Vertical type LED structure and manufacturing method thereof

Abstract

The invention provides a vertical type LED structure and a manufacturing method of the vertical type LED structure. A Bragg reflector structure replaces a metal reflector layer in the prior art to serve as a reflector, the Bragg reflector structure is provided with an opening, it can be ensured than a contact layer and a metal bonding layer are connected, the Bragg reflector structure can improve the heat stability of the reflector and avoid metal diffusion, and therefore the yield of a vertical type LED can be improved. Furthermore, the Bragg reflector structure formed by stacking two kinds of materials in multiple layers, one of the layers has a high refractive index, the reflection efficiency can be improved, and the luminous effect of the formed vertical type LED is better.

Description

technical field [0001] The invention relates to the field of LED manufacturing, in particular to a vertical LED structure and a manufacturing method thereof. Background technique [0002] In recent years, research on high-power light-emitting diodes (Light-Emitting Diode, LED) has become a trend. However, LED chips with the same side structure have disadvantages such as current crowding, high voltage, and difficulty in heat dissipation, making it difficult to meet high-power requirements. The vertical LED chip can not only effectively solve the crowding effect under high current injection, but also alleviate the reduction of internal quantum efficiency caused by high current injection, and improve the photoelectric performance of the vertical LED chip. [0003] At present, the preparation process of vertical LED chips is mainly to grow a GaN epitaxial layer on a substrate (usually sapphire material), make a contact layer and a metal mirror layer on the GaN-based epitaxial la...

AI Technical Summary

Problems solved by technology

[0005] However, the conventional metal mirror layer 40 has problems such as poor thermal stability and easy diffusion. In the LED chip manufacturing process, especially in the high-temperature annealing process, metal clusters or diffusion are often caused, and metal clusters will cause metal mirrors The reflectivity of layer 40 is reduced and a high-resistance state is formed locally on the electrode of the LED chip, so that the brightness of the LED chip is reduced or the voltage is increased, and the light efficiency of the overall LED chip is reduced.

The spread of metal causes the metal to climb to the side wall of the P / N junction, causing the LED chip to easily leak electricity, which will affect the service life of the LED chip

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