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Technology for manufacturing fast recovery diode

A recovery diode and manufacturing process technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as difficult implementation, far-reaching mature technology, and lack of nuclear radiation in microelectronics factories, so as to achieve a good recovery diode device Effect

Active Publication Date: 2014-11-19
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, such a solution is far from the mature technology in the field of microelectronic device manufacturing, and microelectronic factories usually do not have the conditions for nuclear radiation, so it is difficult to implement; on the other hand, although the position of metal impurities can be determined by the position of defects , but how to control the defect position itself becomes a problem

Method used

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  • Technology for manufacturing fast recovery diode

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Embodiment 1

[0043] Take an N-doped silicon substrate wafer; carry out ion implantation, first ion implantation of protons (hydrogen ions), introduce defect regions into the depth of the substrate sheet about 1.2-1.5 μm, then ion implantation of boron ions, in the substrate Introduce P-type doping at about 0-0.5 μm on the shallower surface of the bottom; perform laser annealing of the implanted boron element, and use a 532nm laser beam for laser annealing. While annealing the area within 1 μm depth on the wafer surface, it does not touch the deeper proton implantation damage area, so the basic structure of the PN junction is formed after laser annealing, and a defect damage area is maintained in the body; Platinum treatment, the platinum diffusion temperature is 750°C, 15-20 minutes under the nitrogen atmosphere, due to the effect of diffusion and gettering in the defect area, the introduced platinum atoms will gather more in the depth range of 1.2-1.5μm; Electrode fabrication, passivation...

Embodiment 2

[0046]Take a P-doped silicon substrate wafer; first, high-energy ions are implanted with boron ions, and defect regions are introduced into the depth of the substrate about 1.0-1.2 μm, and then ions are implanted with phosphorous ions, about 0 on the shallower surface of the substrate. Introduce N-type doping at -0.3μm; perform laser annealing of the injected phosphorus element, laser annealing is carried out with a 532nm laser beam, because the penetration depth of the laser at this wavelength into the silicon wafer is limited, combined with the action energy and action time Therefore, while annealing the area within 1 μm depth on the wafer surface, it does not touch the deeper boron ion implantation damage area, so the N+P-junction basic structure is formed after laser annealing, and a defect is maintained in the body Damaged area: For the treatment of platinum expansion on the substrate, the platinum diffusion temperature is 750°C, and it is under nitrogen atmosphere for 15-...

Embodiment 3

[0049] Take an N-doped silicon substrate wafer; perform ion implantation of boron ions, introduce P-type doping at about 0-0.3 μm on the shallower surface of the substrate; perform platinum metal sputtering on the surface of the silicon wafer to form about 5 -10nm platinum metal layer; laser annealing, laser annealing is carried out with a 532nm green laser to activate the boron ions on the shallower surface; at the same time, when the laser transmits energy to the metal platinum on the surface of the substrate, it will drive the boron ions on the surface Platinum moves deep into the silicon wafer, and on the other side, due to the limited depth of laser penetration into the silicon wafer, after platinum atoms move to a certain depth in the silicon wafer, they will slowly stop their movement because they cannot continue to receive the energy delivered by the laser. And stay at a specific depth; after that, process steps such as electrode fabrication, passivation, lead packaging...

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Abstract

The invention discloses a technology for manufacturing a fast recovery diode. By means of the technology, the reverse recovery time of a device can be further shortened, and the working speed of a related circuit can be increased; the deep control capacity of the ion injection and the deep control capacity of the laser annealing are integrally applied, the optimal minority-carrier service life shortening effect is achieved through diffusion introduction of minority-carrier recombination centers and the gettering effect of a defect area and a damage area on the minority-carrier recombination centers, technological routes are reasonable, the technological process is easy to control, and the manufactured fast recovery diode has the better performance that the reverse recovery time is further shortened.

Description

technical field [0001] The invention relates to the technical field of processing and manufacturing diode electronic devices, in particular to a fast recovery diode manufacturing process method. Background technique [0002] Fast recovery diodes are used in power electronic circuits, and are generally connected in anti-parallel with coils, switching devices, etc., and play a protective role for the core power switching devices. For fast recovery diodes, the reverse recovery time is short, the characteristics are soft, the reverse leakage is small, and the forward voltage drop is small. Traditionally, there are two ways to reduce the minority carrier lifetime. One is to introduce a certain amount of defects into the device, and the other is to introduce metal impurities that act as recombination centers into the device. The former is due to the impact on the withstand voltage of the diode device. It has a certain impact on leakage, so technologies like platinum expansion are...

Claims

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Application Information

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IPC IPC(8): H01L21/329H01L21/265
CPCH01L21/265H01L21/324H01L29/66143
Inventor 严利人张伟刘道广刘志弘
Owner TSINGHUA UNIV
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