A kind of photodetector preparation method and prepared wide-angle photodetector
A photodetector, wide-angle technology, used in circuits, electrical components, semiconductor devices, etc., can solve the problems of low scanning efficiency and increase the difficulty of implementation, and achieve the effect of reducing sensitivity
Inactive Publication Date: 2016-06-15
SUZHOU NORTHEAGLE PHOTONIC SCI TEC
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Problems solved by technology
[0016] It is precisely because the current anti-reflection coating design requires the incident light to be vertically incident. In the actual detection system, an additional detector rotation control system is required. Due to the speed limit of the rotation control system, the scanning efficiency is too low. Therefore, a further proposal with photoelectric detection The focusing optical system with the detector and the focal plane array are formed by adding detectors to realize the detection of signals in all directions, but the additional system not only increases the volume of the entire photodetector module, but also makes it more difficult to realize
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[0040] The invention discloses a wide-angle photodetector, the structure of which is as follows image 3 As shown, it includes: a passivation layer 101 , a reconstructed photosensitive surface 102 and a photodetection structure 103 from top to bottom. The photodetection structure 103 is used to generate the photoelectric effect, which is a prior art and will not be repeated here. combine Figure 4 As shown, the upper surface of the reconstructed photosensitive surface 102 is an uneven surface, so that the part of the reflected light generated after the oblique incident light contacts the reconstructed photosensitive surface 102 enters the photodetection structure again as oblique incident light In 103 , the passivation layer 101 completely covers the reconstructed photosensitive surface 102 .
[0041] Specifically, when the incident light is incident on the reconstructed photosensitive surface 102 of the photodetection structure 103 at a certain angle, since the actual incid...
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The invention discloses a photoelectric detector manufacturing method. The photoelectric detector manufacturing method comprises the following steps that a p-GaN layer is grown in a photosensitive surface of the structure of a photoelectric detector and serves as a transition layer; a p-GaN layer is grown on the transition layer and serves as a crystal seed layer of a reconstructed structure; after the crystal seed layer is grown, rapid heating is carried out, a p-GaN layer is grown, and a reconstructed photosensitive surface is formed. The photoelectric detector manufacturing method has the advantages of being efficient and reliable, limitation of the angle of incidence of the Fresnel reflection coefficient is broken through the reconstruction of the surface of the photoelectric detector, the sensitivity of incident wavelength is reduced, an extra system is not needed, and the wide-angle detection can be achieved only through one photoelectric detector.
Description
technical field [0001] The invention relates to a method for preparing a photodetector and a prepared wide-angle photodetector, belonging to the technical field of semiconductor optoelectronics. Background technique [0002] Photodetectors are widely used in fields such as biomedicine, data storage media, flame monitoring, ultraviolet dose measurement, high-energy ray detection, medical treatment, security inspection, and industrial flaw detection. When the incident light energy is greater than the forbidden band width of the photodetector material, electrons will transition from the valence band to the conduction band, generating electron-hole pairs, which are collected by the electrodes to form a photocurrent output. Quantum efficiency is one of the most important performance indicators for measuring photodetectors, which is mainly determined by photon incident efficiency, internal quantum efficiency and carrier collection efficiency. Due to the large difference in refrac...
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IPC IPC(8): H01L31/18H01L31/20H01L31/0216H01L31/08
CPCH01L31/02363H01L31/08H01L31/1804H01L31/184Y02P70/50
Inventor 郭霞周弘毅郭春威李冲
Owner SUZHOU NORTHEAGLE PHOTONIC SCI TEC