A kind of ITO roughened Gan-based LED chip and preparation method thereof
A technology of LED chips and LED epitaxial wafers, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high R&D costs, expensive preparation of embossed mother boards, unsuitable for mass production of production lines, etc., and achieve high light output power and low cost. cheap effect
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Embodiment 1
[0026] For GaN-based LED epitaxial wafers, its structure is as follows figure 1 Said, including substrate 1, n-type semiconductor material 2, multi-quantum well light-emitting layer 3 and p-type semiconductor material 4, using electron beam evaporation to deposit ITO, the oxygen flow rate during the evaporation process is 3.5sccm, the temperature is 250°C, and the thickness of ITO is 230nm . After the evaporation is completed, the surface of ITO is flat, and the schematic diagram of the cross-section of the substrate is as follows: figure 1 shown. Then the substrate was placed in 20wt% dilute hydrochloric acid solution for wet etching without mask. The etching solution was heated in a water bath at a temperature of 25°C. After etching for 10 seconds, randomly distributed nano-sized microstructures appeared on the surface of the ITO. A schematic diagram of the cross-section of the figure 2 shown. After cleaning the substrate with deionized water, bake it in an oven at 120°...
Embodiment 2
[0028] Electron beam evaporation was used to deposit ITO. During the evaporation process, the flow rate of oxygen was 20 sccm, the temperature was 300° C., and the thickness of ITO was 1000 nm. After the evaporation is completed, the surface of ITO is flat, and the schematic diagram of the cross-section of the substrate is as follows: figure 1 shown. Then the substrate was placed in 5wt% dilute hydrochloric acid solution for wet etching without mask. The etching solution was heated in a water bath at a temperature of 70°C. After 20 minutes of etching, randomly distributed nano-sized microstructures appeared on the surface of the ITO. A schematic diagram of the cross-section of the figure 2 shown. After cleaning the substrate with deionized water, bake it in an oven at 200° C. for 10 minutes. Next, a layer of hexamethyldisilazane was spin-coated on the surface of the substrate as an adhesion promoter, and baked on a hot plate at 100° C. for 20 sec. A layer of photoresist w...
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