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A method of sulfur-doping graphene

A technology of graphene and sulfur doping, applied in the field of materials, to achieve the effects of controllable doping, simple and efficient sulfur doping, and low economic cost

Active Publication Date: 2016-12-28
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In graphene, electrons can move extremely efficiently, while traditional semiconductors and conductors, such as silicon and copper, do not perform as well as graphene

Method used

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  • A method of sulfur-doping graphene
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  • A method of sulfur-doping graphene

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Embodiment 1

[0035] Such as Figure 1 ~ Figure 3 As shown, this embodiment provides a method for sulfur doping graphene, which at least includes the following steps:

[0036] First, perform step 1) S11, provide graphene, and place the graphene in a chemical vapor deposition reaction chamber;

[0037] Then proceed to step 2) S12, using inert gas to vent and exhaust the reaction chamber;

[0038] Then proceed to step 3) S14, passing a sulfur source gas at 500 to 1050°C to sulfur dope the graphene;

[0039] Finally, step 4) S15 is performed to cool the reaction chamber in a hydrogen and inert gas atmosphere.

[0040] As an example, the structure of the chemical vapor deposition reaction chamber is figure 1 As shown, the tube furnace 101, the quartz tube 102, and the air passage 103 are included.

[0041] As an example, the graphene 104 is placed in the reaction chamber with a metal substrate as a carrier. After step 2), it further includes step a) S13, in which hydrogen gas is fed into the reaction cha...

Embodiment 2

[0049] Such as figure 1 and Figure 4 As shown, this embodiment provides a method for sulfur doping graphene, which at least includes the following steps:

[0050] First, perform step 1) S21, provide graphene, and place the graphene in a chemical vapor deposition reaction chamber;

[0051] Then proceed to step 2) S22, using inert gas to vent and exhaust the reaction chamber;

[0052] Then proceed to step 3) S23, introducing a sulfur source gas at 500-1050°C to dope the graphene with sulfur;

[0053] Finally, step 4) S24 is performed to cool the reaction chamber in a hydrogen and inert gas atmosphere.

[0054] As an example, the structure of the chemical vapor deposition reaction chamber is figure 1 As shown, the tube furnace 101, the quartz tube 102, and the air passage 103 are included.

[0055] As an example, in step 1), the graphene 104 is placed in the reaction chamber using a silicon substrate with an insulating layer as a carrier. The graphene on the insulating substrate is direct...

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Abstract

The invention provides a sulfur doping method for graphene. The method comprises the steps of: 1) providing graphene and placing the grapheme in a chemical vapor deposition reaction chamber; 2) employing an inert gas to conduct ventilation and exhaust treatment on the reaction chamber; 3) introducing a sulfur source gas to perform sulfur doping on the graphene at 500-1050DEG C; and 4) cooling the reaction chamber in a hydrogen and inert gas atmosphere. The method provided by the invention can perform sulfur doping on the graphene simply and efficiently, the economic cost is low, and large-scale production can be realized. Large area sulfur doping on graphene can be realized, and doping of graphene on an insulating substrate or metal substrate can be carried out directly, thus facilitating making of sulfur doped graphene devices. In the preparation process, the sulfur doping concentration can be controlled by adjusting the sulfur source gas flow, thereby realizing controllable doping on graphene.

Description

Technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a method for sulfur doping graphene. Background technique [0002] Graphene is a planar monoatomic layer film material formed by carbon atoms arranged in a two-dimensional regular hexagonal honeycomb lattice. Since graphene has outstanding thermal conductivity and mechanical properties, high electron mobility, half-integer quantum Hall effect and other properties, since it was first discovered in 2004, graphene has attracted widespread attention from the scientific community and set off a wave Research boom. [0003] Graphene is made of sp 2 The single-layer planar graphite with hybrid carbon atom bonding and a two-dimensional hexagonal lattice honeycomb structure has extremely high crystal quality and electrical properties. As a strict two-dimensional crystal material, graphene has unique physical properties, with a carrier concentration of up to 1013 cm -2 , The mobili...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B31/08
Inventor 梁晨李铁王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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