways to improve LED luminous efficiency are to improve its internal quantum efficiency and external quantum effi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20
CPCH01L33/0062H01L33/22H01L33/32
Inventor 杨海方刘哲顾长志夏晓翔尹红星
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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