Preparation method for copper/aluminium nitride ceramic composite heat-conductive substrate
An aluminum nitride ceramic and aluminum nitride substrate technology, which is applied in the chemical field, can solve the problems of poor bonding force between the metallized layer in the hole and the ceramic substrate, poor high-power current passing, difficult preparation of the through-hole aluminum nitride ceramic substrate, etc. , to facilitate die bonding and packaging, facilitate the transmission of electrical signals, and achieve ideal thermal conductivity.
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[0025] Example 1 Preparation of copper / aluminum nitride ceramic composite heat-conducting substrate
[0026] (1) if figure 2 As shown in A, a through-hole 8 is formed on the aluminum nitride ceramic substrate 1 by laser drilling. In this embodiment, the diameter of the through-hole 8 is 2 mm. In specific implementation, the diameter of the through-hole 8 can be controlled as required;
[0027] (2) Coating copper-based electronic paste on both sides of the aluminum nitride substrate 1, and sintering in air at 1000°C-1100°C for 45min, such as figure 2 As shown in B, the copper oxide layer 2 is formed to realize the connection between the copper oxide layer 2 and the aluminum nitride ceramic substrate 1. In this embodiment, the thickness of the copper oxide layer 2 is 20 μm. In the specific implementation process, the copper oxide layer 2 can be controlled as required. The thickness of the oxide layer 2 is in the range of 5-50 μm;
[0028] The copper-based electronic paste de...
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