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Silicon-Based One-dimensional Dielectric-Surface Plasmon Coupled Waveguide Device

A surface plasmon, coupled waveguide technology, applied in the directions of light guides, instruments, optical components, etc., can solve the problems of incompatibility, difficult to expand the tunable range of SP resonance frequency, etc., to achieve efficient tuning space, low loss, long-distance transmission Effect

Inactive Publication Date: 2017-02-22
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the inherent dielectric properties of noble metal materials make it difficult to extend the tunable range of its SP resonant frequency to the infrared band.
More importantly, the preparation method of precious metal materials is not compatible with standard integrated circuit technology (CMOS)

Method used

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  • Silicon-Based One-dimensional Dielectric-Surface Plasmon Coupled Waveguide Device
  • Silicon-Based One-dimensional Dielectric-Surface Plasmon Coupled Waveguide Device
  • Silicon-Based One-dimensional Dielectric-Surface Plasmon Coupled Waveguide Device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] See Figure 4 , a silicon-metal silicide CoSi with a diameter of 40 nm and a length of 80 nm2 A diagram of the coupled transport electromagnetic field distribution of a one-dimensional nanowire structure. It can be seen that the incident light source is incident from the silicon one-dimensional structure end on the left, and the transmitted electromagnetic energy can be detected at the metal silicide one-dimensional structure end on the right. The incident wavelengths of (a), (b) and (c) are 0.8 μm, 0.97 μm and 1.23 μm, respectively. By comparison, it can be found that when the incident wavelength is 0.97 μm, the electromagnetic field detected at the right end is the strongest. At this time, the coupling transmission efficiency of the waveguide structure is higher than that of 0.8 μm and 1.23 μm.

Embodiment 2

[0034] See Figure 5 , a silicon-metal silicide CoSi with a diameter of 40 nm and a length of 120 nm 2 A diagram of the coupled transport electromagnetic field distribution of a one-dimensional nanowire structure. It can be seen that the incident light source is incident from the silicon one-dimensional structure end on the left, and the transmitted electromagnetic energy can be detected at the right silicide one-dimensional structure end. The incident wavelengths of (a), (b) and (c) are 0.97 μm, 1.23 μm and 1.7 μm, respectively. By comparison, it can be found that when the incident wavelength is 1.23 μm, the electromagnetic field detected at the right end is the strongest. At this time, the coupling transmission efficiency of the waveguide structure is higher than that of 0.97 μm and 1.7 μm.

Embodiment 3

[0036] See Image 6 , a one-dimensional silicon-metal silicide CoSi with a diameter of 40 nm and a length of 80 nm 2 - Diagram of coupled transport electromagnetic field distribution of silicon nanowire structure. The incident wavelengths of (a), (b) and (c) are 0.97 μm, 1.23 μm and 1.7 μm, respectively. It can be seen that the incident light source is incident from the left side of the silicon one-dimensional structure, and after the surface plasmon wave coupling in the middle metal silicide, the transmitted electromagnetic energy can be detected at the right side of the silicon one-dimensional structure. When the incident wavelength is 1.23 μm, the electromagnetic field detected at the right end is the strongest. At this time, the coupling transmission efficiency of the waveguide structure is higher than that of 0.97 μm and 1.7 μm.

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Abstract

The invention discloses a Si-based one-dimensional dielectric-surface plasma coupling waveguide device which is provided with a one-dimensional nanowire structure and at least comprises two nano column-shaped materials, the nano column-shaped materials at least comprise one silicon material and at least one metal silicide material, and the nano column-shaped materials with different material attributes are connected in an alternating mode. The device is coupled with a surface plasma mode in a one-dimensional metal silicide waveguide through an optical waveguide mode in a one-dimensional nana waveguide to form the one-dimensional coupling waveguide device. The device can adjust features of a surface plasma resonance mode by changing the length and diameter ratio of the one-dimensional metal silicide waveguide, and accordingly coupling efficiency of the silicon optical waveguide and the surface plasma waveguide is improved. Manufacturing of the device is compatible with a large-scale integrated circuit process, and the device works in an infrared communication wave band and has excellent application prospects in the field of Si-based photoelectricity and surface plasma integration field.

Description

technical field [0001] The invention belongs to the field of micro-nano optoelectronic devices and integration, and more specifically relates to the field of silicon-based optoelectronics and surface plasmon integration. Background technique [0002] With the rapid reduction of feature size in standard integrated circuit processes, the density of devices has increased significantly. The energy loss and electromagnetic interference caused by electrical interconnection have become the bottleneck restricting the development of silicon-based microelectronic integrated circuits. Integrated optical interconnection has become an important way to solve electrical interconnection problems due to its significant advantages in transmission bandwidth, anti-interference ability and energy loss. However, since photons are not localized, there is a diffraction limit, which limits the integration of photonic devices. [0003] Surface plasmon (Surface Plasmon, SP) is an electromagnetic wav...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/122
Inventor 程培红鲍吉龙吴礼刚赵红霞
Owner NINGBO UNIVERSITY OF TECHNOLOGY