Organic light-emitting device and manufacturing method thereof
An electroluminescence device and electroluminescence technology, which are applied in the manufacturing of organic semiconductor devices, electric solid state devices, and semiconductor/solid state devices, etc., can solve problems such as low luminous efficiency, achieve large surface area, improve injection capacity, and facilitate transmission.
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[0036] See also figure 2 , The method for manufacturing the organic electroluminescent device 100 of an embodiment includes the following steps:
[0037] In step S110, the hole injection layer 20, the first hole transport layer 32, the first light-emitting layer 34, and the first electron transport layer 36 are prepared by evaporation on the surface of the anode in sequence.
[0038] The anode 10 is indium tin oxide glass (ITO), aluminum zinc oxide glass (AZO), or indium zinc oxide glass (IZO), preferably ITO.
[0039] In this embodiment, the anode 10 is pre-treated before the hole injection layer 20 is formed on the surface of the anode 10. The pre-treatment includes: performing photolithography treatment on the anode 10, cutting it to the required size, and using detergent and deionization. Water, acetone, ethanol, and isoacetone were each ultrasonically cleaned for 15 minutes to remove organic contaminants on the anode 10 surface.
[0040] The hole injection layer 20 is formed on ...
Embodiment 1
[0056] The structure prepared in this example is ITO / MoO 3 / TAPC / Alq 3 / TAZ / MoO 3 / FeCl 3 :ZnO / Al / NPB / Alq 3 / Bphen / LiF / Al organic electroluminescent device. Wherein, " / " means a laminated structure, and ":" means doping or mixing, and the following embodiments are the same.
[0057] Firstly, ITO is processed by photolithography and cut to the required size, followed by sonication with detergent, deionized water, acetone, ethanol, and isopropanol for 15 minutes each to remove organic contaminants on the glass surface; vapor-deposit hole injection layer , The material is MoO 3 , The thickness is 60nm; the first hole transport layer is vapor-deposited, the material is TAPC, the thickness is 35nm; the first light-emitting layer is vapor-deposited, the material is Alq 3 , The thickness is 15nm; the first electron transport layer is vapor-deposited, the material is TAZ, the thickness is 200nm; the charge generation layer is prepared, and the n-type layer is MoO by vapor deposition 3 , T...
Embodiment 2
[0062] The structure prepared in this example is AZO / WO 3 / TAPC / ADN / Bphen / WO 3 / FeBr 3 :ZnO / Pr 2 O 3 :TAPC / NPB / ADN / TPBi / CsN 3 / Pt organic electroluminescent device.
[0063] First, the AZO glass substrate was used detergent, deionized water, and ultrasonic for 15 minutes to remove organic pollutants on the glass surface; the hole injection layer was prepared by evaporation, and the material was WO 3 , The thickness is 80nm; the first hole transport layer is prepared by evaporation, the material is TAPC, the thickness is 60nm; the first light-emitting layer is prepared by evaporation, the material is ADN, the thickness is 5nm; the first electron transport layer is prepared by evaporation, the material is Bphen, the thickness is 200nm; the charge generation layer is prepared, and the n-type layer prepared by evaporation is WO 3 , The thickness is 10nm, the material of the intermediate layer prepared by electron beam evaporation is FeBr 3 :ZnO, FeBr 3 The mass ratio to ZnO is 1:20, th...
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