Method for passivating films shielded by etching adhesive through fluorine-based gas

A gas and thin film technology, applied in the field of thin films masked by fluorine-based gas passivation etchant, can solve problems such as difficult to completely remove, pollution, and corrosion of laminated structure materials, and achieve good anisotropy and easy removal Effect

Active Publication Date: 2014-07-02
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

[0004] However, the polymers generated during the etching process are difficult to remove in subsequent processes, such as acetone immersion or oxygen plasma etching, which are not difficult to remove. If UV

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  • Method for passivating films shielded by etching adhesive through fluorine-based gas
  • Method for passivating films shielded by etching adhesive through fluorine-based gas
  • Method for passivating films shielded by etching adhesive through fluorine-based gas

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Embodiment Construction

[0032] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0033] The present invention utilizes the advantages of high-temperature etching, which is mainly reflected in the fact that the carbon element in the reactive ion etching gas participates in the reaction to form a polymer, which is relatively volatile when the temperature is about 100° C.; There is cooling, but the temperature will still rise during the long-term etching process. Even if the photoresist mask is thicker, the solvent in the glue can be fully baked, and a harder high-temperature etching-resistant glue mask can be obtained.

[0034]In addition, when the pressure and gas flow rate of the etching chamber are constant, the temperature rise will cause the equipment control system to increase the vacuum pumping ra...

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Abstract

The invention discloses a method for passivating films shielded by etching adhesive through fluorine-based gas. The method comprises the steps that a lamination of a material to be etched is coated with photoresist spirally and photo-etched, an obtained adhesive stand with a vertical side wall is used as an etching mask, and preparation of a sample to be etched is achieved; the sample to be etched is subjected to normal-temperature etching; the sample to be etched after normal-temperature etching is subjected to high-temperature normal-position over etching to remove polymers on the surface of the sample to be etched. By means of the method, the advantages that normal-temperature etching is good in anisotropy, etching parameters are convenient to control, high-temperature etching can conveniently remove the polymers and other residue are utilized, so that the vertical side wall without residual polymer is obtained, no more process is needed, and the method is compatible with a traditional silicon-based semiconductor process.

Description

technical field [0001] The invention relates to a method for passivating a thin film masked by an etchant with a fluorine-based gas, utilizing CHF 3 The polymer produced when etching the photoresist can protect the etched surface, and at the same time control the chamber pressure and flow device to distribute the polymer to all surfaces exposed to the etching gas, and distribute on the surface in the same direction Consistent, so that the etching rate in each direction is consistent, and a flat upper surface and vertical film sidewalls are obtained. Background technique [0002] Reactive ion etching is the most widely used dry etching technology at present. It includes the advantages of physical etching, mainly ion sputtering etching, and plasma chemical etching. Glow is generated by applying radio frequency voltage in the reaction chamber. Discharge, the process gas passing into the cavity is broken down and ionized, generating plasma containing free electrons, positive an...

Claims

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Application Information

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IPC IPC(8): H01L21/027G03F1/80
CPCG03F1/80H01L21/0274
Inventor 赵威刘洪刚孙兵常虎东
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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