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Preparation method for copper/aluminium nitride ceramic composite heat-conductive substrate

An aluminum nitride ceramic and aluminum nitride substrate technology, which is applied in the chemical field, can solve the problems of poor bonding force between the metallized layer in the hole and the ceramic substrate, poor high-power current passing, difficult preparation of the through-hole aluminum nitride ceramic substrate, etc. , to facilitate die bonding and packaging, facilitate the transmission of electrical signals, and achieve ideal thermal conductivity.

Inactive Publication Date: 2014-09-24
NANJING MING KUANG ELECTRONICS TECH
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  • Abstract
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Problems solved by technology

[0005] In view of the above problems, a method for manufacturing a copper / aluminum nitride ceramic composite heat-conducting substrate is provided to solve the difficulties in the preparation of through-hole aluminum nitride ceramic substrates, the poor bonding force between the metallized layer and the ceramic substrate in the hole, and the passage of high-power currents. The technical problem of poor performance, the present invention is achieved in this way:

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  • Preparation method for copper/aluminium nitride ceramic composite heat-conductive substrate
  • Preparation method for copper/aluminium nitride ceramic composite heat-conductive substrate

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Embodiment 1

[0025] Example 1 Preparation of copper / aluminum nitride ceramic composite heat-conducting substrate

[0026] (1) if figure 2 As shown in A, a through-hole 8 is formed on the aluminum nitride ceramic substrate 1 by laser drilling. In this embodiment, the diameter of the through-hole 8 is 2 mm. In specific implementation, the diameter of the through-hole 8 can be controlled as required;

[0027] (2) Coating copper-based electronic paste on both sides of the aluminum nitride substrate 1, and sintering in air at 1000°C-1100°C for 45min, such as figure 2 As shown in B, the copper oxide layer 2 is formed to realize the connection between the copper oxide layer 2 and the aluminum nitride ceramic substrate 1. In this embodiment, the thickness of the copper oxide layer 2 is 20 μm. In the specific implementation process, the copper oxide layer 2 can be controlled as required. The thickness of the oxide layer 2 is in the range of 5-50 μm;

[0028] The copper-based electronic paste de...

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Abstract

The invention discloses a preparation method for a copper / aluminium nitride ceramic composite heat-conductive substrate. The method comprises the following steps: 1) providing through holes in the surface of an aluminium nitride substrate; 2) coating copper electronic paste layers on the double surfaces of the aluminium nitride substrate; 3) filling the through holes with pre-oxidation copper cylinders; 4) carrying out overall sintering for 30 min; 5) carrying out brazing after the double surfaces of the aluminium nitride substrate being coated with tin silver copper solder materials; 6) carrying out surface polishing; and 7) carrying out copper plating processing directly and forming uniform copper layers, and thus, the copper / aluminium nitride ceramic composite heat-conductive substrate is obtained. The through holes in the copper / aluminium nitride ceramic composite heat-conductive substrate produced with the preparation method are communicated up and down; the combination between the metalized layers in the holes and the ceramic substrate is strong; the middle copper cylinders can realize the communication of the copper layers on the upper and lower surfaces; and the copper / aluminium nitride ceramic composite heat-conductive substrate helps the transmission of electrical signals and has the advantages of ideal heat-conductive effect, low thermal expansion coefficients and good conductivity and the like.

Description

technical field [0001] The invention relates to the field of chemistry, in particular to a method for manufacturing a copper / aluminum nitride ceramic composite heat-conducting substrate. Background technique [0002] With the development of the electronics industry, the power of unit electronic devices continues to increase, and its requirements for heat dissipation of circuit substrates have increased accordingly. Materials suitable for heat dissipation substrates include metal substrates, ceramic metallized substrates, and metal matrix composite materials. Compared with Metal substrates, ceramics themselves have the advantages of high resistance, good insulation performance, high thermal conductivity, good chemical stability, excellent thermal stability, high melting point, and can be used at high temperatures, especially aluminum nitride ceramic substrates due to their high thermal Conductivity, non-toxic and other characteristics, it is recognized as the most promising h...

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Application Information

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IPC IPC(8): H01L21/48
CPCH01L21/4875H01L23/3736
Inventor 傅仁利张鹏飞涂兴龙方军蒋维娜
Owner NANJING MING KUANG ELECTRONICS TECH
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