Thin film transistor and preparation method thereof, array substrate and preparation method thereof and display device

A technology for thin film transistors and array substrates, applied in the display field, can solve the problems of low process yield, high fabrication cost of array substrates, long process time, etc., and achieve the effects of simplifying structure and manufacturing process, reducing impedance, and reducing parasitic capacitance

Active Publication Date: 2014-12-31
BOE TECH GRP CO LTD
View PDF5 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] In summary, at least seven patterning processes are required to form figure 1 The array substrate shown includes low-temperature po

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film transistor and preparation method thereof, array substrate and preparation method thereof and display device
  • Thin film transistor and preparation method thereof, array substrate and preparation method thereof and display device
  • Thin film transistor and preparation method thereof, array substrate and preparation method thereof and display device

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0079] Example 1:

[0080] This embodiment provides a thin film transistor and a method for manufacturing a corresponding thin film transistor.

[0081] Such as Figure 2A with Figure 2B As shown, the thin film transistor includes a gate 7, a source 9, a drain 10, an active layer 4 and a gate insulating layer 6, wherein the gate insulating layer 6 is disposed above the active layer 4, and the gate 7, The source electrode 9 and the drain electrode 10 are arranged in the same layer above the gate insulating layer 6, the active layer 4 and the source electrode 9 are connected by a first connecting electrode 12b, and the active layer 4 and the drain electrode 10 are connected by a second connecting electrode 12c .

[0082] It should be understood here that in the present invention, "same layer" refers to a layer structure formed by using the same film forming process to form a film layer for forming a specific pattern, and then using the same mask to form a patterning process; The pat...

Example Embodiment

[0119] Example 2

[0120] This embodiment provides an array substrate and a preparation method of the corresponding array substrate. The array substrate includes the thin film transistor in Embodiment 1.

[0121] Such as Figure 4 As shown in Example 1 Figure 3F Based on the thin film transistor shown, the array substrate of this embodiment further includes a passivation layer 11 and a pixel electrode 12. The passivation layer 11 is partially disposed above the drain 10 and formed on the side of the drain 10 close to the gate 7. The mating drain contact region 10b; the pixel electrode 12 is connected to the drain 10 by overlapping the mating drain contact region 10b and the drain contact region 4c (see Figure 5C , Figure 4 The mating source contact area 9c and the source contact area 4b, the mating drain contact area 10b and the drain contact area 4c are covered by the first connection electrode 12b and the second connection electrode 12c, respectively, so they are not shown in ...

Example Embodiment

[0156] Example 3

[0157] This embodiment provides a display device, which includes the array substrate in the second embodiment.

[0158] According to the structure of the array substrate, the display device may be a liquid crystal display device or an organic electroluminescent diode display device. That is, the display device can be any product or component with display function such as liquid crystal panel, electronic paper, OLED panel, mobile phone, tablet computer, television, monitor, notebook computer, digital photo frame, navigator, etc.

[0159] The display device is formed by using a low-temperature polysilicon array substrate, has a better display effect, and has a low manufacturing cost.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of display and in particular relates to a thin film transistor and a preparation method thereof, an array substrate and a preparation method thereof and a display device. The thin film transistor comprises a grid, a source, a drain, an active layer and a grid insulating layer, wherein the grid insulating layer is arranged above the active layer, the grid, the source and the drain are arranged on the same layer above the grid insulating layer, the active layer is connected with the source through a first connecting electrode, and the active layer is connected with the drain through a second connecting electrode. The thin film transistor and the array substrate comprising the thin film transistor can be formed by only adopting a three-time layout process, the process time is greatly shortened, the process yield is improved and the process cost is reduced.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a thin film transistor, a preparation method, an array substrate, a preparation method, and a display device. Background technique [0002] Compared with a Liquid Crystal Display (LCD for short), an Organic Light Emission Display (OLED for short) display device has advantages such as fast response, light weight, bendability, and wide viewing angle. The active matrix organic electroluminescent diode (Active Matrix OLED, referred to as AMOLED) has the advantages of small driving current and low power consumption, and is suitable for high-resolution display. [0003] Regardless of whether it is an LCD display device or an OLED display device, a thin film transistor (Thin Film Transistor, TFT for short) is disposed therein as a control switch. Thin film transistors include amorphous silicon, polysilicon, oxide semiconductor or organic thin film transistor drivers. Amon...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/786H01L27/12H01L21/336
CPCH01L27/1214H01L27/1222H01L27/1288H01L29/786H01L27/12H01L21/32139H01L29/78633H01L27/1248H01L29/78618H01L29/42384H01L29/66757H01L29/458H01L27/124H01L29/41733H01L29/78675H10K59/1213H10K59/131H10K59/1201H01L21/02532H01L21/02595H01L21/0273H01L21/26513H01L21/283H01L21/3065H01L23/3171H01L29/4908H01L29/4958
Inventor 龙春平梁逸南
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap