Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for preparing Cu2Se single-crystal nanowire of exposing high-energy (III) cubic crystal structure

A cubic structure, single crystal nanotechnology, applied in the field of low-dimensional structure semiconductor optoelectronic materials, can solve the problems of slow growth, fast growth of high-energy crystal planes, and difficult to expose, and achieves low cost, simple operation, repeatability and consistency. good effect

Inactive Publication Date: 2014-05-07
SHAANXI NORMAL UNIV
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, high-reactivity surfaces are usually high-energy crystal planes, and high-energy crystal planes generally grow quickly and are not easily exposed. The crystal planes that are usually exposed in nanomaterials are those with slower growth rates.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing Cu2Se single-crystal nanowire of exposing high-energy (III) cubic crystal structure
  • Method for preparing Cu2Se single-crystal nanowire of exposing high-energy (III) cubic crystal structure
  • Method for preparing Cu2Se single-crystal nanowire of exposing high-energy (III) cubic crystal structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] According to the molar ratio of copper acetate monohydrate to Se powder and NaOH of 1:1:60, add 0.1g copper acetate monohydrate, 0.039g Se powder, and 1.2g NaOH to polytetrafluoroethylene containing 10mL glycerol and 15mL ethanol In the lining, stir evenly, then put the polytetrafluoroethylene lining in the reaction kettle, tighten the lid of the reaction kettle, put the reaction kettle in a constant temperature drying oven and heat it to 200°C, keep it warm for 12 hours, naturally cool down to room temperature, and open Reactor lid, the reaction product was washed 3 times with deionized water, then washed 3 times with ethanol, and dried in a vacuum oven at 60°C for 2 hours to prepare Cu 2 Se single crystal nanowires.

[0022] Depend on Figure 1-7 It can be seen that the prepared Cu 2 Se nanowires are single crystal wires with a cubic crystal structure and exposed high-energy (111) crystal planes, Cu 2 The Se nanowires have a diameter of 142-300 nm and a length of 6...

Embodiment 2

[0024] According to the molar ratio of copper acetate monohydrate to Se powder and NaOH of 1:1:60, add 0.1g copper acetate monohydrate, 0.039g Se powder, and 1.2g NaOH to polytetrafluoroethylene containing 5mL glycerol and 20mL ethanol In the lining, stir evenly, then put the polytetrafluoroethylene lining in the reaction kettle, tighten the lid of the reaction kettle, put the reaction kettle in a constant temperature drying oven and heat it to 200°C, keep it warm for 12 hours, naturally cool down to room temperature, and open Reactor lid, the reaction product was washed 3 times with deionized water, then washed 3 times with ethanol, and dried in a vacuum oven at 60°C for 2 hours to prepare Cu 2 Se single crystal nanowires. Depend on Figure 8 It can be seen that the prepared Cu 2 The Se nanowires have a diameter of 178 nm to 1.1 μm and a length of 5.4 to 20 μm.

Embodiment 3

[0026] According to the molar ratio of copper acetate monohydrate, Se powder, and NaOH of 1:1:60, add 0.1g copper acetate monohydrate, 0.039g Se powder, and 1.2g NaOH into the polytetrafluoroethylene liner filled with 25mL ethanol, Stir evenly, then put the polytetrafluoroethylene lining in the reactor, tighten the lid of the reactor, put the reactor into a constant temperature drying oven and heat it to 200°C, keep it warm for 12 hours, cool down to normal temperature naturally, open the lid of the reactor, The reaction product was washed 3 times with deionized water, then washed 3 times with ethanol, and dried in a vacuum oven at 60 °C for 2 hours to prepare Cu 2 Se single crystal nanowires. Depend on Figure 9 It can be seen that the prepared Cu 2 The Se nanowires have a diameter of 180 nm-1.0 μm and a length of 12-15 μm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Lengthaaaaaaaaaa
Diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a Cu2Se single-crystal nanowire of exposing a high-energy (III) cubic crystal structure. The cubic-phase Cu2Se single-crystal nanowire which exposes a high-energy (III) crystal surface and has large aspect ratio is prepared by adopting a simple solvothermal method; the Cu2Se nanowire grows along the direction of [-202], the diameter of the nanowrie is 142nm to 1.1 microns, and the length is 5.4-102 microns. The method is simple in operation, low in cost, and good in repeatability and consistency; the prepared Cu2Se single-crystal nanowire of exposing the high-energy (III) cubic crystal structure can be expected to reflect the enhanced photoelectric properties in application of photocatalytic and solar cells, a superionic conductor, a lithium ion battery, a super capacitor and the like.

Description

technical field [0001] The invention belongs to the technical field of low-dimensional structure semiconductor optoelectronic materials, in particular to Cu 2 The preparation method of Se single crystal nanowire, and this Cu 2 Uses of Se single crystal nanowires. Background technique [0002] It is well known that the physicochemical properties of semiconductor nanomaterials are very strongly dependent on size and morphology. Recently, it has been found that the photocatalytic and chemical sensing properties of semiconductor nanomaterials are closely related to their exposed crystal faces. Therefore, the preparation of semiconductor nanomaterials with highly reactive surfaces has very important scientific significance and great application value [Adv.Mater.2012 , 24, 229-251]. However, high-reactivity planes are usually high-energy crystal planes, and high-energy crystal planes generally grow quickly and are not easily exposed. The crystal planes that are usually exposed ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/46C30B29/62C30B7/14B82Y40/00
Inventor 杨合情刘彬赵桦
Owner SHAANXI NORMAL UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com