Photovoltaic battery with efficient charge separation layer
A technology of charge separation layer and photovoltaic cell, which is applied in the direction of photosensitive equipment, etc., can solve the problems of reducing the surface state and limited objects to be processed, and achieve the effects of inhibiting interface recombination, accelerating electron transport, and improving photoelectric conversion efficiency
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Embodiment 1
[0049] Embodiment 1 (perovskite porous cell structure)
[0050] First, a layer of TiO was spin-coated on the FTO conductive glass 2 Dense layer, after calcination at 500°C for 30min, a layer of TiO is screen printed 2 The porous scaffold layer is then calcined at 500°C for 30min. The dense layer has a thickness of 50-80nm, and the porous scaffold layer has a thickness of 300-400nm.
[0051] The preparation method of the charge separation thin film layer is as follows: the membrane obtained above is respectively immersed in 0.1M concentration Pb(NO 3 ) 2 and 0.1M concentration KI solution for 30s, take out and wash 3 times with deionized water. This counts as one cycle. Repeat for a total of 10 cycles. Get 1nm of PbI 2 charge-separating membrane layer.
[0052] Configure a one-step solution of methylamine lead iodide perovskite, in which PbI 2 and CH 3 NH 31 molar ratio 1:1, mass fraction 40%, soluble in dimethylformamide (DMF). Spin-coat the above-mentioned one-ste...
Embodiment 2
[0057] Embodiment 2 (perovskite planar cell structure)
[0058] Spin-coat about 100nm thick TiO on cleaned FTO glass 2 Dense layer, and then use the SILAR method to prepare a layer of ultra-thin PbI on the bottom layer 2 (approximately 1-2 nm), followed by spin-coating of a Cl-doped one-step perovskite solution. The formula is as follows: PbCl 2 with CH 3 NH 3 I molar ratio 1:3, be dissolved in DMF solution, mass fraction 40%. Then spin-coat at 2000rpm for 45s, heat-treat at 100°C for 45min, and then spin-coat the above-mentioned HTM hole transport material.
Embodiment 3
[0064] Embodiment 3 (quantum dot battery structure)
[0065] First, a transparent layer of SnO is scraped on the cleaned FTO substrate 2 About 2um, calcined at 450°C for 30 minutes, and then scraped a layer of scattering layer SnO 2 , with a thickness of about 10um, calcined at 500°C for 30min. Then prepare PbI by the method of SILAR 2 The charge separation layer is about 2nm. CBD then deposits CdS / CdSe quantum dots. The method is as follows: first deposit a CdS seed layer, mix CdCl 2 , NH 4 Cl, ammonia water, and thiourea solution were kept at 10°C in a constant temperature water tank, and the substrate was immersed in the mixed solution, kept at 10°C, and reacted for 40 minutes. CdSe is then deposited. The method is as follows: prepare a mixed solution of sodium aminotriacetate (NTA), cadmium sulfate (CdSO4), and sodium selenosulfite (Na2SeSO3), immerse the substrate obtained above in the mixed solution and react at 10°C for 5 hours, take out nitrogen and blow it dry,...
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