A kind of imitation gecko foot micro-nano hierarchical structure and its manufacturing process
A hierarchical structure and gecko imitation technology, applied in microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems of process cost and practicability, difficulty in preparing uniform films, and poor performance of silicon nanowire hierarchical structures Ideal and other issues, to achieve the effect of convenient scale manufacturing, uniform film thickness, and material saving
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Embodiment 1
[0046] A manufacturing process of a micro-nano hierarchical structure imitating gecko feet in this embodiment may specifically include steps:
[0047] S1. Use LPCVD equipment to thermally grow a layer of 300nm SiO on a clean silicon wafer 2 film;
[0048] S2, in the presence of SiO 2 Spin-coat photoresist on the surface of the silicon wafer of the first layer and carry out photolithography to prepare a circular hole array pattern, the diameter of the circular holes is 3 microns, the distance between the centers of the circles is 7 microns, and it is distributed at right angles;
[0049] S3, use buffered hydrofluoric acid solution to expose SiO 2 Etching for 2min, the pattern on the photoresist is transferred to SiO 2 layer;
[0050] S4, coating a layer of 300nm Cu film on the surface of the above sample;
[0051] S5. Ultrasound is performed in acetone or ethanol, and the photoresist on the surface and the Cu on the surface of the photoresist are removed by a stripping pro...
Embodiment 2
[0056] In this embodiment, a manufacturing process of a micro-nano hierarchical structure imitating gecko feet may specifically include steps:
[0057] S1. Use LPCVD equipment to thermally grow a layer of 600nm SiO on a clean silicon wafer 2 film;
[0058] S2, in the presence of SiO 2 Spin-coat photoresist on the surface of the first-layer silicon wafer and perform photolithography to prepare a circular hole array pattern, the diameter of the circular holes is 10 microns, the distance between the centers of the circles is 50 microns, and the distribution is hexagonal;
[0059] S3, use buffered hydrofluoric acid solution to expose SiO 2 Etching for 5min, the pattern on the photoresist is transferred to SiO 2 layer;
[0060] S4, coating a layer of 800nm Cu film on the surface of the above sample;
[0061] S5. Ultrasound is performed in acetone or ethanol, and the photoresist on the surface and the Cu on the surface of the photoresist are removed by a stripping process;
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Abstract
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