A kind of preparation method of low dielectric loss cacu3ti4o12 film

A technology of thin film and mixed liquid, applied in the direction of liquid chemical plating, metal oxide, coating, etc., can solve the problems of reducing material stability, affecting the service life of materials, changing the crystal structure of materials, etc., and achieving the reduction of dielectric loss , low cost, and the effect of increasing grain boundary resistance

Active Publication Date: 2016-06-29
NOR MEM MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, at present, it is very important to choose a suitable molding process for the doping modification of CCTO materials, and controlling the dose ratio is also the key. The doping modification process is still being improved and continuously explored.
Moreover, doping generally changes the crystal structure of the material, resulting in a decrease in the stability of the material, which directly affects the service life of the material.
Moreover, in addition to the doping method in ceramic materials, there are few reports on methods for reducing the dielectric loss of CCTO thin film materials.

Method used

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  • A kind of preparation method of low dielectric loss cacu3ti4o12 film
  • A kind of preparation method of low dielectric loss cacu3ti4o12 film
  • A kind of preparation method of low dielectric loss cacu3ti4o12 film

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Embodiment 1

[0025] Embodiment 1: A kind of low dielectric loss CaCu 3 Ti 4 o 12 The preparation method of thin film, comprises the steps:

[0026] Step 1: Prepare a precursor solution containing calcium-copper-titanium. Specifically include the following steps:

[0027] (1) At room temperature, add 2g of inorganic Ca(NO 3 ) 2 salt to obtain a mixed solution A, add 2g of water-soluble polymer polyethyleneimine (PEI) with amino groups and 2g of stabilizing complexing agent ethylenediaminetetraacetic acid (EDTA) to solution A, ultrasonic and stir until The solution was clear and transparent, and mixed solution B was obtained. Use an ultrafiltration device to filter out free ions in solution B, and evaporate and concentrate to obtain calcium-containing mixed solution X with a concentration of 103.03 mmol / L;

[0028] (2) Add 2g Cu(NO 3 ) 2 To obtain mixed solution C, add 2gPEI macromolecule and 2gEDTA to solution C and ultrasonically stir to obtain mixed solution D, filter mixed solut...

example 2

[0042] The difference between this example and Example 1 is that in step (4), after the furnace tube is pumped and ventilated 5 times, the air pressure is kept at 0.55Mpa to ensure the experimental conditions of high-pressure and high-purity oxygen atmosphere.

[0043] Below to the CaCu that embodiment 2 obtains 3 Ti4 o 12 Analysis of the structure and properties of the film:

[0044] figure 2 (b) CaCu obtained for Example 2 3 Ti 4 o 12 The X-ray diffraction (XRD) θ-2θ scanning pattern of the film, which is shown on the single crystal substrate LaAlO 3 (100) epitaxy prepared CaCu 3 Ti 4 o 12 (004) film, compared with the CaCu film prepared by polymer-assisted deposition method under normal pressure 3 Ti 4 o 12 Film samples ( figure 2 (d)), TiO appears 2 (110) phase separation.

[0045] image 3 (b) CaCu obtained for Example 2 3 Ti 4 o 12 Atomic force microscopy (AFM) image of the thin film, by image 3 (b) It can be seen that the surface of the film is com...

example 3

[0048] The difference between this embodiment and embodiment 1 is that in step (4), after the furnace tube is pumped and ventilated 5 times, the air pressure value is kept stable at 0.75Mpa to ensure the experimental conditions of high-pressure and high-purity oxygen atmosphere.

[0049] Below to the CaCu that embodiment 3 obtains 3 Ti 4 o 12 Analysis of the structure and properties of the film:

[0050] figure 2 (c) CaCu obtained in Example 3 3 Ti 4 o 12 The XRDθ-2θ scanning pattern of the film, which is shown on the single crystal substrate LaAlO 3 (100) epitaxy prepared CaCu 3 Ti 4 o 12 (004) film, compared with the CaCu film prepared by polymer-assisted deposition method under normal pressure 3 Ti 4 o 12 Film samples ( figure 2 (d)), TiO appears 2 (110) phase separation.

[0051] image 3 (c) CaCu obtained in Example 3 3 Ti 4 o 12 Atomic force microscopy (AFM) image of the thin film, by image 3 (c) It can be seen that the surface of the film is compa...

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Abstract

A preparation method of low dielectric loss CaCu3Ti4O12 thin film belongs to the technical field of dielectric material synthesis. It includes the following steps: 1) According to the ratio of calcium, copper, and titanium molar ratio of 1:3:4, prepare a precursor liquid containing calcium, copper and titanium; 2) Put the substrate into a tube furnace, and heat it up to 900 ° C for 10 hours , and naturally cooled to room temperature with the furnace; 3) Coat the precursor solution containing calcium-copper-titanium on the substrate by spin coating, and dry to obtain a film sample containing calcium-copper-titanium; 4) Apply the film sample obtained in step 3). Put it into a high-pressure furnace, adjust the gas atmosphere in the high-pressure furnace, keep the high-purity oxygen of 0.35-0.75Mpa in the high-pressure furnace, sinter the film sample at 900 ℃, and then cool down with the furnace to obtain the CaCu3Ti4O12 film. The film prepared by the method of the invention has high quality, uniform surface and greatly reduced dielectric loss.

Description

technical field [0001] The invention belongs to the technical field of dielectric material synthesis, in particular to a low dielectric loss CaCu 3 Ti 4 o 12 The method of film preparation. Background technique [0002] The development and research of high dielectric constant materials (ε>1000) has brought rapid development to the application of large-capacity capacitors and the miniaturization and miniaturization of electronic components. So far, some high dielectric constant materials have been applied in practical devices. CaCu was discovered in 2000 3 Ti 4 o 12 (CCTO) under the action of 1kHz AC electric field, the dielectric constant can reach 12,000, and in the temperature range from 100K to 400K, the dielectric constant is basically unchanged, and the low-frequency dielectric constant of its single crystal sample can even reach 10 5 . Once the high dielectric properties of CCTO were discovered, it immediately attracted widespread attention. However, the die...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C18/12H01B3/10
Inventor 林媛冯大宇吉彦达靳立彬
Owner NOR MEM MICROELECTRONICS CO LTD
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