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Infrared detector and manufacturing method thereof

An infrared detector and tablet technology, which is applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as low working temperature of detectors, and achieve low manufacturing cost, reasonable structure and good detection effect. Effect

Inactive Publication Date: 2014-07-16
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The detection rate of the same semiconductor photon-type infrared detector at room temperature is significantly lower than that at low temperature. In order to maintain the normal operation of the semiconductor photon-type detector, it is often necessary to place the detector in a low-temperature container (Dewar bottle) , or use a micro cooler to make the detector reach a lower working temperature

Method used

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  • Infrared detector and manufacturing method thereof
  • Infrared detector and manufacturing method thereof
  • Infrared detector and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0036] The concrete steps of preparation are:

[0037] In step 1, vanadium pentoxide, oxalic acid dihydrate and deionized water are mixed according to a weight ratio of 1.8:1:2000, and stirred at 35° C. for 12 hours to obtain a vanadyl oxalate precursor solution. Then the vanadyl oxalate precursor solution was placed in a closed state, and reacted at 200° C. for 6 days to obtain a reaction solution containing precipitates.

[0038] In step 2, the reaction solution containing the precipitate is first subjected to solid-liquid separation, washing and drying; wherein, the solid-liquid separation treatment is centrifugation, the speed of centrifugation is 6000r / min, and the time is 8min, and the washing treatment is to use the Ionized water and ethanol are used to alternately wash the separated solid matter twice. The separation of the solid matter during cleaning is centrifugation, and the drying process is to dry the cleaned solid matter at 60°C to obtain an approximate figure ...

Embodiment 2

[0041] The concrete steps of preparation are:

[0042] In step 1, vanadium pentoxide, oxalic acid dihydrate and deionized water are mixed according to a weight ratio of 1.9:1:1500, and stirred at 38°C for 10 hours to obtain a vanadyl oxalate precursor solution. Then the vanadyl oxalate precursor solution was placed in a closed state, and reacted at 210° C. for 4.5 days to obtain a reaction solution containing precipitates.

[0043] In step 2, the reaction solution containing the precipitate is first subjected to solid-liquid separation, washing and drying; wherein, the solid-liquid separation treatment is centrifugation, the speed of centrifugation is 7000r / min, and the time is 7min. Ionized water and ethanol are used to alternately wash the separated solid matter three times. The separation of the solid matter during cleaning is centrifugation, and the drying process is to dry the cleaned solid matter at 65 ° C to obtain a similar figure 1 as shown in a, and as figure 2 Ph...

Embodiment 3

[0046] The concrete steps of preparation are:

[0047] In step 1, vanadium pentoxide, oxalic acid dihydrate and deionized water are mixed according to a weight ratio of 2:1:1000, and stirred at 40° C. for 8 hours to obtain a vanadyl oxalate precursor solution. Then, the vanadyl oxalate precursor solution was placed in a closed state, and reacted at 220° C. for 3 days to obtain a reaction solution containing precipitates.

[0048] In step 2, the reaction solution containing the precipitate is first subjected to solid-liquid separation, washing and drying; wherein, the solid-liquid separation treatment is centrifugation, the speed of centrifugation is 8000r / min, and the time is 6min, and the washing treatment is to use the Ionized water and ethanol are used to alternately wash the separated solid matter twice. During washing, the solid matter is separated by centrifugation, and the drying process is to dry the cleaned solid matter at 70°C to obtain the following: figure 1 as sh...

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Abstract

The invention discloses an infrared detector and a manufacturing method of the infrared detector. According to the detector, a pressed piece composed of M-phase vanadium dioxide powder is arranged on an insulating substrate, the surface of the pressed piece is covered by a pair of electrodes, and the distance between the electrodes is 0.8 mm-1.2 mm. The density of the M-phase vanadium dioxide powder is 3.8 g / cm3-4.8 g / cm3, the grain size of the powder is 0.5 micrometer-2.5 micrometers, and the thickness of the pressed piece is 100 micrometers-400 micrometers. The manufacturing method includes the steps that vanadium pentoxide, oxalic acid and deionized water are mixed, stirred and then placed in a closed state for reaction to obtain reaction solution containing sediment; then solid-liquid separation, washing and drying are performed on the reaction solution containing the sediment, and then the reaction solution is placed in inert atmosphere for annealing to obtain the M-phase vanadium dioxide powder; finally, the M-phase vanadium dioxide powder is firstly placed in a die to form the piece in a pressed mode, then masking treatment and ion sputtering metal spraying treatment are sequentially performed on the surface of the pressed piece, the pressed piece is placed on the insulating substrate, a mask is removed, and then the objective product is manufactured. The infrared detector can be widely applied to the field of infrared detection.

Description

technical field [0001] The invention relates to a detector and a preparation method, in particular to an infrared detector and a preparation method thereof. Background technique [0002] Infrared detection allows people to detect and track targets in nighttime environments that are difficult to observe with the naked eye. With the development of technology and market demand, more and more fields such as security, transportation, and real-time monitoring of instrument operation need infrared detection technology. . At present, most commonly used infrared detectors are photon-type infrared detectors, also known as photoelectric detectors, which are radiation detectors made by using the external photoelectric effect or the internal photoelectric effect. The electrons in the detector directly absorb the energy of photons. Change the state of motion to generate electrical signals. Photon detectors made by using the external photoelectric effect are vacuum electronic devices, su...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/09H01L31/18
CPCH01L31/032H01L31/09H01L31/1864Y02P70/50
Inventor 张阳费广涛霍鹏程付文标欧阳浩淼高旭东
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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