Integrated back board for high-reflectivity solar cells and manufacturing method thereof

A solar cell, high reflectivity technology, applied in final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of contaminating cells, reducing the amount of light on cells, reducing the photoelectric conversion efficiency of modules, etc. The effect of production efficiency

Inactive Publication Date: 2014-09-03
ZHONGTIAN PHOTOVOLTAIC MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to improve the output power of the module, the method of encapsulating the module with high-reflectivity EVA film is currently used. This method is mainly to add reflective fillers to the eva film and use it as the lower encapsulation film in the crystalline silicon solar cell module. The intensity and proportion of reflected light in the non-covered area of ​​the battery sheet are improved, thereby improving the power generation efficiency of the module, but this method has obvious defects, and the white filler in the eva glue film in the molten state will occur with the flow of eva glue Lateral migration, penetrating into the surface of the cell and contaminating the cell, which reduces the amount of light on the cell when the surface of the cell reflects sunlight, and reduces the photoelectric conversion efficiency of the module

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The adhesive is coated on both sides of the PET substrate with a thickness of 250 microns to form a bonding layer with a thickness of 10 microns, and the adhesive is baked and cured at 80-90°C for 10 minutes. Then heat-compress PVDF films with a thickness of 28 microns on the back of the PET at 110°C. Then, at 150°C, a 300-micron-thick polypropylene film containing 10% by mass fraction of titanium dioxide was hot-compressed on the front of the PET, and the size of the titanium dioxide was 300-400nm. Then, the EVA film with a thickness of 350 microns was hot-compressed on the surface of the polypropylene film at 110°C, cured at 60°C for 24 hours after winding, and an integrated high-reflectivity photovoltaic backplane was obtained after cooling.

Embodiment 2

[0021] The adhesive is coated on both sides of the PET substrate with a thickness of 180 microns to form a bonding layer with a thickness of 10 microns, and the adhesive is baked and cured at 80-90°C for 10 minutes. Then heat-compress a polyvinyl fluoride film with a thickness of 35 microns on the back of the PET at 80°C. Then, at 160°C, a polyolefin film with a thickness of 300 microns containing 10% by mass fraction of silicon dioxide was hot-compressed and laminated on the front of the PET, and the size of the silicon dioxide was 200nm. Then heat-compress the EVA film with a thickness of 300 microns on the surface of the polyolefin film at 110°C, roll it up and mature it at 60°C for 24 hours, and obtain an integrated high-reflectivity photovoltaic backplane after cooling.

Embodiment 3

[0023] The adhesive is coated on both sides of the PET substrate with a thickness of 180 microns to form a bonding layer with a thickness of 10 microns, and the adhesive is baked and cured at 80-90°C for 10 minutes. Then, a polyvinylidene fluoride film with a thickness of 30 microns is hot-pressed on the back of the PET at 110°C. Then, at 150°C, a polypropylene film with a thickness of 300 microns containing 10% by mass fraction of silica was hot-compressed and laminated on the front side of the PET, and the size of the silica was 200nm. Then heat-compress and compound a polyolefin film with a thickness of 350 microns on the surface of the polypropylene film at 110°C. After winding, it is aged at 60°C for 24 hours. After cooling, an integrated high-reflectivity photovoltaic backplane is obtained.

[0024] By adopting the above-mentioned integrated structure, the process of laying the lower encapsulating adhesive film in the production process of the module is reduced, and the ...

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PUM

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Abstract

The invention discloses an integrated back board for high-reflectivity solar cells. The integrated back board is characterized by comprising a barrier layer installed on the back face of a substrate and bonded to the back face of the substrate through a first bonding layer, a high-reflectivity layer installed on the front face of the substrate and bonded to the front face of the substrate through a bonding layer, and a protective layer installed on the high-reflectivity layer. Through the integrated structure, the production efficiency of the module can be improved. Because the materials are adopted for the back face of the substrate and high-reflectivity additives are added into the high-reflectivity layer on the front face of the substrate, the sunlight reflectivity of the back board is further improved, and then the electricity generating efficiency of the module is improved. Compared with a traditional method in which light reflecting filler is added to an eva adhesive film, the problem that the cells are polluted due to white filler migration which happens after eva modification is directly avoided.

Description

technical field [0001] The invention relates to an integrated backplane for solar cells with high reflectivity and a manufacturing method thereof, in particular to an integrated backplane for solar cells with high reflectivity and a manufacturing method thereof, belonging to the field of photovoltaic technology. Background technique [0002] The power generation of photovoltaic modules is directly related to the conversion efficiency of the cells and the light intensity incident on the cells. In order to improve the output power of the module, the method of encapsulating the module with high-reflectivity EVA film is currently used. This method is mainly to add reflective fillers to the eva film and use it as the lower encapsulation film in the crystalline silicon solar cell module. The intensity and proportion of reflected light in the non-covered area of ​​the battery sheet are improved, thereby improving the power generation efficiency of the module, but this method has o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/049H01L31/18
CPCY02E10/50H01L31/18Y02P70/50
Inventor 陈坤王同心刘晓娇王强蒋贤明
Owner ZHONGTIAN PHOTOVOLTAIC MATERIALS
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