Supercharge Your Innovation With Domain-Expert AI Agents!

Composition for forming an antireflection film containing a reaction product of an isocyanuric acid compound and a benzoic acid compound

A technology of anti-reflection film and compound, which is applied in the field of composition forming the anti-reflection film, and can solve problems such as bad effects of processing procedures

Active Publication Date: 2017-10-20
NISSAN CHEM IND LTD
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This is because if the photoresist pattern has a large curl shape, it will have a bad influence on the subsequent processing steps

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Composition for forming an antireflection film containing a reaction product of an isocyanuric acid compound and a benzoic acid compound
  • Composition for forming an antireflection film containing a reaction product of an isocyanuric acid compound and a benzoic acid compound
  • Composition for forming an antireflection film containing a reaction product of an isocyanuric acid compound and a benzoic acid compound

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0095] 175 g of tris(2,3-epoxypropyl)isocyanuric acid (manufactured by Nissan Chemical Industry Co., Ltd., trade name TEPIC), 628 g of 3,5-diiodo-2-hydroxybenzoic acid, and benzyl tris After dissolving 9.2 g of ethylammonium chloride in 3,250 g of propylene glycol monomethyl ether, it was reacted at 130° C. for 24 hours to obtain a solution containing a reaction product. In addition, it is considered that the reaction product contains an isocyanuric acid compound obtained by converting a 2,3-epoxypropyl group into a group of formula (5) and an oligomer (or polymer) having a structure of formula (6). ).

[0096]

Synthetic example 2

[0098] Dissolve 457 g of tris(2,3-epoxypropyl)isocyanuric acid (manufactured by Nissan Chemical Industries, Ltd., trade name TEPIC), 407 g of 4-hydroxybenzoic acid, and 136 g of 4-cyanobenzoic acid in propylene glycol monomethyl 1000 g of base ether, and reacted at 130° C. for 24 hours to obtain a solution containing a reaction product. In addition, it is considered that the reaction product contains an isocyanuric acid compound in which a 2,3-glycidyl group is converted into a group of formula (7) or formula (8).

[0099]

Embodiment 1

[0101] 9.6 g of propylene glycol monomethyl ether, 65.8 g of ethyl lactate, and 0.11 g of triphenylhexafluorosulfonium antimonate as a photoacid generator were added to 23.3 g of a solution containing 4.7 g of the reaction product obtained in Synthesis Example 1. , 1.2 g of tetramethoxymethyl glycoluril (manufactured by Japan Cytech Indastres Co., Ltd. (former Mitsui Cytech Co., Ltd.), trade name Paudaring 1174) and 0.06 g of pyridinium p-toluenesulfonate were used to form a solution. Then, filtration was performed using a polyethylene microfilter with a pore diameter of 0.10 μm, and then a polyethylene microfilter with a pore diameter of 0.05 μm was used to prepare a solution of an antireflection film-forming composition.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
refractive indexaaaaaaaaaa
refractive indexaaaaaaaaaa
refractive indexaaaaaaaaaa
Login to View More

Abstract

The invention aims at providing an anti-reflection film which is high in anti-reflection effect, is not mixed with a photoresist, can be used for forming a photoresist graph without a large turned edge shape at the bottom, and can be used in the photoetching procedure using irradiation light of ArF excimer laser, F2 excimer laser and the like; the invention also provides a composition for forming the anti-reflection film. In order to solve the problems, the invention provides the composition for forming the anti-reflection film, namely, the composition for forming the anti-reflection film contains the following reaction product which is obtained by the reaction between isocyanuric acid compound with two or three 2, 3-glycidyls and benzoic acid component.

Description

[0001] This application is a branch of a patent application with a filing date of September 27, 2005, an application number of 200580051639.1, and an invention title of "A composition for forming an anti-reflection film containing a reaction product of an isocyanuric acid compound and a benzoic acid compound". case application. technical field [0002] The present invention relates to a composition for forming an antireflection film. Specifically, it relates to an anti-reflection film used in order to reduce the reflection of exposure light from a semiconductor substrate to a photoresist layer coated on a semiconductor substrate in a photolithography process for manufacturing a semiconductor device, and an antireflection film for forming the same. Composition for antireflection film. More specifically, it relates to an antireflection film used in a photolithography process for manufacturing a semiconductor device using exposure irradiation light with a wavelength of 248 nm, 1...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/11G02B1/04
Inventor 岸冈高广坂本力丸丸山大辅
Owner NISSAN CHEM IND LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com