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Package structure for reducing thermal resistance of large-power LED and manufacturing method thereof

A technology of packaging structure and manufacturing method, applied in electrical components, electrical solid devices, circuits, etc., can solve problems such as affecting the optical performance of LEDs, degrading color temperature quality, and increasing the temperature of chip junctions, so as to reduce interface thermal resistance and diffusion heat. resistance, improve performance, and improve the effect of heat dissipation

Inactive Publication Date: 2014-08-20
SHANGHAI UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the heat cannot be exported in time, the temperature of the chip junction will gradually increase, which will directly affect the optical performance of the LED (such as wavelength red shift, reduced luminous efficiency, reduced luminous intensity, etc.) and reliability (such as shortened life, reduced color temperature, etc.) Wait

Method used

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  • Package structure for reducing thermal resistance of large-power LED and manufacturing method thereof
  • Package structure for reducing thermal resistance of large-power LED and manufacturing method thereof
  • Package structure for reducing thermal resistance of large-power LED and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0030] In the reflow soldering process, the manufacturing method of the packaging structure that can reduce the thermal resistance of the LED is as follows: first, the substrate 9 with a thickness of 0.7 mm is manufactured by precision machining, and then the substrate 9 (aluminum oxide or aluminum nitride ceramics) is covered. The positive electrode 7 is made of copper, and the positions of the positive electrode 7, the negative electrode 2, the bottom positive electrode 10, the heat dissipation surface 11, and the bottom negative electrode 12 are sequentially plated with nickel, gold (or silver), and then through-holes are made by mechanical finishing technology Connect the positive electrode 7 and the negative electrode 2 to the bottom positive electrode 10 and the bottom negative electrode 12 respectively; first coat AuSn on the positive electrode 7 (in the center of the substrate), and then place the LED chip on the AuSn correspondingly , and finally the placed LED chip 5 ...

Embodiment 2

[0032] In this reflow soldering process, the manufacturing method of the packaging structure that can reduce the thermal resistance of the LED is as follows: the substrate 9 with a thickness of 0.7mm is manufactured by a precision machining method, and the positive electrode 7, the negative electrode 2, the bottom positive electrode 10, and the bottom negative electrode need to be fabricated. The insulating layer is made on the position of the electrode 12 (it can be silicon oxide); nickel plating and gold plating are performed on the positions of the positive and negative electrodes and the heat dissipation surface through nickel plating and gold plating technology (which can be CVD evaporation, chemical plating, etc.), Manufacture the positive electrode 7, negative electrode 2, bottom positive electrode 10, heat dissipation surface 11, bottom negative electrode 12 and other circuit layers, and make through holes through laser drilling technology or mechanical finishing technol...

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Abstract

The invention relates to a packaging structure for reducing the thermal resistance of a large-power LED and a manufacturing method thereof. The package structure includes a sealing layer, a cathode, a florescent slice, a gold wire, an LED chip, a metal interconnection layer, an anode, a through hole, a substrate, a bottom anode, a heat dissipating face and a bottom cathode. In an interconnection process of the chip and the substrate, the chip is packaged at the center position of the substrate. The substrate is 0.7mm in thickness so that reduction of a spreading thermal resistance is facilitated. During reflow soldering, the die bonding pressure is 2N to 3N so that generation of holes in the interconnection layer is reduced significantly and thus an interface thermal resistance is reduced. A die bonding material adopts AuSn and the AuSn material is high in heat conductivity and small in number of generated holes. Therefore, the package method is benefit to reduction of the interface thermal resistance and the spreading thermal resistance so that the heat dissipation performance of an LED module is improved and the performance of the LED is improved.

Description

technical field [0001] The invention relates to a packaging structure for reducing the thermal resistance of high-power LEDs and a manufacturing method thereof, belonging to the field of packaging of semiconductor devices. Background technique [0002] With the continuous improvement of power, efficiency and reliability of high-power LED, its application scope is more and more extensive. Its potential market prospect and economic value are immeasurable. A series of advantages of LED lighting (high brightness, long life, energy saving and environmental protection, Bright colors, etc.) make it a fourth-generation lighting source. [0003] In order to meet people's lighting requirements, high-power LEDs can increase their power by increasing the input current, but the electro-optical conversion efficiency of LEDs is only 10% to 40%, and at least 60% of the electrical energy is converted into heat at the junction. If the heat cannot be exported in time, the temperature of the c...

Claims

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Application Information

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IPC IPC(8): H01L33/48H01L33/62H01L33/64
CPCH01L2224/32225H01L2224/45144H01L2224/48091H01L2224/48227H01L2224/73265H01L2924/15153H01L2924/15313H01L2924/16195H01L2924/00012H01L2924/00H01L33/48H01L33/62H01L33/647H01L2224/91H01L2933/0033H01L2933/0066
Inventor 殷录桥张建华张金龙宋朋白杨周颖圆杨卫桥熊峰
Owner SHANGHAI UNIV