Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Organic light-emitting diode and preparation method thereof

An electroluminescence device and electroluminescence technology, which are applied in the directions of organic semiconductor devices, materials of organic semiconductor devices, and electric solid devices, etc., to achieve the effect of improving light transmittance, improving flexibility, and reducing the influence of light efficiency.

Inactive Publication Date: 2014-10-01
OCEANS KING LIGHTING SCI&TECH CO LTD +2
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The method of the invention is especially suitable for encapsulating flexible organic electroluminescent devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic light-emitting diode and preparation method thereof
  • Organic light-emitting diode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] A method for preparing an organic electroluminescent device, comprising the following steps:

[0054] (1) Pre-treatment of ITO glass substrate 1: put ITO conductive glass substrate 1 into acetone, ethanol, deionized water, and ethanol in sequence, ultrasonically clean them for 5 minutes, then blow dry with nitrogen, and dry them in an oven for later use; The cleaned ITO glass substrate 1 is subjected to surface activation treatment to increase the oxygen content of the conductive surface layer and improve the work function of the conductive layer surface; the thickness of the ITO glass substrate 1 is 100nm;

[0055] (2) Preparation of luminescent functional layer 2:

[0056] Hole injection layer 21: MoO is evaporated on the ITO glass substrate 1 3 Hybrid material obtained by doping NPB, MoO 3 The doping mass fraction is 30%, and the evaporation is carried out by high-vacuum coating equipment, and the vacuum degree during evaporation is 1×10 -5 Pa, the evaporation rat...

Embodiment 2

[0073] A method for preparing an organic electroluminescent device, comprising the following steps:

[0074] (1), (2), (3) are the same as embodiment 1;

[0075] (4) Preparation of encapsulation layer:

[0076] (a) Preparation of the first organic barrier layer: TAPC was vacuum-evaporated on the cathode layer to obtain a first organic barrier layer with a thickness of 200 nm and a vacuum degree of 1×10 -5 Pa, the evaporation rate is

[0077] (b) Preparation of the second organic barrier layer: Bphen was vacuum evaporated on the first organic barrier layer to obtain a second organic barrier layer with a thickness of 200 nm and a vacuum degree of 1×10 -5 Pa, the evaporation rate is

[0078] (c) Preparation of the first inorganic barrier layer: a first inorganic barrier layer with a thickness of 100 nm was prepared on the second organic barrier layer by magnetron sputtering, and the material of the first inorganic barrier layer was TiO 2 , the background vacuum is 1×10 -5 ...

Embodiment 3

[0086] A method for preparing an organic electroluminescent device, comprising the following steps:

[0087] (1), (2), (3) are the same as embodiment 1;

[0088] (4) Preparation of encapsulation layer:

[0089] (a) Preparation of the first organic barrier layer: NPB was vacuum-evaporated on the cathode layer to obtain a first organic barrier layer with a thickness of 300 nm, and the vacuum degree was 1×10 -4 Pa, the evaporation rate is

[0090] (b) Preparation of the second organic barrier layer: BCP was vacuum evaporated on the first organic barrier layer to obtain a second organic barrier layer with a thickness of 300 nm, and the vacuum degree was 1×10 -4 Pa, the evaporation rate is

[0091] (c) Preparation of the first inorganic barrier layer: on the second organic barrier layer, a first inorganic barrier layer with a thickness of 50 nm was prepared by magnetron sputtering. The material of the first inorganic barrier layer was MgO, and the background vacuum degree wa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an organic light-emitting diode which comprises an anode conductive substrate, a light-emitting function layer, a cathode layer and a packaging layer which are laminated sequentially, wherein the packaging layer is in a composite structure formed by overlapping a packaging layer unit; and the packaging layer unit comprises a first organic barrier layer, a second organic barrier layer, a first inorganic barrier layer, a third organic barrier layer, a fourth organic barrier layer and a second inorganic barrier layer which are laminated sequentially. The invention further provides a preparation method of the organic light-emitting diode. The method can effectively reduce corrosion of water vapor and oxygen to the organic light-emitting diode, so that an organic function material and an electrode of the organic light-emitting diode are effectively protected, the light transmittance of the organic light-emitting diode is improved, and the service life of the organic light-emitting diode can be prolonged significantly. The method is particularly suitable for packaging a flexible organic light-emitting diode.

Description

technical field [0001] The invention relates to the related field of electronic devices, in particular to an organic electroluminescent device and a preparation method thereof. Background technique [0002] Organic electroluminescent device (OLED) is a current-mode semiconductor light-emitting device based on organic materials. Its typical structure is to prepare an organic luminescent material with a thickness of tens of nanometers on the ITO glass as a light-emitting layer, and a metal electrode with a low work function is placed above the light-emitting layer. When a voltage is applied to the electrodes, the light-emitting layer produces light radiation. [0003] OLED devices have the advantages of active luminescence, high luminous efficiency, low power consumption, lightness, thinness, and no viewing angle restrictions. They are considered by industry insiders to be the new generation of devices that are most likely to occupy a dominant position in the future lighting ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/52H01L51/54H01L51/56
CPCH10K50/8445H10K2102/00H10K71/00
Inventor 周明杰钟铁涛王平张娟娟
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com