Mis-hemt device with back field plate structure and preparation method thereof

A technology of MIS-HEMT and plate structure, which is applied in the field of MIS-HEMT devices with back field plate structure and its preparation, can solve problems such as discounting and difficulty in releasing electrons, and achieve the effect of increasing breakdown voltage and suppressing the effect of current collapse

Active Publication Date: 2016-08-31
SUZHOU NENGWU ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these problems can only solve the "current collapse" when the device works at low voltage, because at low voltage, electrons only fill the trap states on the semiconductor surface, and when the device works at high voltage, electrons will be more inclined to In order to fill the deep-level trap states in the semiconductor body at the bottom, these deep-level trap states will be more difficult to release electrons than the surface trap states. "Collapse" effect will be greatly reduced

Method used

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  • Mis-hemt device with back field plate structure and preparation method thereof
  • Mis-hemt device with back field plate structure and preparation method thereof
  • Mis-hemt device with back field plate structure and preparation method thereof

Examples

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Comparison scheme
Effect test

Embodiment 1

[0056] Example 1 see image 3 , the MIS-HEMT has AlGaN / GaN. GaN is not intentionally doped. AlGaN can be doped with n-type impurities or not. The thickness of AlGaN is about 15 to 30 nm.

[0057] This MIS-HEMT has a drain 5 and a source 6 . The drain 5 and the source 6 form an ohmic contact with AlGaN / GaN, and form a good electrical connection with the two-dimensional electron gas in the channel. The drain 5 and the source 6 are ohmic contacts formed of multilayer metals (eg Ti / Al / Ti / Au or Ti / Al / Ni / Au, etc.) through rapid high-temperature annealing.

[0058] Further, the MIS-HEMT has a gate 7, between the source 6 and the drain 5, the distance close to the source 6 is relatively short, the gate 7 is located on a dielectric layer 4, and the dielectric layer 4 is located on the AlGaN above. The dielectric layer 4 can be made of Al 2 o 3 etc., and can be deposited on AlGaN by PECVD, ALD and other technological means.

[0059] The back field plate electrode 10 is located ...

Embodiment 2

[0063] Example 2 see Image 6 , the MIS-HEMT has AlGaN / GaN. GaN is not intentionally doped. AlGaN can be doped with n-type impurities or not. The thickness of AlGaN is about 15 to 30 nm.

[0064] This MIS-HEMT has a drain 5 and a source 6 . The drain 5 and the source 6 form an ohmic contact with AlGaN / GaN, and form a good electrical connection with the two-dimensional electron gas in the channel. The drain 5 and the source 6 are ohmic contacts formed of multilayer metals (eg Ti / Al / Ti / Au or Ti / Al / Ni / Au, etc.) through rapid high-temperature annealing.

[0065] Further, the MIS-HEMT has a gate 7, between the source 6 and the drain 5, the distance close to the source 6 is relatively short, the gate 7 is located on a dielectric layer 4, and the dielectric layer 4 is located on the AlGaN above. The dielectric layer 4 can be made of Al 2 o 3 etc., and can be deposited on AlGaN by PECVD, ALD and other technological means.

[0066] The back field plate electrode 10 is located ...

Embodiment 3

[0070] Example 3 see Figure 7 , the MIS-HEMT has AlGaN / GaN. GaN is not intentionally doped. AlGaN can be doped with n-type impurities or not. The thickness of AlGaN is about 15 to 30 nm.

[0071] This MIS-HEMT has a drain 5 and a source 6 . The drain 5 and the source 6 form an ohmic contact with AlGaN / GaN, and form a good electrical connection with the two-dimensional electron gas in the channel. The drain 5 and the source 6 are ohmic contacts formed of multilayer metals (eg Ti / Al / Ti / Au or Ti / Al / Ni / Au, etc.) through rapid high-temperature annealing.

[0072] Further, the MIS-HEMT has a gate 7, between the source 6 and the drain 5, the distance close to the source 6 is relatively short, the gate 7 is located on a dielectric layer 4, and the dielectric layer 4 is located on the AlGaN above. The dielectric layer 4 can be made of Al 2 o 3 etc., and can be deposited on AlGaN by PECVD, ALD and other technological means.

[0073] The back field plate electrode 10 is located o...

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Abstract

The invention discloses an MIS-HEMT device with a back field plate structure and a preparation method thereof. The MIS-HEMT device with the back field plate structure can be manufactured through the commonly seen semiconductor device processing technology and comprises a source electrode, a drain electrode, a heterostructure and a back field plate electrode, wherein the source electrode and the drain electrode are electrically connected through two-dimensional electronic gas in the heterostructure, and the source electrode, the drain electrode and the heterostructure are of an ohmic contact mode; the heterostructure comprises a first semiconductor layer and a second semiconductor layer which are sequentially arranged in a set direction, the first semiconductor layer is arranged between the source electrode and the drain electrode, the surface of the first semiconductor layer is provided with a grid electrode, and a first insulating medium layer is arranged between the grid electrode and the first semiconductor layer to form an MIS structure; the back field plate electrode is arranged on the surface of the second semiconductor layer, which is away from the first semiconductor layer. The MIS-HEMT device with the back field plate structure can effectively increase the breakdown voltage of the device and restrain the current collapse effect to the largest extent.

Description

technical field [0001] The invention relates to a MIS-HEMT (High Electron Mobility Transistor, high electron mobility transistor) device, in particular to a MIS-HEMT device with a back field plate structure and a preparation method thereof. Background technique [0002] Group III nitride semiconductor MIS-HEMT devices, due to piezoelectric polarization and spontaneous polarization effects, will form a two-dimensional electron gas with high concentration and high mobility at the heterojunction interface, such as the AlGaN / GaN interface. In addition, the HEMT device with group III nitride semiconductor as the substrate material can obtain a high breakdown voltage and a low specific on-resistance at the same time. Due to the large band gap of the material, it has high high temperature operating performance and good radiation resistance. Therefore, it is not only suitable for high-frequency power amplifier devices, but also applicable to the field of power electronics for high-...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L29/40H01L21/335H01L21/28
CPCH01L29/402H01L29/66462H01L29/7786
Inventor 董志华蔡勇于国浩张宝顺
Owner SUZHOU NENGWU ELECTRONICS TECH
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