Thin film transistor and its manufacturing method
A thin-film transistor and metal technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems affecting the performance of thin-film transistors, threshold voltage shift, leakage current increase, etc.
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Embodiment 1
[0046] Embodiment 1: A thin film transistor, comprising: a gate electrode 200 on a substrate 100; a gate insulating layer 300 on the gate electrode 200; an indium gallium zinc oxide layer 400 on the gate insulating layer 300, indium gallium zinc oxide The drain groove 410 and the source groove 420 are arranged on the object layer 400; the etch barrier layer 500 on the indium gallium zinc oxide layer 400, the etch barrier layer 500 is distributed on the groove bottom not including the drain groove 410 The middle part and the upper surface of the InGaZn oxide layer 400 in the middle part of the groove bottom of the source groove 420, as long as the source electrode 600 and the drain electrode 700 can be in contact with the InGaZn oxide layer 400; The drain electrode 700 filling the remaining gaps in the drain groove 410 except the indium gallium zinc oxide layer 400 and the source electrode 600 filling the remaining gaps in the source groove 420 except the indium gallium zinc oxi...
Embodiment 2
[0054] Embodiment 2: Similar to the previous embodiment, the difference is that the etch barrier layer 500 on the indium gallium zinc oxide layer 400 is only distributed in the grooves excluding the drain groove 410 and the source groove 420 The upper surface of the indium gallium zinc oxide layer 400, see image 3 , that is, there is no etch stop layer 500 on the walls and bottom of the drain groove 410 and the wall and bottom of the source groove 420 .
[0055] One of the embodiments of the manufacturing method of the thin film transistor of the present invention is described below, Figure 4 It is a flowchart of a manufacturing method of a thin film transistor according to one embodiment of the present invention, combined with figure 1 , figure 2 with Figure 4 .
Embodiment 3
[0056] Embodiment 3: a method for manufacturing a thin film transistor, comprising steps:
[0057] Step S110 : providing a substrate 100 .
[0058] Step S120 : forming a gate electrode 200 on the substrate 100 . The gate electrode 200 can be formed by a sputtering process, and the gate electrode 200 is made of metal, including any one of Mo, Al, Cu, Ag, Au, Ti or an alloy metal composed of two or more.
[0059] Step S130 : forming a gate insulating layer 300 on the gate electrode 200 . The gate insulating layer 300 can be formed by a chemical vapor deposition process, and the material of the gate insulating layer 300 can be silicon dioxide, silicon nitride or aluminum oxide.
[0060] Step S140 : forming an InGaZn oxide layer 400 on the gate insulating layer 300 , and forming a drain groove 410 and a source groove 420 on the InGaZn oxide layer 400 . The InGaZn oxide layer 400 may be formed by a physical vapor deposition process, and the drain groove 410 and the source groove...
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