Multi-layer flexible plane embedded laminated electrode, preparation method of electrode, and application of electrode in organic single crystal field effect transistor

Abstract

The invention discloses a flexible plane embedded laminated electrode, a preparation method of the electrode, and an application of the electrode in an organic single crystal field effect transistor. The preparation method comprises the following steps of connecting octadecyl trichlorosilane on the surface of a substrate, preparing a source electrode, a drain electrode and a grid electrode on the modified substrate, connecting mercapto propyl trimethoxy silane on metal electrode surfaces of the source electrode, the drain electrode and the grid electrode by a vapor phase method, spincoating polydimethylsiloxane on the metal electrode surfaces of the obtained source electrode, the drain electrode and the grid electrode, transferring the grid electrode spincoated with polydimethylsiloxane from the substrate, performing oxygen plasma treatment on the metal electrode surface of the grid electrode and polydimethylsiloxane surfaces of the source electrode and the drain electrode, forming hydroxy on the surfaces, cutting the source electrode and the drain electrode, and connecting the grid electrode, the source electrode and the drain electrode to form a whole. According to the flexible plane embedded laminated electrode, the preparation method and the application, a semiconductor, the electrode and an insulating layer are bonded together by action of electrostatic adsorption, so that recycling of the electrode can be achieved, and the electrode is suitable for organic single crystals in various dimensions.

Description

technical field [0001] The invention relates to a multi-layer flexible plane embedded lamination electrode, a preparation method thereof and an application in an organic field single crystal field effect transistor, belonging to the field of organic electronics. Background technique [0002] Since the first organic field-effect transistor was invented in 1986 (Applied Physics Letters 1986, 49, 1210), it has been characterized by its simple preparation process, wide range of material sources, low cost and good compatibility with flexible substrates (Nature 2004, 428, 911; Advanced Materials 2005, 17, 1705; Journal of Materials Chemistry 2005, 15, 53; Advanced Materials 2005, 17, 2411), making organic field-effect transistors prepared based on organic semiconductor materials attract the attention of researchers and develop rapidly. According to the shape of the organic semiconductor layer, organic field effect transistors can be divided into organic thin film field effect tran...

AI Technical Summary

Problems solved by technology

But these two methods have a disadvantage, the electrode structures they prepare are such as figure 1 As shown, the source / drain electrodes protrude from the surface of the insulating layer

This structure is more suitable for larger size crystals and wider channel lengths, which also limits the size of crystals used and the miniaturization of devices

Because when the organic micro / nano semiconductor is transferred to this structure electrode, such as figure 2 As shown in the figure, due to the protruding structure of the electrodes, the organic semiconductor cannot be completely bonded to the insulating layer, and air gaps are easily formed near the electrodes.

This will lead to uneven conduction channel of the device and affect the performance of the device.

Images