Preparation method for low-dielectric-constant fine silicon powder

A low dielectric constant and dielectric constant technology, applied in the direction of silicon oxide, silicon dioxide, etc., can solve the problems of insufficient pressure resistance of powder, easy breakage, and poor electrical performance of downstream products.

Inactive Publication Date: 2014-07-30
周雨
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, in the hollow spherical silica powder produced by the wet method in the prior art, because the raw materials used contain higher concentrations of potassium and sodium ions, these ions remain in the powder and are brought into the downstream products, resulting in the loss of downstream products. The electrical performance deteriorates. At the same time, the hollow spherical powder has insufficient compressive capacity. It is very easy to break during the production process of copper clad board or chip packaging, which will lead to an increase in the dielectric constant of the copper clad board. Therefore, It is necessary to provide an inorganic powder with a stable low dielectric constant to improve the performance of copper clad laminates

Method used

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  • Preparation method for low-dielectric-constant fine silicon powder
  • Preparation method for low-dielectric-constant fine silicon powder

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preparation example Construction

[0036] The specific steps of the preparation method of the present invention are as follows: the maximum particle diameter D 100 Spherical or angular (flaky) pure silica or silica powder with a certain proportion of 100 A new powder that is continuously adjustable below 5-200 microns. This powder has the advantages of light weight, self-assembly, low hardness and low dielectric constant. Its Moss hardness is between 2-3 and the dielectric constant is less than 3 (about 2.5), which significantly improves the hardness and processing performance of copper-clad aluminum laminates.

[0037] Among them, the maximum particle size D 100 Commercially available silicon dioxide or silicon dioxide containing a certain proportion of silicon dioxide <3 microns can be used.

[0038] The dehydration method adopts one selected from press filtration, centrifugation, sedimentation or heating. Among them, centrifugal dehydration is the best. While achieving solid-liquid separation, the gap betw...

Embodiment 1

[0043] The maximum particle size D 100 The silicon micropowder powder composed of 3 micron spherical silica is completely wetted with water with a weight ratio of 30%, and after homogenizing for several hours, it is centrifugally dehydrated in a centrifuge and kept at 140 degrees. 6 hours, and calcined at 600 degrees for 26 hours to form the largest particle size D 100 The new powder is continuously adjustable below 5-200 microns, wherein the dielectric constant of the new powder is about 2.5, which is more than 30% lower than that of the raw powder.

Embodiment 2

[0045] The maximum particle size D 100 The silicon micropowder powder composed of 0.4 micron spherical silica is completely wetted with water with a weight ratio of 40%, and homogenized for several hours, then centrifugally dehydrated in a centrifuge and kept at 140 degrees. 6 hours, and calcined at a temperature of 1250 degrees for 10 hours to form the largest particle size D 100 A new powder that is continuously adjustable below 5-200 microns.

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Abstract

The invention discloses a preparation method for a low-dielectric-constant fine silicon powder. The method comprises: employing a silicon powder with a certain ratio of spherical or angular pure silica or silica and with a certain scope of maximum particle size D100, performing wetting, dewatering, drying and calcining, and forming a new powder through self assembly after repulverizing of particles and granularity adjusting. The maximum particle size D100 of the new powder is 5-200 mu m, the particles of the new powder is formed by mutually supported or bonded particles of the original powder, and also a large amount of cavities are formed in particles during self assembly such as supporting or bonding, so that the dielectric constant of the new powder is reduced.

Description

technical field [0001] The invention relates to a method for preparing silicon micropowder, in particular to a method for preparing silicon micropowder with low dielectric constant. Background technique [0002] Microsilica powder is a micropowder processed from natural quartz or fused silica by crushing, dry or wet grinding, and is a non-toxic and pollution-free inorganic non-metallic material. Due to its good temperature resistance, acid and alkali corrosion resistance, chemical stability, high insulation and low expansion properties, silica powder is widely used in chemical industry, electronics, integrated circuits, rubber and other fields. As the basic material for preparing integrated circuit PCB, copper clad laminate has a huge impact on the performance of integrated circuits. [0003] At present, by adding inorganic powder to the glue for copper clad laminates, the mechanical, dimensional and electrical properties of the cured resin can be improved. The addition of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/12
Inventor 郭强俊周雨
Owner 周雨
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