Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

InP-based intermediate infrared InAsBi quantum well structure

A quantum well and infrared technology, applied in phonon exciters, laser parts, electrical components, etc., can solve the problem that the light emission wavelength is difficult to break through 3 microns, and achieve high electro-optical conversion efficiency, excellent substrate quality, and threshold current low effect

Inactive Publication Date: 2014-10-15
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, heterogeneous quantum well lasers have high requirements for material growth, and quantum well lasers using InAs materials as potential wells are limited by the forbidden band width (0.35eV) of InAs materials, and the emission wavelength is difficult to break through 3 microns

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • InP-based intermediate infrared InAsBi quantum well structure
  • InP-based intermediate infrared InAsBi quantum well structure
  • InP-based intermediate infrared InAsBi quantum well structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] To prepare InAs with an InP-based emission wavelength of 3.1 microns 0.95 Bi 0.05 Double quantum well as an example:

[0020] (1) To grow InAs on an InP substrate 0.95 Bi 0.05 Double quantum well structure, first grow a 100nm InP buffer layer;

[0021] (2) grow a layer of 20nm thick In 0.4 Ga 0.6 As material as a barrier layer;

[0022] (3) Grow a layer of InAs with a thickness of 5nm 0.95 Bi 0.05 material as a potential well layer;

[0023] (4) Grow a layer of In with a thickness of 20nm again 0.4 Ga 0.6 As material as a barrier layer;

[0024] (5) A layer of InAs with a thickness of 5nm is grown again 0.95 Bi 0.05 material as a potential well layer for the second quantum well;

[0025] (6) Finally grow a layer of In with a thickness of 20nm 0.4 Ga 0.6 The As material is used as a barrier layer to complete the growth of the double quantum well structure, and the quantum well emits light at room temperature with a wavelength of about 3.1 microns.

Embodiment 2

[0027] To prepare InAs with an InP-based emission wavelength of 3.0 microns 0.94 Bi 0.06 Three quantum wells as an example:

[0028] (1) To grow InAs on an InP substrate 0.94 Bi 0.06 Three quantum well structure, first grow a 100nm InP buffer layer;

[0029] (2) grow a layer of 15nm thick In 0.53 Ga 0.47 As material as a barrier layer;

[0030] (3) grow a layer of 4nm thick InAs 0.94 Bi 0.06 material as a potential well layer;

[0031] (4) grow a layer of 15nm thick In again 0.53 Ga 0.47 As material as a barrier layer;

[0032] (5) The above-mentioned (3) and (4) processes are repeated twice in a cycle, that is, the growth of the three-quantum well structure is completed, and the emission wavelength of the quantum wells at room temperature is about 3.0 microns.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an InP-based intermediate infrared InAsBi quantum well structure. InAsBi serves as a potential well layer of the quantum well structure, and In0.53Ga0.47As matched with InP or InxGa1-xAs (x is greater than 0 and less than 0.53) with a lattice constant less than that of InP serves as a barrier layer of the quantum well structure. An InP substrate adopted by the quantum well structure has excellent substrate quality compared with a GaSb substrate, so that the preparation cost of a device can be lowered; a quantum well adopts InAsBi as the potential well layer, so that middle infrared band light emitting can be achieved due to a narrow band gap; and compared with a quantum cascade laser prepared by utilizing sub-interband transition, a semiconductor light source prepared by utilizing quantum well interband transition has the advantages of low threshold current and high electro-optical conversion efficiency.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic materials, in particular to an InP-based mid-infrared InAsBi quantum well structure. Background technique [0002] The mid-infrared band contains many important molecular fundamental frequency characteristic lines, and has very small atmospheric light absorption characteristics. Lasers and light-emitting diodes and other light sources in the mid-infrared band have very important application prospects in civilian and military fields, such as civilian environments. Monitoring, chemical detection and medical diagnosis, as well as laser radar, collision avoidance and target recognition in the military field. Semiconductor lasers made of semiconductor materials have received particular attention due to their high efficiency, small size, and light weight. There are three main ways to realize mid-infrared semiconductor lasers: type I quantum well laser, interband cascade laser (Interband Casc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/343
Inventor 顾溢张永刚王庶民
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com