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A kind of preparation method of itio target material

A target and compression molding technology, which is applied in the field of high-performance ITiO target preparation, can solve the problems of infrared transmittance and thermal resistance limitations, high film cost, and complex mass production.

Active Publication Date: 2015-09-09
洛阳晶联光电材料有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Commonly used in dye-sensitized solar cells (DSSC) transparent conductive electrodes are FTO (tin oxide doped with fluorine) and ITO (indium oxide doped tin) films, etc. These films are costly and complex for mass production, while in the infrared region The transmittance and thermal resistance have great limitations

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Embodiment 1: TiO 2 (Titanium oxide) nanopowder and In 2 o 3 (Indium oxide) nano-powder is put into a ball mill and mixed evenly by ball milling to obtain ITiO (indium titanium oxide) powder, and TiO in ITiO powder 2 The content is 2wt%, and then add 2% of ITiO powder mass binder PVA (polyvinyl alcohol) for spray granulation; put the indium titanium oxide granulation powder into the mold and press it with 60MPa in the hydraulic press, and the first The biscuit formed at one time is then subjected to secondary molding in a cold isostatic press at 250 MPa. After the cold isostatic pressing is completed, the pressure relief operation is performed. During the pressure relief, the pressure relief is carried out slowly at 5 MPa / min, and finally to normal pressure , and take out the shaped green body to obtain a high-density (relative density 55%-60%) ITiO green body. Then put the pressed green body in an oxygen atmospheric pressure sintering furnace for sintering. The sint...

Embodiment 2

[0016] Embodiment 2: TiO 2 (Titanium oxide) nanopowder and In 2 o 3 (Indium oxide) nano-powder is put into a ball mill and mixed evenly by ball milling to obtain ITiO (indium titanium oxide) powder, and TiO in ITiO powder 2 The content is 4wt%, and then add the binder PVA of 3% of the ITiO powder mass to carry out spray granulation; put the indium titanium oxide granulated powder into the mold and press it with 80MPa in the hydraulic press, and the first formed plain Then use 210MPa to carry out secondary molding in a cold isostatic press. After the cold isostatic pressing is completed, perform a pressure relief operation. During the pressure relief, the pressure is slowly relieved at 7MPa / min, and finally to normal pressure, and it is taken out and formed. The green body of high density (relative density 55%-60%) of ITiO green body is obtained. Then put the pressed biscuit in an oxygen atmospheric pressure sintering furnace for sintering. The sintering condition is to heat...

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PUM

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Abstract

The invention relates to a preparation method of a target, in particular to a preparation method of a high-performance ITiO (Indium Titanium Oxide) target. The method comprises the following steps of: (1) uniformly ball-milling and mixing TiO2 nano-powder, and In2O3 nano-powder to form ITiO powder, then adding an adhesive agent PVA (Polyvinyl Acetate) accounting for 1-5% of the mass of the ITiO powder, (2) loading the ITiO powder into a mold for compression molding at 40-80MPa, performing secondary moulding on a biscuit moulded for the first time at 200-300 MPa, releasing pressure at 4-8MPa / min to the ordinary pressure, then taking out a moulded biscuit, and (3) putting the biscuit in a sintering furnace for sintering: heating to 1450-1550 DEG C at a heating rate of less than 1 DEG C / min, holding, and sintering for 6-12h, then cooling to 950-1050 DEG C at a cooling rate of 0.75-1 DEG C / min, then naturally cooling, and obtaining the ITiO target, wherein a TiO2 content of the ITiO powder is 0.5-5wt%. The method can prepare the high-performance ITiO target (high density, relative density greater than 98%, good conductivity, and target resistivity less than 4.0*10<-4>omega*cm), and fills in the blank of producing and fabricating the high-performance ITiO target domestically.

Description

technical field [0001] The invention relates to a method for preparing a target, in particular to a method for preparing a high-performance ITiO target. Background technique [0002] Commonly used in dye-sensitized solar cells (DSSC) transparent conductive electrodes are FTO (fluorine-doped tin oxide) and ITO (indium oxide-doped tin) films, etc. These films are costly and complex for mass production. The transmittance and thermal resistance have great limitations. Therefore, if a thin film with low cost, simple mass production, and high transmittance and high conductivity in the infrared region can be developed to replace the above-mentioned thin film, it will have a very wide application prospect. Contents of the invention [0003] The technical problem to be solved by the present invention is: to provide a reliable preparation method of ITiO target material, which can prepare high-performance ITiO target material (relative density > 98%, good conductivity, target res...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/01C04B35/622
Inventor 黄誓成何建进陆映东
Owner 洛阳晶联光电材料有限责任公司