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A kind of preparation method of cubic silicon carbide film

A cubic silicon carbide and thin film technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems that cannot be eliminated and affect the promotion of silicon carbide thin films and related devices, so as to reduce energy consumption, The effect of reducing crystal defects and fast deposition rate

Active Publication Date: 2017-02-15
武汉拓材科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the defects in the (111) plane of the 3C-SiC film grains prepared by general chemical vapor deposition (CVD) are perpendicular to the growth direction of the film and cannot be eliminated, which affects the promotion of the application of silicon carbide films and related devices.

Method used

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  • A kind of preparation method of cubic silicon carbide film
  • A kind of preparation method of cubic silicon carbide film
  • A kind of preparation method of cubic silicon carbide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] A method for preparing cubic silicon carbide film includes the following steps:

[0027] (1) Put the single crystal silicon substrate on the substrate base of the cold-wall laser chemical vapor deposition reactor, and adjust the vacuum to below 10Pa, and set the heating system in the reactor to raise the temperature of the substrate base to 300℃ ;

[0028] (2) Pass the carrier gas Ar containing hexamethyldisilane (HMDS) into the reactor, the flow rate of HMDS is 3sccm, and the vacuum degree in the reactor is 10000Pa by adjusting the vacuum pump exhaust valve;

[0029] (3) Load a continuous laser to irradiate the surface of the silicon substrate with a wavelength of 808 nanometers, adjust the laser power to 80W, and load the laser for 10 minutes;

[0030] (4) Stop passing the Ar gas containing HMDS, turn off the laser and the heating system in the reactor, apply a vacuum, adjust the vacuum in the reactor to below 10 Pa, and cool to room temperature naturally, to obtain the singl...

Embodiment 2

[0036] A method for preparing cubic silicon carbide film includes the following steps:

[0037] (1) Put the single crystal silicon substrate on the substrate base of the cold-wall laser chemical vapor deposition reactor, and adjust the vacuum to below 10 Pa, and set the heating system in the reactor to raise the temperature of the substrate base to 600°C ;

[0038] (2) Pass the carrier gas Ar containing hexamethyldisilane (HMDS) into the reactor, the flow rate of HMDS is 10 sccm, and the vacuum degree in the reactor is adjusted to 1000 Pa;

[0039] (3) Load a continuous laser to irradiate the surface of the silicon substrate with a wavelength of 1080 nanometers, adjust the laser power to 20W, and load the laser for 3 minutes;

[0040] (4) Stop access to H containing HMDS 2 , Turn off the laser and the heating system in the reactor, draw a vacuum, adjust the vacuum in the reactor to below 10 Pa, and cool it naturally to room temperature to obtain a cubic silicon carbide film deposited ...

Embodiment 3

[0043] A method for preparing cubic silicon carbide film includes the following steps:

[0044] (1) Put the monocrystalline silicon substrate on the substrate base of the cold-wall laser chemical vapor deposition reactor, and adjust the vacuum to below 10 Pa, and set the heating system in the reactor to increase the temperature of the substrate base to 900°C ;

[0045] (2) The carrier gas H containing hexamethyldisilane (HMDS) 2 Into the reactor, the flow rate of HMDS is 18sccm, and the vacuum degree in the reactor is adjusted to 100Pa;

[0046] (3) Load the continuous laser to irradiate the surface of the silicon substrate, the laser wavelength is 1080 nanometers, the laser power is adjusted to 150W, and the laser loading time is 1 minute;

[0047] (4) Stop passing the carrier gas H containing HMDS 2 , Turn off the laser and the heating system in the reactor, draw a vacuum, adjust the vacuum in the reactor to below 10 Pa, and cool to room temperature naturally to obtain a cubic silic...

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Abstract

The invention discloses a preparation method of a cubic silicon carbide film. The preparation method comprises the following steps of (1) placing a monocrystalline silicon substrate on a substrate seat of a cold-wall type laser induced chemical vapor deposition device, vacuumizing, and heating the substrate seat to 100-900 DEG C; (2) introducing HMDS-containing carrier gas to a reactor and regulating the vacuum degree to 10-10000Pa, wherein the flux of HMDS is 1-20sccm; (3) loading continuous laser to irradiate the surface of the silicon substrate at the wavelength of 750-1150nm and the power of 10-150W for 1-10min; (4) stopping the introduction of the HMDS-containing carrier gas, closing the laser, stopping heating, vacuumizing, and naturally cooling to room temperature to obtain the cubic silicon carbide film. A planar defect of the cubic silicon carbide film prepared by the invention trends to grow towards the growth direction of the film, and the self-disappearance phenomenon can be generated when adjacent defects meet, so that crystal defects in the material are effectively reduced.

Description

Technical field [0001] The invention relates to a method for preparing a cubic silicon carbide film that reduces crystal defects, and belongs to the field of inorganic material structure control. Background technique [0002] Silicon carbide has a large forbidden band width, high breakdown voltage, and is suitable for applications in high temperature, high power, high frequency and extreme radiation environments. It is an ideal material for the development of high frequency, high temperature resistant and radiation resistant semiconductor microelectronic devices and circuits. Important third-generation semiconductor material. [0003] Silicon carbide has a variety of homogeneous polycrystals. In the direction perpendicular to the c-axis, according to the order of atomic stacking, silicon carbide can be divided into more than 200 different polytypes. Since the melting point of cubic silicon carbide (3C-SiC) is lower than that of silicon (the melting point of silicon is 1420°C), 3C-...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/32C23C16/48
Inventor 章嵩徐青芳涂溶张联盟
Owner 武汉拓材科技有限公司