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A kind of preparation method of cdsextey quantum dot photoelectric thin film

A technology of photoelectric thin films and quantum dots, applied in chemical instruments and methods, circuits, electrical components, etc., can solve the problems of sensitivity, difficulty in storage, and large open-circuit photovoltage.

Active Publication Date: 2016-03-02
常熟市华强绝缘材料有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Aluminum telluride is very sensitive to humidity and is not easy to store. When it is used to synthesize water-soluble CdTe quantum dots, it is easy to produce highly toxic H 2 Te gas, which is harmful to the experimental operators and the surrounding environment
Doping other elements on the basis of synthesizing CdTe has also been reported, but the above problems cannot be avoided, while the preparation of CdSe by electrochemical co-deposition x Te y The research on quantum dot thin films has not been reported yet. The preparation process is simple, the conditions are easy to control, no pollution is generated, and CdSe x Te y The open-circuit photovoltage of the quantum dot film is also relatively large, which is a good photoelectric material and is expected to be used as a solar photovoltaic cell material.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] (1) Weigh 1.2953GCD (NO 3 ) 2 · 4H 2 O in the cup, add 0.8069g of citric acid as complexing agent, and then add water to a 10ml complexing solution, which is recorded as solution A.

[0012] (2) Called 0.1197gteo 2 In the cup, add 1mol / LNAOH solution until Teo 2 All dissolve, then add 0.1297GNA 2 SEO 3 And water, with a 10ml aquatic solution, stir well, remember to be solution B.

[0013] (3) Mixing the steps (1) obtained solution A and steps (2) Mixing the solution B of the solution B to get the solution C;The amount of substances is 0.75 mmol, and the Moore of CD, SE, TE controls 5.6: 1: 1.

[0014] (4) Put the steps (3) the income solution C in a 45 ℃ water bath, use ITO conductive glass as the cathode, platinum tablets as anode, and stir at 2.5V DC voltage and magnetic force for 20 minutes, to obtain CDSE x TE y Quantum dot optical film; the open air voltage of the simulation of the solar light reaches 0.2092V.CDSE x TE y X = 0.53, y = 0.47 in the quantum dot.

Embodiment 2

[0016] (1) Called 0.8634GCD (NO 3 ) 2 · 4H 2 O in the cup, add 0.5378g of citric acid as complexing agent, and then add water to with a 10ml complexing solution, which is recorded as solution A.

[0017] (2) Called 0.0798gteo 2 In the cup, add 1mol / LNAOH solution until Teo 2 All dissolved, then add 0.0864GNA 2 SEO 3 And water, with a 10ml aquatic solution, stir well, remember to be solution B.

[0018] (3) Mixing the steps (1) obtained solution A and steps (2) Mixing the solution B of the solution B to get the solution C;The amount of substances is 0.5 mmol, and the Moore ratio of CD, SE, TE controls 5.6: 1: 1.

[0019] (4) Put the step (3) solution C in a 55 ℃ water bath, use ITO conductive glass as the cathode, platinum tablet as anode, and sedse it for 40 minutes at 3.5V DC voltage and magnetic force. x TE y Quantum dot optical film; the open air voltage of the simulation of the solar light reaches 0.3235V.CDSE x TE y X = 0.63, y = 0.37 in the quantum dot.

Embodiment 3

[0021] (1) Call 0.4317GCD (NO 3 ) 2 · 4H 2 O in the cup, add 0.2689g of citric acid as complexing agent, and then add water to a 10ml complexing solution, which is recorded as solution A.

[0022] (2) Called 0.0399Gteo 2 In the cup, add 1mol / LNAOH solution until Teo 2 All dissolved, then add 0.0432GNA 2 SEO 3 And water, with a 10ml aquatic solution, stir well, remember to be solution B.

[0023] (3) Mixing the steps (1) obtained solution A and steps (2) Mixing the solution B of the solution B to get the solution C;The amount of substances is 0.25mmol, and the Moore of CD, SE, TE controls 5.6: 1: 1.

[0024] (4) Put the steps (3) the income solution C in a 50 ° C water bath, use ITO conductive glass as the cathode, platinum tablet as anode, and sedse it for 30 minutes at 3V DC voltage and magnetic force. x TE y Quantum dot optical film; the open air voltage of the simulation of the solar light reaches 0.4641V.CDSE x TE y X = 0.79, y = 0.21 in the quantum dot.

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Abstract

The invention discloses a preparation method of a CdSexTey quantum dot photoelectric thin film. (1) Weigh 0.4317~1.2953g? Add 0.2689-0.8069g citric acid as a complexing agent to Cd(NO3)2·4H2O in a beaker, then add water to make 10mL complexed aqueous solution A; (2) Weigh 0.0399-0.1197g? Put TeO2 in a beaker, drop 1mol / L? NaOH solution, until TeO2 is completely dissolved, then add 0.0432 ~ 0.1297g? Na2SeO3 and water, make 10mL solution B; (3) Mix complex aqueous solution A and solution B to get solution C; (4) Put solution C in a 45-55°C water bath, use ITO conductive glass as the cathode, platinum The sheet is an anode, and is electrodeposited for 20 to 40 minutes at a direct current voltage of 2.5 to 3.5 V and magnetic stirring. The most notable feature of the present invention is that the CdSexTey quantum dot photoelectric thin film is obtained by the electrochemical co-deposition method, the preparation process is simple and efficient, pollution-free and low cost, and the obtained CdSexTey quantum dot photoelectric thin film has a relatively high photovoltage value.

Description

Technical field [0001] The present invention involves a cdse x TE y Preparation method of quantum dot optical film. Background technique [0002] Solar energy is considered one of the most large -scale development potential in the 21st century.Solar batteries are devices that use solar energy to directly convert light energy into electrical energy, which has been widely used.Quantum dot solar cells are one of the latest and most cutting -end solar batteries. Its scale is between macro solids and micro -atoms and molecules. Quantum dot solar cells will show huge development prospects in future solar conversion.Among them, the exhaustive layer of heterogeneous knot solar cells mainly rely on the quantum dot of the P-type and the N-type high migration semiconductor material to form a P-N knot to provide internal construction electric fields. It can quickly separate electronic cave pairs.structure.P -type CDTE is one of the quantum points with more research. CDTE quantum dots can be ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18C01B19/00C03C17/34B82Y30/00
CPCB82Y30/00H01L21/02425H01L21/0256H01L21/02562H01L21/02601H01L21/02628Y02P70/50
Inventor 钟福新王伟王丹宇王苏宁黎燕莫德清朱义年
Owner 常熟市华强绝缘材料有限责任公司