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Oxynitride phosphor powder

An oxynitride, phosphor technology, applied in the direction of luminescent materials, semiconductor devices, chemical instruments and methods, etc., can solve the problem that the luminous intensity cannot be determined

Inactive Publication Date: 2016-08-24
UBE IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] However, only the luminous intensity of the peak is specifically disclosed in this document, and since the luminous intensity of the peak may vary depending on the measurement device and measurement conditions, it cannot be confirmed whether a practical luminous intensity can be obtained.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0138] Silicon nitride, europium nitride, aluminum nitride, and calcium nitride were weighed in a nitrogen-purged glove box so as to become the design composition of the oxynitride compound in Table 1, and mixed using a dry vibrating mill to obtain a mixed powder. The specific surface area and average particle size of silicon nitride powder are 0.3m 2 / g and 8.0 μm. Put the obtained mixed powder into a crucible made of silicon nitride, put it in a graphite resistance heating electric furnace, and keep the normal pressure while circulating nitrogen in the electric furnace (oxygen concentration is less than 0.01vol%) , the temperature was raised to 1725°C, and then kept at 1725°C for 12 hours to obtain an oxynitride fired product.

[0139] Decompose and pulverize the oxynitride roasted product, and obtain powder with a particle size of 5-20 μm by classification, then put the obtained powder into an alumina crucible, and then put it into a graphite resistance heating electric f...

Embodiment 2~10

[0145] An oxynitride phosphor powder was obtained in the same manner as in Example 1, except that the raw material powders of Examples 2 to 10 were weighed and mixed so that the oxynitride phosphor powder had the design composition shown in Table 1. The fluorescent properties, average particle size, specific surface area, formed crystal phase and content, and lattice constant of the obtained oxynitride phosphor powder were measured by the same method as in Example 1. The results are described in Table 1 and Table 2. in addition, figure 2 and image 3 The powder X-ray diffraction patterns of Example 2 and Example 4 are shown in . Depend on figure 2 It can be seen that the generated crystal phases are α-Sialon phase and aluminum nitride phase. Additionally, by image 3 It can be seen that the generated crystal phases are α-Sialon phase, aluminum nitride phase and aluminum oxynitride phase (Al 2.81 o 3.56 N 0.44 ).

[0146] As can be seen from Table 1, as in Examples 3...

Embodiment 11、12

[0149] In addition to setting the specific surface area and average particle size of the silicon nitride powder used as a raw material to 2.5m 2 / g, 1.5μm and 10.0m 2 / g and 0.2 μm, an oxynitride phosphor powder was obtained in the same manner as in Example 3. The fluorescent properties, average particle size, specific surface area, formed crystal phase and content, and lattice constant of the obtained oxynitride phosphor powder were measured by the same method as in Example 1. The results are described in Table 1 and Table 2. It can be seen that the specific surface area and average particle size of the oxynitride phosphor powder are 0.99m 2 / g, 9.7μm Example 12, the specific surface area of ​​the oxynitride phosphor powder is 0.2 ~ 0.6m 2 / g, and the external quantum efficiencies of Examples 3 and 11 with an average particle diameter of 10.0 to 20.0 μm increased.

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Abstract

The present invention provides an oxynitride phosphor having a fluorescence peak wavelength of 580-605 nm and higher external quantum efficiency than before. The oxynitride phosphor powder of the present invention is an oxynitride phosphor represented by the following composition formula and containing α-sialon and aluminum nitride. The present invention also provides a method for producing the above-mentioned oxynitride phosphor. Cax1Eux2Si12‑(y+z)Al(y+z)OzN16‑z (where x1, x2, y, z are 0<x1≤2.50, 0.01≤x2≤0.20, 0<y≤2.3 and 1.5≤z≤ 3.5, or, x1, x2, y, z are 0<x1≤2.70, 0.05≤x2≤0.20, 2.3≤y≤5.5, and 1≤z≤2.5).

Description

technical field [0001] The invention relates to an oxynitride phosphor powder containing α-sialon and aluminum nitride, which is suitable for ultraviolet to blue light sources and is activated by rare earth metal elements. Specifically, it relates to an oxynitride phosphor powder having a fluorescence peak wavelength in the range of 580 to 605 nm and exhibiting practical external quantum efficiency and fluorescence intensity. Background technique [0002] In recent years, due to the practical use of blue light-emitting diodes (LEDs), efforts have been made to develop white LEDs utilizing the blue LEDs. Compared with conventional white light sources, white LEDs consume less power and have a longer lifespan. Therefore, they are being used as backlights for liquid crystal panels, indoor and outdoor lighting equipment, and the like. [0003] In the currently developed white LED, Ce-doped YAG (yttrium·aluminum·garnet) is coated on the surface of the blue LED. However, when the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/64C09K11/08
CPCH01L33/502Y10T428/2982C09K11/77348C09K11/08C09K11/64
Inventor 上田孝之藤永昌孝酒井拓马治田慎辅
Owner UBE IND LTD