Voltage-sensitive ceramic resistor

A technology of varistor ceramics and resistors, which is applied in the field of electronic components, can solve the problems of complicated preparation methods, difficult preparation of oxide-based varistor ceramics, and difficulty in industrialization, and achieve simple preparation process, improvement of electrical varistor performance, and promotion of crystallization. The effect of boundary barriers

Inactive Publication Date: 2014-08-06
INNER MONGOLIA UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this type of process is much more complicated than the traditional mixed oxide ceramic preparation method, and the preparation process parameters must be adjusted according to different raw material compositions, which makes industrialization difficult and has not been used in large-scale production.
[0011] In summary, under the traditional mixed oxide process conditions, the existing oxide-based varistors are still difficult to prepare in a lower temperature range below 900 °C

Method used

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  • Voltage-sensitive ceramic resistor

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Experimental program
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Effect test

Embodiment 1

[0020] 1) Formula according to raw material components: (balance) ZnO+0.5mol%V 2 o 5 +0.1mol%TiO 2 +0.5mol% MnCO 3 +0.4mol%Co 2 o 3 Weighed analytically pure zinc oxide (ZnO), vanadium oxide (V 2 o 5 ), titanium oxide (TiO 2 ), manganese carbonate (MnCO 3 ) and cobalt oxide (Co 2 o 3)raw material. After weighing, the raw materials were ball-milled on a planetary ball mill for 12 hours, and the grinding medium was absolute ethanol and zirconium balls. After ball milling, remove the zirconium balls in the slurry, dry the slurry in an oven at about 80°C; get the required ceramics. The sintering temperature was 775°C, the holding time was 4 hours, and the heating rate was 4°C / min. After sintering, the upper and lower surfaces of the sample are ground, burnt into silver electrodes, welded leads and necessary packaging to make the required varistor. Its voltage-current nonlinear coefficient is 20, the varistor voltage is 2145V / mm, and the leakage current density is 0.4...

Embodiment 2

[0022] Formula according to raw material components: (balance) ZnO+0.5mol%V 2 o 5 +0.5mol%TiO 2 +0.5mol% MnCO 3 +0.5mol%Co 2 o 3 + 0.01mol%Bi 2 O 3 Weighed analytically pure zinc oxide (ZnO), vanadium oxide (V 2 o 5 ), titanium oxide (TiO 2 ), manganese carbonate (MnCO 3 ) and cobalt oxide (Co 2 o 3 )raw material. After weighing, the raw materials were ball-milled on a planetary ball mill for 12 hours, and the grinding medium was absolute ethanol and zirconium balls. After ball milling, the zirconium balls in the slurry are removed, and the slurry is dried in an oven at about 80°C; then the traditional mixed oxide ceramic preparation method consisting of granulation, unidirectional pressure molding, debinding and sintering is used to produce Prepare the required ceramics. The sintering temperature is 800°C, and the holding time is 4 hours , the heating rate is 4°C / min. After sintering, the upper and lower surfaces of the sample are ground, burnt into silver ...

Embodiment 3

[0024] Formula according to raw material components: (balance) ZnO+0.5mol%V 2 o 5 +0.5mol%TiO 2 +0.5mol% MnO 2 +0.5mol%Co 2 o 3 + 0.2mol%Bi 2 O 3 Weighed analytically pure zinc oxide (ZnO), vanadium oxide (V 2 o 5 ), titanium oxide (TiO 2 ), manganese carbonate (MnCO 3 ) and cobalt oxide (Co 2 o 3 )raw material. After weighing, the raw materials were ball-milled on a planetary ball mill for 12 hours, and the grinding medium was absolute ethanol and zirconium balls. After ball milling, the zirconium balls in the slurry are removed, and the slurry is dried in an oven at about 80°C; then the traditional mixed oxide ceramic preparation method consisting of granulation, unidirectional pressure molding, debinding and sintering is used to produce Prepare the required ceramics. The sintering temperature is 800°C, and the holding time is 4 hours , the heating rate is 4°C / min. After sintering, the upper and lower surfaces of the sample are ground, burnt into silver e...

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Abstract

The invention relates to a voltage-sensitive ceramic resistor, particularly to a voltage-sensitive ceramic resistor sintered at the temperature of 800 DEG C by adopting a traditional ceramic technology, and belongs to the field of electronic components. According to the voltage-sensitive resistor, 0.25%-2.0% mole of vanadium oxide and 0.2%-0.7% mole of titanium oxide are doped simultaneously to ensure the low temperature sintering property, and on the basis of that, manganese carbonate or manganese oxide, cobaltous oxide, cobaltous oxide, bismuth oxide and the like are continuously added to ensure the excellent voltage-sensitive property. When the voltage-sensitive ceramic resistor is prepared by adopting the traditional oxide ceramic technology, the ceramic body can be sintered at the temperature of about 800 DEG C, the highest nonlinear coefficient can up to more than 40, the leakage current is about 0.3 mA/cm<2>, the voltage-sensitive voltage is 300-2000 V/mm. The voltage-sensitive ceramic resistor is simple in preparation technology and excellent in performance, and is an excellent candidate material for the low-cost voltage-sensitive resistor and the plate voltage-sensitive resistor; rare earth oxides are not required to be added.

Description

technical field [0001] The invention relates to a varistor ceramic resistor, in particular to a varistor ceramic resistor sintered at 800°C by adopting a traditional ceramic process, and belongs to the field of electronic components. technical background [0002] The varistor is a resistor whose own resistance shows a typical nonlinear change with the increase of the applied voltage: when the applied voltage is less than its switching voltage (the so-called varistor voltage), its resistance is extremely large; when the applied voltage exceeds the switching voltage, its internal The resistance will decrease in a very short time, bringing itself close to the conduction state. When such a resistor is connected in parallel with the protected circuit, once the voltage overload occurs in the circuit, that is, when the surge voltage in the circuit is greater than the varistor voltage, the varistor can quickly bypass the overload to avoid overload damage to the circuit. Therefore,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/622
Inventor 赵鸣李海松李保卫任慧平石钰
Owner INNER MONGOLIA UNIV OF SCI & TECH
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