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A kind of integrated circuit and its manufacturing method

A technology of integrated circuits and manufacturing methods, applied in the fields of circuits, manufacturing microstructure devices, semiconductor/solid-state device manufacturing, etc., can solve the problems of high process complexity, large module size, low signal-to-noise ratio, etc., and achieve high signal-to-noise ratio , small device size, and high signal-to-noise ratio

Active Publication Date: 2017-09-01
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the existing radio frequency front-end module (RF FEM) has the disadvantages of large module size, low signal-to-noise ratio (SNR), high power consumption, etc.
In addition, the method of manufacturing RF front-end modules (i.e., system-in-package method) often has disadvantages such as high process complexity and high cost

Method used

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  • A kind of integrated circuit and its manufacturing method
  • A kind of integrated circuit and its manufacturing method
  • A kind of integrated circuit and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] Below, refer to Figure 1A and Figure 1B The structure of the integrated circuit proposed by the embodiment of the present invention will be described. in, Figure 1A is a schematic cross-sectional view of the structure of an integrated circuit according to an embodiment of the present invention, Figure 1B It is another schematic cross-sectional view of the structure of an integrated circuit according to Embodiment 1 of the present invention.

[0064] This embodiment provides an integrated circuit, which can be used as a radio frequency front-end module (RFFEM) of a communication device such as a mobile phone. Such as Figure 1A As shown, the integrated circuit of this embodiment includes: a first semiconductor substrate 100, a first bulk dielectric layer 1001 located on the first semiconductor substrate 100, and a first group located in the first region of the first semiconductor substrate 100 The transistor 1102 , the second group of transistors 1202 located in th...

Embodiment 2

[0080] Below, refer to Figure 2A-Figure 2J as well as image 3 , Figure 4 The detailed steps of an exemplary method of the integrated circuit manufacturing method proposed by the embodiment of the present invention will be described. in, Figures 2A to 2J It is a schematic cross-sectional view of graphics formed in the relevant steps of a manufacturing method of an integrated circuit according to an embodiment of the present invention; image 3 It is a schematic flowchart of a manufacturing method of an integrated circuit according to an embodiment of the present invention; Figure 4 It is another schematic flowchart of a manufacturing method of an integrated circuit according to an embodiment of the present invention.

[0081] The method for manufacturing an integrated circuit according to the embodiment of the present invention is used to manufacture the integrated circuit described in Embodiment 1, and specifically includes the following steps:

[0082] Step A1: A fi...

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Abstract

The invention provides an integrated circuit and a manufacturing method thereof, and relates to the technical field of semiconductors. According to the integrated circuit, a first set of transistors with different side walls, a second set of transistors with different side walls, a third set of transistors with different side walls, an integrated passive device, MEMS devices and other components are integrated to one chip through the wafer processing flow, and compared with an existing radio frequency front-end module manufactured through the system integration packaging technology, the integrated circuit is higher in signal to noise ratio, lower in power consumption, smaller in device size and lower in cost. The manufacturing method of the integrated circuit is used for manufacturing the integrated circuit, and besides the advantages of the manufactured integrated circuit, the packaging complexity and manufacturing cost of a final radio frequency front-end module can be lowered.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an integrated circuit and a manufacturing method thereof. Background technique [0002] In the field of semiconductor technology, a radio frequency front-end module (RF FEM for short) is a key component in wireless communication devices (such as mobile phones, tablet computers, etc.). In the prior art, a radio frequency front-end module (RF FEM) is usually implemented by multiple different chips through a system-in-package (SiP). Generally speaking, a radio frequency front-end module (RF FEM) usually includes a power amplifier core (Power amplifier core), a power amplifier controller (PAcontroller), a tuner (Tuners), a radio frequency switch (RFswitch), a filter (Filters), a duplex Different chips such as Duplexer and other chips including envelope tracking chips. Among them, the power amplifier core usually uses gallium arsenide (GaAs) chip or high voltage (HV) and powe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/06H01L21/822H01L21/762B81B7/02B81C1/00
Inventor 黄河克里夫·德劳利
Owner SEMICON MFG INT (SHANGHAI) CORP