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P type FeNbTiSb thermoelectric material with high optimal value and preparation method thereof

A technology of thermoelectric materials and raw materials, applied in the direction of thermoelectric device lead-out wire materials, thermoelectric device manufacturing/processing, etc., can solve the problems of few researches on thermoelectric materials, and achieve abundant reserves, high production efficiency and short production cycle Effect

Active Publication Date: 2014-10-29
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, there is little research on such thermoelectric materials.

Method used

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  • P type FeNbTiSb thermoelectric material with high optimal value and preparation method thereof
  • P type FeNbTiSb thermoelectric material with high optimal value and preparation method thereof
  • P type FeNbTiSb thermoelectric material with high optimal value and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Raw materials were stoichiometrically compared to FeNb 0.8 Ti 0.2 After Sb is calculated and weighed, it is placed in a copper tube protected by Ar gas, and the high-frequency melting method is used to repeatedly smelt the ingot for 3 times to obtain an ingot, and then the ingot is crushed by a mechanical ball milling method to obtain submicron particles, followed by spark plasma sintering Methods The final samples were obtained by sintering at 850°C and 65MPa for 10 minutes.

[0031] Adopt RigakuD / MAX-2550PC type X-ray polycrystal diffractometer (XRD) to carry out phase analysis to the sample that present embodiment makes, as figure 1 Shown, and confirmed as the FeNbSb-based structure, that is, the cubic structure (F43m), the space group number is 216.

[0032] According to the thermal diffusivity measured by Netzsch LFA-457 laser pulse thermal analyzer, the specific heat measured by Netzsch DSC-404 differential specific heat meter and the density of the material, th...

Embodiment 2

[0037] Raw materials were stoichiometrically compared to FeNb 0.76 Ti 0.24 After Sb is calculated and weighed, it is placed in a copper tube protected by Ar gas, and the high-frequency melting method is used to repeatedly smelt the ingot for 3 times to obtain an ingot, and then the ingot is crushed by a mechanical ball milling method to obtain submicron particles, followed by spark plasma sintering Methods The final samples were obtained by sintering at 850°C and 65MPa for 10 minutes.

[0038] The thermal conductivity of the sample prepared in this embodiment is κ=4.6W·m at 1100K -1 K -1 .

[0039] The thermoelectric potential coefficient of the material at 1100K was measured by Linses LSR-3 equipment α=198μV / K, and the conductivity σ=11.3×10 4 S / m.

[0040] According to the above measured value according to zT=(α 2 σT / κ), the zT value of the sample prepared in this embodiment is about 1.06 at 1100K.

Embodiment 3

[0042] Raw materials were stoichiometrically compared to FeNb 0.84 Ti 0.16 After Sb is calculated and weighed, it is placed in a copper tube protected by Ar gas, and the high-frequency melting method is used to repeatedly smelt the ingot for 3 times to obtain an ingot, and then the ingot is crushed by a mechanical ball milling method to obtain submicron particles, followed by spark plasma sintering Methods The final samples were obtained by sintering at 850°C and 65MPa for 10 minutes.

[0043] The thermal conductivity of the sample prepared in this embodiment is κ=4.8W·m at 1100K -1 K -1 .

[0044] The thermoelectric potential coefficient of the material at 1100K was measured by Linses LSR-3 equipment α=219μV / K, and the conductivity σ=8.6×10 4 S / m.

[0045] According to the above measured value according to zT=(α 2σT / κ), the zT value of the sample prepared in this embodiment is about 0.96 at 1100K.

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Abstract

The invention discloses a P type FeNbTiSb thermoelectric material with a high optimal value; the P type FeNbTiSb thermoelectric material is made of FeNb(1-x)TixSb, wherein x is equal to 0.06-0.24. The invention also discloses a preparation method for the P type FeNbTiSb thermoelectric material. The preparation method comprises the steps of: weighing raw materials including iron, niobium, titanium and stibium according to chemical dosages of the FeNb(1-x)TixSb, under the protection of argon, smelting to obtain cast ingots; smashing the cast ingots into participles, sintering and thereby obtaining the P type FeNbTiSb thermoelectric material. The preparation method provided by the invention is simple in process, short in production cycle and high in production efficiency; the prepared FeNb(1-x)TixSb thermoelectric material is good in stability at high temperatures, abundant in contents of elements, constituting the material, in the earth crust, and low in industrialized cost; the maximal zT value reaches 1.1 at 1100K, which is the present highest performance in a Half-Heusler system.

Description

technical field [0001] The invention relates to the field of semiconductor thermoelectric materials, in particular to a high-quality P-type FeNbTiSb thermoelectric material and a preparation method thereof. Background technique [0002] A thermoelectric material is a semiconductor material that directly converts electrical energy and thermal energy through the movement of carriers (electrons or holes) inside the material. When there is a temperature difference between the two ends of the thermoelectric material, the thermoelectric material can convert heat energy into electrical energy output, which is called the Seebeck effect; and after an electric field is applied to both ends of the thermoelectric material, the thermoelectric material can convert electrical energy into heat energy, and one end releases heat. The heat absorption at the other end is called the Petier effect. These two effects respectively enable thermoelectric materials to have a wide range of application ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/18H01L35/34H10N10/853H10N10/01
Inventor 朱铁军付晨光赵新兵
Owner ZHEJIANG UNIV
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