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Manufacturing process of ultrathin crystal silicon flexible solar cell

A technology for solar cell sheets and manufacturing processes, applied in the field of solar cells, can solve problems such as easy breakage, and achieve the effects of avoiding debris, increasing curvature, and reducing warpage.

Inactive Publication Date: 2014-09-10
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0019] The thickness of conventional crystalline silicon solar cells ranges from 220 μm to 180 μm. Crystalline silicon solar cells are brittle and easy to break when bent; when the thickness of crystalline silicon solar cells drops from 200 μm to below 120 μm, they can show good bendability characteristics. It is of great significance to study a suitable preparation process for the preparation of ultra-thin crystalline silicon flexible solar cells

Method used

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  • Manufacturing process of ultrathin crystal silicon flexible solar cell

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Embodiment 1

[0045] Adopt 156×156cm 2 Single crystal silicon wafer with a thickness of 150 μm, using the above-mentioned process 1 for damage removal and textured process, single crystal silicon: 0.5-3Ω·cm, concentration of sodium hydroxide: 1%, concentration of isopropanol 5%, in React at 85°C for 25 minutes to form textured surfaces with uniform size on the silicon surface.

[0046] Fabrication of SiN on the front side using the PECVD deposition process described above x Protective film: SiN x The film thickness is 100nm. The refractive index is controlled at 2.1.

[0047] Thinning and removing SiN on the front side using the backside etch described above x Protective film process: the corrosion tank is a high-concentration sodium hydroxide solution, the concentration is 10%, the reaction time is 35mins, the thickness of the crystal silicon wafer is reduced from 150μm to 70μm after thinning. The cleaning tank is dissolved in 10% hydrofluoric acid, and the reaction time is 10mins to ...

Embodiment 2

[0054] Adopt 156×156cm 2 Single crystal silicon wafer with a thickness of 150 μm, using the above-mentioned process 1 for damage removal and textured process, single crystal silicon: 0.5-3Ω·cm, concentration of sodium hydroxide: 1%, concentration of isopropanol 5%, in React at 85°C for 25 minutes to form textured surfaces with uniform size on the silicon surface.

[0055] Fabrication of SiN on the front side using the PECVD deposition process described above x Protective film: SiN x The film thickness is 150nm. The refractive index is controlled at 2.1.

[0056] Thinning and removing SiN on the front side using the backside etch described above x Protective film process: the corrosion tank is a high-concentration sodium hydroxide solution with a concentration of 10%, and the reaction time is 30mins. The thickness of the crystal silicon wafer is reduced from 150μm to 100μm after thinning. The cleaning tank is dissolved in 10% hydrofluoric acid, and the reaction time is 15m...

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Abstract

The invention discloses a manufacturing process of an ultrathin crystal silicon flexible solar cell. The process comprises steps of damage removing and etching on double surfaces, SiNx protective film deposition in the front face, corrosion and thinning in the back face, front-face SiNx protective film removing, diffusion junction, edge cutting and PSG removing, SiNx antireflective coating deposition, screen printed electrode, co-sintering and the like. A 50 to 120 mum silicon wafer can be obtained through the back-face corrosion and thinning step, the curvature of the silicon wafer is increased, fragmented wafers during batch production can be effectively avoided, the yield is improved, the thickness of the back-face aluminum back surface field can be reduced, the warp degree of the flexible solar cell is reduced after high temperature sintering, and the fragmented wafer rate is reduced. the solar cell manufactured by the process has the advanategs of light weight, high efficiency, fiexibility and the like, and can be applied to certain special fields, such as individual equipment, stratospheric airship and unmanned aerial vehicle.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a manufacturing process of ultra-thin crystalline silicon flexible solar cells. Background technique [0002] During the application of crystalline silicon solar cells, the work of increasing the application range of solar cells and improving the efficiency of solar cells has not stopped. In recent years, with the vigorous development of the solar energy industry, new demands have been placed on the application of solar cells under the new situation. At present, the general crystalline silicon solar cell module integrates toughened glass, conventional crystalline silicon cell array, adhesive and transparent film, and assembles a frame around it to protect the glass. This device is only suitable for large solar power stations, roofs, etc. Construction sector. Although there have been a series of improvements since then, the basic feature of crystalline silicon solar cells is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/02168H01L31/022425H01L31/1804Y02E10/547Y02P70/50
Inventor 刘文峰陆运章杨晓生姬常晓成文
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP