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Manufacturing Process of Magnetic Sensing Device

A manufacturing process and magnetic sensing technology, applied in the manufacture/processing of electromagnetic devices, measuring devices, radiation control devices, etc., can solve problems affecting device performance, device inoperability, contact problems, etc., to improve device performance and enhance Yield, improve contact effect

Active Publication Date: 2017-06-06
QST CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the simultaneous fabrication of three-axis sensors cannot be realized on a single wafer / chip
[0009] In addition, in the practical application of magnetic sensors, after the formation of the magnetic material array, it is generally covered with a dielectric layer, and then an opening is made on the dielectric layer, but this step is very prone to contact problems in the opened window area. If the problem is light, it will increase the contact resistance and affect the performance of the device. If it is serious, it will cause the connection between the metal and the magnetic material to fail, causing the device to fail to work. Therefore, it is a serious problem in the manufacture of magnetic sensors.

Method used

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  • Manufacturing Process of Magnetic Sensing Device
  • Manufacturing Process of Magnetic Sensing Device
  • Manufacturing Process of Magnetic Sensing Device

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0079] The present invention discloses a manufacturing process of a magnetic sensor device. The manufacturing process is suitable for manufacturing a two-axis magnetic sensor (XY-axis magnetic sensor). The manufacturing process specifically includes the following steps:

[0080] Step S1: See Figure 6 , a dielectric material layer 102 is formed on the substrate 101; the material of the dielectric material layer can be silicon oxide or silicon nitride, and the dielectric material layer is a single-layer material or a multi-layer material. In this embodiment, the dielectric material layer 102 may be silicon oxide, a thicker silicon nitride layer, and a thinner silicon nitride layer from bottom to top.

[0081] Step S2: Then deposit the magnetic material 103 and the protective material 104, such as Figure 7 shown.

[0082] Step S3: Form a magnetic material array through exposure and etching processes, and its cross-sectional structure is as follows Figure 8 As shown, an arra...

Embodiment 2

[0090] In this embodiment, the manufacturing process of the magnetic sensing device of the present invention is suitable for manufacturing a three-axis magnetic sensor, and the manufacturing process includes a manufacturing method of a Z-axis magnetic sensing device and a manufacturing method of an XY-axis sensing device. The manufacturing method of the XY-axis magnetic sensing device is the description of the first embodiment, and the following mainly introduces the manufacturing method of the Z-axis magnetic sensing device.

[0091] The method for manufacturing the Z-axis magnetic sensor device specifically includes the following steps:

[0092] Step 1: Form a trench 202 on the substrate 201, and deposit a dielectric material to form a dielectric material layer 203. The dielectric material can be silicon oxide or silicon nitride, and the dielectric material layer is a single-layer material or a multi-layer material , such as silicon oxide, thicker silicon nitride, and thinne...

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Abstract

The invention discloses a manufacturing process of a magnetic sensing device, which includes: forming a dielectric material layer on a substrate; depositing magnetic materials and protective materials; forming an array of magnetic materials through exposure and etching processes; depositing barrier materials; and depositing conductive materials. ; Exposure and etching through the semiconductor process to form metal electrodes. Due to the protective effect of the barrier material, the metal etching process will stay above the barrier material to ensure the performance of the magnetic sensing device; remove the remaining barrier layer material between the magnetic materials; deposition The dielectric layer material is planarized with chemical mechanical polishing, and the through holes are opened through the photolithography process, a second layer of metal is deposited, and photolithography is performed to form metal connections. The invention uses a barrier layer to protect the magnetic material, avoids the use of this dielectric material layer, and can also reduce one photolithography layer and reduce costs. In addition, the process of the present invention helps to improve the contact between the metal and the magnetic material protective layer, thereby improving device performance and improving yield rate.

Description

technical field [0001] The invention belongs to the technical field of semiconductor technology and relates to a magnetic sensing device, in particular to a manufacturing process of the magnetic sensing device. Background technique [0002] According to its principle, magnetic sensors can be divided into the following categories: Hall elements, magneto-sensitive diodes, anisotropic magnetoresistance elements (AMR), tunnel junction magnetoresistance (TMR) elements and giant magnetoresistance (GMR) elements, induction coils , superconducting quantum interference magnetometer, etc. [0003] Electronic compass is one of the important application fields of magnetic sensors. With the rapid development of consumer electronics in recent years, in addition to navigation systems, more and more smart phones and tablet computers have also begun to be equipped with electronic compass as standard, bringing users In recent years, the demand for magnetic sensors has also begun to develop f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12H01L27/146G01R33/09H10N50/01
Inventor 张挺万旭东
Owner QST CORP