Three-phase inversion composite busbar suitable for half-bridge module

A three-phase inverter and composite busbar technology, which is applied in the direction of output power conversion device, AC power input conversion to DC power output, electrical components, etc., can solve the problem of large stray inductance of main circuit cables and copper bars, main circuit There are many cable connections, power devices are easily damaged, etc., to achieve the effect of simple layout, reduced volume and weight, and reduced peak voltage

Active Publication Date: 2014-11-26
CRRC YONGJI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention is a three-phase inverter composite busbar suitable for half-bridge modules, which mainly solves the following problems: 1) solves the problems of many main circuit cables and copper bars, complex layout and unreliable quality ;2

Method used

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  • Three-phase inversion composite busbar suitable for half-bridge module
  • Three-phase inversion composite busbar suitable for half-bridge module

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Embodiment Construction

[0024] The present invention will be further described below in conjunction with accompanying drawing:

[0025] Such as figure 1 As shown, a three-phase inverter composite busbar suitable for half-bridge modules includes three flat busbars stacked together. The three busbars are positive busbar 1, Negative busbar 2 and M busbar 3, with high dielectric strength materials between adjacent busbars, such as high-voltage insulating polyester film; the right side of positive busbar 1, negative busbar 2 and M busbar 3 There is a discharge resistor connection part 4 on each side, and three discharge resistor connection parts 4 are arranged staggered up and down; the left side of the positive busbar 1 and the negative busbar 2 is respectively provided with an input terminal connection part 5, two The input terminal connection part 5 is arranged staggered up and down; three IGBT connection parts 6 are respectively provided on the bottom edge of the positive bus bar 1 and the negative ...

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Abstract

The invention discloses a three-phase inversion composite busbar suitable for a half-bridge module. The three-phase inversion composite busbar comprises three flat busbar bodies which are stacked together. The three busbar bodies comprise the positive busbar body, the negative busbar body and the M busbar body in sequence from back to front. A high-insulating-strength material is arranged between every two adjacent busbar bodies. The busbar bodies are provided with discharge resistor connection portions, input end connection portions, IGBT connection portions, absorption capacitor connection portions and supporting capacitor terminals, wherein the discharge resistor connection portions, the input end connection portions, the IGBT connection portions, the absorption capacitor connection portions and the supporting capacitor terminals are used for being connected with direct current input ends or circuit devices. The three-phase inversion composite busbar effectively decreases the loop inductance, lowers the peak voltage generated when overvoltage occurs, improve the work reliability of an IGBT, makes a main circuit convenient to connect and maintain, simple in layout and more reliable in quality, decreases the size and the weight of a system and meets the development requirements for heavy load and high density of haulage motors. The parasitic inductance of the three-phase inversion composite busbar can be smaller than 50 nH, and the three-phase inversion composite busbar can insulate and resist 3500 V voltage of an alternating current.

Description

technical field [0001] The invention relates to the technical field of power electronics technology and application devices, in particular to a three-phase inverter composite busbar suitable for half-bridge modules. Background technique [0002] Today, with the development of high-frequency power electronic technology and application devices, the parasitic parameters in the system, especially the connecting wires, generate huge electrical stress, which has become an important factor that threatens the reliability of power electronic devices. During the switching process of the power device of the high-power variable frequency power supply, due to the influence of the parasitic inductance on the DC bus between the DC energy storage capacitor and the IGBT device and the inductance of the IGBT module itself, a high peak voltage will be generated. This peak voltage , will cause the device to overheat, and sometimes even cause the IGBT to lose control and exceed the rated safe wo...

Claims

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Application Information

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IPC IPC(8): H02M7/00H02M7/5387H02M1/14H02M1/32
Inventor 尹梅陈宏刘革莉牛勇冷丽英
Owner CRRC YONGJI ELECTRIC CO LTD
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