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A kind of imitation gecko foot micro-nano hierarchical structure and its manufacturing process

A hierarchical structure and gecko imitation technology, applied in microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems of process cost and practicability, difficulty in preparing uniform films, and poor performance of silicon nanowire hierarchical structures Ideal and other issues, to achieve the effect of convenient scale manufacturing, uniform film thickness, and material saving

Inactive Publication Date: 2016-01-20
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the growth of silicon nanowires needs to be evenly coated with a noble metal film, such as copper, gold, etc., and the existing metal coating methods, such as electron beam evaporation coating, magnetron sputtering coating, etc. It is difficult to prepare uniform films on micron wires, which leads to the unsatisfactory performance of the current hierarchical structure of silicon nanowires, and there are problems in process cost and practicability

Method used

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  • A kind of imitation gecko foot micro-nano hierarchical structure and its manufacturing process
  • A kind of imitation gecko foot micro-nano hierarchical structure and its manufacturing process

Examples

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Effect test

Embodiment 1

[0046] A manufacturing process of a micro-nano hierarchical structure imitating gecko feet in this embodiment may specifically include steps:

[0047] S1. Use LPCVD equipment to thermally grow a layer of 300nm SiO on a clean silicon wafer 2 film;

[0048] S2, in the presence of SiO 2 Spin-coat photoresist on the surface of the silicon wafer of the first layer and carry out photolithography to prepare a circular hole array pattern, the diameter of the circular holes is 3 microns, the distance between the centers of the circles is 7 microns, and it is distributed at right angles;

[0049] S3, use buffered hydrofluoric acid solution to expose SiO 2 Etching for 2min, the pattern on the photoresist is transferred to SiO 2 layer;

[0050] S4, coating a layer of 300nm Cu film on the surface of the above sample;

[0051] S5. Ultrasound is performed in acetone or ethanol, and the photoresist on the surface and the Cu on the surface of the photoresist are removed by a stripping pro...

Embodiment 2

[0056] In this embodiment, a manufacturing process of a micro-nano hierarchical structure imitating gecko feet may specifically include steps:

[0057] S1. Use LPCVD equipment to thermally grow a layer of 600nm SiO on a clean silicon wafer 2 film;

[0058] S2, in the presence of SiO 2 Spin-coat photoresist on the surface of the first-layer silicon wafer and perform photolithography to prepare a circular hole array pattern, the diameter of the circular holes is 10 microns, the distance between the centers of the circles is 50 microns, and the distribution is hexagonal;

[0059] S3, use buffered hydrofluoric acid solution to expose SiO 2 Etching for 5min, the pattern on the photoresist is transferred to SiO 2 layer;

[0060] S4, coating a layer of 800nm ​​Cu film on the surface of the above sample;

[0061] S5. Ultrasound is performed in acetone or ethanol, and the photoresist on the surface and the Cu on the surface of the photoresist are removed by a stripping process;

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Abstract

The invention discloses a manufacturing technology for a gecko-foot-simulated micro-nano grading structure. The manufacturing technology comprises the steps of S1, thermally growing a layer of SiO2 thin film on a clean silicon slice through an LPCVD (low pressure chemical vapor deposition) equipment; S2, spin-coating the surface of the silicon slice with the SiO2 layer with photoresist for photoetching to prepare a circular-hole array pattern; S3, etching the exposed SiO2 through a buffering hydrofluoric acid solution, and transferring the pattern on the photoresist to the SiO2 layer; S4, plating the surface of a sample with a layer of Cu film; S5, performing ultrasonic treatment on acetone or ethyl alcohol, and removing the photoresist from the surface and Cu from the surface of the photoresist through a soluble stripping-off technology; S6, growing a Si micron linear array through a CVD-VLS (chemical vapor deposition-vapor liquid solid) growth technology by taking the Cu prepared by the technology as a catalyst, SiCl4 as a silicon source and H2 as carrier gas; S7, plating the surface of a silicon wire with a layer of Cu film; S8, growing Si nano wires on the surface of the Si micron wire through the CVD-VLS growth technology by taking the Cu prepared in the S7 as a catalyst, the SiCl4 as the silicon source and the H2 as the carrier gas. The Si nano wires are distributed on the surface of the Si micron wire in the micro-nano grading structure provided by the invention, so that the gecko-foot-simulated micro-nano grading structure is obtained; a solution is supplied to design and manufacturing of a dry adhesive material.

Description

technical field [0001] The invention belongs to the field of micro-nano manufacturing, and in particular relates to a manufacturing process of a bionic micro-nano hierarchical structure. Background technique [0002] In nature, geckos can walk freely on smooth walls, and even crawl quickly on the ceiling. This phenomenon was observed by Aristotle as early as the fourth century BC. The specific adhesion characteristics of gecko feet have attracted the attention of many scholars, and research on its adhesion mechanism is continuing. In 2000, Autumn and others from the Lewis-Clark College of the United States wrote an article in Nature. They accurately measured the adhesion of a single gecko foot setae and pointed out that geckos rely on the van der Waals force between the foot setae and the surface of the object to adhere to the object. The surface reveals the secret of the gecko's easy and fast walking—the micro-nano hierarchical structure of the setae on the gecko's feet en...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B7/04
Inventor 廖广兰盛文军孙博谭先华史铁林江婷
Owner HUAZHONG UNIV OF SCI & TECH