Organic electroluminescent device and preparation method thereof
An electroluminescent device and a luminescent technology, applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low luminous efficiency, achieve good film-forming performance, improve luminous efficiency, injection and transmission The effect of ability improvement
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[0036] Please also see figure 2 , the preparation method of the organic electroluminescent device 100 of an embodiment, it comprises the following steps:
[0037] Step S110 , sequentially vapor-depositing the hole injection layer 20 , the first hole transport layer 32 , the first light emitting layer 34 and the first electron transport layer 36 on the surface of the anode.
[0038] The anode 10 is indium tin oxide glass (ITO), aluminum zinc oxide glass (AZO) or indium zinc oxide glass (IZO), preferably ITO.
[0039] In this embodiment, before the hole injection layer 20 is formed on the surface of the anode 10, the anode 10 is pretreated. The pretreatment includes: performing photolithography on the anode 10, cutting it into the required size, using detergent, deionized Water, acetone, ethanol, and isopropanone were each ultrasonically cleaned for 15 minutes to remove organic pollutants on the surface of the anode 10 .
[0040] The hole injection layer 20 is formed on the s...
Embodiment 1
[0056] The structure prepared in this example is ITO / MoO 3 / TAPC / Alq 3 / TPBI / PC61BM:NPB:Ta 2 o 5 / NPB / Alq 3 / TPBI / Cs 2 CO 3 / Ag organic electroluminescent device Wherein, " / " indicates a stacked structure, ":" indicates doping or mixing, and the following embodiments are the same.
[0057] First carry out photolithography treatment on ITO, cut it into the required size, and then use detergent, deionized water, acetone, ethanol, and isopropanol to sonicate for 15 minutes each to remove organic pollutants on the glass surface; evaporate the hole injection layer , the material is MoO 3 , the thickness is 40nm; evaporate the first hole transport layer, the material is TAPC, the thickness is 40nm; evaporate the first light-emitting layer, the material is Alq 3 , with a thickness of 10nm; the vapor-deposited first electron transport layer, the material is TPBI, and the thickness is 100nm; the vapor-deposited charge generation layer is made of PC61BM:NPB:Ta 2 o 5 , the charg...
Embodiment 2
[0062] The structure prepared in this example is AZO / WO 3 / TAPC / ADN / TAZ / C60:TCTA:Nb 2 o 5 / TCTA / ADN / Bphen
[0063] / Cs 3 / Pt organic electroluminescent devices.
[0064] First, the AZO glass substrate was washed with detergent, deionized water, and ultrasonic for 15 minutes to remove organic pollutants on the glass surface; the hole injection layer was prepared by evaporation, and the material was WO 3 , the thickness is 80nm; the first hole transport layer is prepared by evaporation, the material is TAPC, and the thickness is 60nm; the first light-emitting layer is prepared by evaporation, the material is ADN, and the thickness is 5nm; the first electron transport layer is prepared by evaporation, and the material is TAZ, the thickness is 200nm; the vapor deposition charge generation layer material is C60:TCTA:Nb 2 o 5 , the charge generation layer thickness is 30nm, C60 and Nb 2 o 5 The mass ratio of TCTA to Nb is 1:2 2 o 5 The mass ratio is 1:10; the second hole t...
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