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Graphene/carbon nano tube/graphite film composite material and preparation method thereof

A carbon nanotube and composite material technology, which is applied in chemical instruments and methods, metal material coating process, superimposed layer plating, etc., can solve the problem of low thermal conductivity of graphite heat sinks, inability to transfer heat to metals, and poor interface properties. etc., to achieve the effect of easy processing, high thermal conductivity, excellent flexibility and tensile strength

Inactive Publication Date: 2014-09-10
JIANGSU YUEDA NEW MATERIALS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to ensure the operation reliability of components, it is necessary to use materials with excellent comprehensive properties such as high reliability and high thermal conductivity to quickly and timely transfer the heat accumulated by heating elements to heat dissipation equipment to ensure the normal operation of electronic equipment. Most of the existing technologies Metal heat sinks and graphite heat sinks are used. Although metal heat sinks have high thermal conductivity, their interface properties are very poor, and there is a large contact thermal resistance when in contact with heat sources. cooling
The thermal conductivity of graphite heat sinks in the longitudinal direction is very low, and its interface properties are relatively poor, and it cannot transfer heat from the heat source well.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Select polyimide film as the raw material, stack it crosswise, place it in a carbonization furnace and heat it up to the carbonization temperature within a certain period of time for carbonization, then move the carbonized material to the graphitization furnace for graphitization, take it out and calender it to obtain graphite film. The nickel catalyst layer was first prepared on the graphite film using a magnetron sputtering system, where the sputtering flow rate was 15 sccm, the sputtering jet power was 100 W, and the air pressure was 1 Pa. Then, high-temperature annealing was performed at 800 °C. A graphene film was prepared on a nickel-plated graphite film by vapor deposition method, the growth pressure was 10kPa, the hydrogen flow rate was 200 sccm, the methane flow rate was 30 sccm, the temperature was 550° C., and the time was 1 h. The graphite film covered with catalyst and graphene was placed in a vapor deposition system to grow carbon nanotubes, the growth pre...

Embodiment 2

[0016] Select the polyimide film material as the raw material, stack it crosswise, place it in the carbonization furnace to heat up to the carbonization temperature within a certain period of time, and carry out carbonization, then move the carbonized material to the graphitization furnace for graphitization, take out and calender A graphite film was obtained. The nickel catalyst layer was first prepared on the graphite film using a magnetron sputtering system, where the sputtering flow rate was 20 sccm, the sputtering jet power was 120 W, and the air pressure was 1 Pa. Then, high-temperature annealing was performed at 900 °C. A graphene film was prepared on a nickel-plated graphite film by vapor deposition method, the growth pressure was 12kPa, the flow rate of hydrogen was 250 sccm, the flow rate of methane was 40 sccm, the temperature was 600° C., and the time was 1 h. The graphite film covered with catalyst and graphene was placed in a vapor deposition system to grow carbo...

Embodiment 3

[0018] Select the polyimide film material as the raw material, stack it crosswise, place it in the carbonization furnace to heat up to the carbonization temperature within a certain period of time, and carry out carbonization, then move the carbonized material to the graphitization furnace for graphitization, take out and calender A graphite film was obtained. The nickel catalyst layer was first prepared on the graphite film using a magnetron sputtering system, where the sputtering flow rate was 25 sccm, the sputtering jet power was 150 W, and the air pressure was 2 Pa. Then, high-temperature annealing was performed at 900 °C. A graphene film was prepared on a nickel-plated graphite film by vapor deposition method, the growth pressure was 12kPa, the flow rate of hydrogen was 300 sccm, the flow rate of methane was 40 sccm, the temperature was 700° C., and the time was 1 h. The graphite film covered with catalyst and graphene was placed in a vapor deposition system to grow carbo...

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Abstract

The invention discloses a graphene / carbon nano tube / graphite film composite material and a preparation method thereof. The composite material is formed by performing composite molding on a graphene layer, a carbon nano tube layer and a graphite film through a rewinding machine and has high heat-conducting property; the novel composite material has extremely high heat-conducting coefficient in the three-dimensional direction, and heat centralized to one point can be rapidly conducted to a composite heat-conducting plate, so that the temperature of a heat source in an electronic device is reduced, and the composite material has high flexibility, machinability, electro-magnetic interference (EMI) shielding property and absorption characteristics. Moreover, the preparation process is simple, the cost is low and the composite material is suitable for industrial production.

Description

technical field [0001] The invention relates to a heat dissipation film material used in electronic components, in particular to a graphene / carbon nanotube / graphite film composite material and a preparation method thereof. Background technique [0002] At present, with the rapid development of microelectronics integration technology and high-density printed board assembly technology, the assembly density has increased rapidly, the volume of electronic components and logic circuits has been reduced by tens of thousands of times, and electronic instruments and equipment have become increasingly light, thin, short, and small. direction development. Under high-frequency operating frequency, the working thermal environment of semiconductors moves rapidly towards high temperature. At this time, the heat generated by electronic components accumulates and increases rapidly. Under the ambient temperature of use, electronic components must still work normally with high reliability , ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B38/18B32B37/10C23C28/00
Inventor 成文俊蔡铜祥杨玉晴
Owner JIANGSU YUEDA NEW MATERIALS TECH
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