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Thin film transistor and preparation method thereof, array substrate and preparation method thereof and display device

A technology for thin film transistors and array substrates, applied in the display field, can solve the problems of low process yield, high fabrication cost of array substrates, long process time, etc., and achieve the effects of simplifying structure and manufacturing process, reducing impedance, and reducing parasitic capacitance

Active Publication Date: 2014-12-31
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] In summary, at least seven patterning processes are required to form figure 1 The array substrate shown includes low-temperature polysilicon thin film transistors, resulting in longer process time and lower process yield, making the array substrate more costly to prepare

Method used

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  • Thin film transistor and preparation method thereof, array substrate and preparation method thereof and display device
  • Thin film transistor and preparation method thereof, array substrate and preparation method thereof and display device
  • Thin film transistor and preparation method thereof, array substrate and preparation method thereof and display device

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Embodiment 1

[0080] This embodiment provides a thin film transistor and a corresponding manufacturing method of the thin film transistor.

[0081] Such as Figure 2A and Figure 2B As shown, the thin film transistor includes a gate 7, a source 9, a drain 10, an active layer 4 and a gate insulating layer 6, wherein the gate insulating layer 6 is arranged above the active layer 4, and the gate 7, The source 9 and the drain 10 are arranged on the same layer above the gate insulating layer 6, the active layer 4 and the source 9 are connected through the first connection electrode 12b, and the active layer 4 and the drain 10 are connected through the second connection electrode 12c .

[0082] It should be understood here that, in the present invention, "same layer" refers to the layer structure formed by using the same film-forming process to form a film layer for forming a specific pattern, and then using the same mask to form a patterning process; according to the specific pattern differen...

Embodiment 2

[0120] This embodiment provides an array substrate and a corresponding manufacturing method of the array substrate. The array substrate includes the thin film transistor in Embodiment 1.

[0121] Such as Figure 4 Shown, in Example 1 Figure 3F Based on the thin film transistor shown, the array substrate of this embodiment further includes a passivation layer 11 and a pixel electrode 12. The passivation layer 11 is partially disposed above the drain 10 and formed on the side of the drain 10 close to the gate 7 The matching drain contact region 10b; the pixel electrode 12 is connected to the drain 10 by overlapping the matching drain contact region 10b and the drain contact region 4c (see Figure 5C , Figure 4 The mating source contact region 9c and source contact region 4b, the mating drain contact region 10b and the drain contact region 4c have been respectively covered by the first connection electrode 12b and the second connection electrode 12c, so they are not specific...

Embodiment 3

[0157] This embodiment provides a display device, which includes the array substrate in Embodiment 2.

[0158] According to the structure of the array substrate, the display device may be a liquid crystal display device or an organic electroluminescent diode display device. That is, the display device can be any product or component with a display function such as a liquid crystal panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television set, a monitor, a notebook computer, a digital photo frame, a navigator, and the like.

[0159] The display device is formed by using a low-temperature polysilicon array substrate, has good display effect, and has low manufacturing cost.

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Abstract

The invention belongs to the technical field of display and in particular relates to a thin film transistor and a preparation method thereof, an array substrate and a preparation method thereof and a display device. The thin film transistor comprises a grid, a source, a drain, an active layer and a grid insulating layer, wherein the grid insulating layer is arranged above the active layer, the grid, the source and the drain are arranged on the same layer above the grid insulating layer, the active layer is connected with the source through a first connecting electrode, and the active layer is connected with the drain through a second connecting electrode. The thin film transistor and the array substrate comprising the thin film transistor can be formed by only adopting a three-time layout process, the process time is greatly shortened, the process yield is improved and the process cost is reduced.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a thin film transistor, a preparation method, an array substrate, a preparation method, and a display device. Background technique [0002] Compared with a Liquid Crystal Display (LCD for short), an Organic Light Emission Display (OLED for short) display device has advantages such as fast response, light weight, bendability, and wide viewing angle. The active matrix organic electroluminescent diode (Active Matrix OLED, referred to as AMOLED) has the advantages of small driving current and low power consumption, and is suitable for high-resolution display. [0003] Regardless of whether it is an LCD display device or an OLED display device, a thin film transistor (Thin Film Transistor, TFT for short) is disposed therein as a control switch. Thin film transistors include amorphous silicon, polysilicon, oxide semiconductor or organic thin film transistor drivers. Amon...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L27/12H01L21/336
CPCH01L27/1214H01L27/1222H01L27/1288H01L29/786H01L27/12H01L21/32139H01L29/78633H01L27/1248H01L29/78618H01L29/42384H01L29/66757H01L29/458H01L27/124H01L29/41733H01L29/78675H10K59/1213H10K59/131H10K59/1201H01L21/02532H01L21/02595H01L21/0273H01L21/26513H01L21/283H01L21/3065H01L23/3171H01L29/4908H01L29/4958
Inventor 龙春平梁逸南
Owner BOE TECH GRP CO LTD
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