Frit mixture as well as application and preparation method thereof

Abstract

The invention provides a frit mixture which comprises glass powder, wherein the glass powder comprises low-melting-point frit and a filler, and the low-melting-point frit comprises 60-80 wt% of Bi2O3, 1-10 wt% of SiO2 and 1-10 wt% of ZnO. The frit composition can be applied to airtight type sealing of an electrical element, the glass transition temperature and the softening temperature are reduced, excellent low-temperature firing stability is shown, electrical devices are protected, and energy is saved.

Description

technical field [0001] The invention relates to a glass frit composition, its application and preparation method. Background technique [0002] Electrical components such as organic light emitting diodes (Organic Light Emitting Diode), light-emitting diode (LED) lighting fixtures or dye-sensitized solar cells (DSSC) need to be sealed to minimize the influence of moisture and gas from the outside to improve the performance of electrical components and service life. [0003] Among them, the organic light emitting diode is widely used in the display field, and is called an organic light emitting display (Organic Light Emitting Display, OLED). OLED displays have the advantages of high color contrast and wide viewing angle, but the electrodes and organic layers of OLED displays are easy to interact with the oxygen and moisture in the surrounding environment and cause aging. Therefore, the electrodes and organic layers in OLEDs need A hermetic seal from the surrounding environme...

AI Technical Summary

Problems solved by technology

[0005] U.S. Patent US6809049 discloses a glass frit system, which uses 45-80wt% ZnO, 5-45wt% B 2 o 3 , 1-35wt%P 2 o 5 system, its disadvantage is that due to the high ZnO and B 2 o 3 As a result, the softening temperature of the entire packaging material is as high as 500-580°C, which is not conducive to energy saving and environmental protection requirements

[0006] US patent US6309989 discloses a SnO-B 2 o 3 -P 2 o 5 Glass frit system, containing 30-70mol%SnO, 5-30mol%B 2 o 3 , and 24.1mol%-45mol%P 2 o 5 , its disadvantage is that the glass transition temperature of the glass frit is about 500°C, and the thermal expansion coefficient is as high as 105-150×10 -7 m / °C, so it cannot be applied to the sealing of electrical components as described so far

[0007] Chinese patent CN200310103589.X announced that it contains 30-70wt%V 2 o 5 ,10-30wt%P 2 o 5, 0.5wt%-25wt%Sb 2 o 3 The glass frit system contains very high vanadium pentoxide content, which leads to high production cost, easy bubbles in the melting process and not resistant to pickling

At the same time, too high Sb 2 o 3 content is also not conducive to the purpose of environmental protection

[0008] Chinese patent 200310103592.1 proposes a V 2 o 5 -P 2 o 5 -Sb 2 o 3 Components, added SiO 2, ZnO,Al 2 o 3， ZrO,B 2 o 3 , TiO 2 , WO 3 As a stabilizer of the system, its disadvantage is that V 2 o 5 The ratio is too high

[0009] At present, the vanadate system packaging glass frit has the disadvantages of expensive raw materials, easy foaming in the melting process, and not resistant to pickling

The coefficient of thermal expansion (CTE) of phosphate-based packaging glass frit is relatively high, and its chemical stability is poor. The encapsulation strength of encapsulation glass frit is not high

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