Preparation method for graphene quantum dot film

A technology of graphene quantum dots and thin films, which is applied in the field of nanomaterials, can solve problems such as the lack of preparation methods for graphene quantum dot thin films, and achieve the effects of good electrical conductivity, uniform thickness, and wide application prospects

Active Publication Date: 2015-01-21
CHANGCHUN UNIV OF TECH
View PDF5 Cites 80 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is still a lack of preparation methods for graphene quantum dot films.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for graphene quantum dot film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] The present invention will be further described below in conjunction with the examples, but the present invention is not limited.

[0014] Take 2 g of graphite powder and 2 g of lithium nitrate in a beaker, add 100 mL of 98% concentrated sulfuric acid under ice bath conditions, slowly add 12 g of potassium permanganate, stir and react at different temperatures for a period of time, the solution turns brown , add 400 mL of distilled water to dilute, slowly add an appropriate amount of 30% hydrogen peroxide to obtain a bright yellow solution (GO), filter while hot, wash the filter cake with NaOH solution, adjust the pH to 7-8, and adjust to neutral with dilute HCl, The precipitate was obtained by centrifugation, and dried in an oven at 45 °C for 48 h to obtain graphite oxide.

[0015] Add 0.5 g of graphite oxide to 5 mL of DMSO, move it to a microwave hydrothermal reactor (50 mL) lined with polytetrafluoroethylene, seal it and place it in a microwave-assisted hydrothermal...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A disclosed preparation method for a graphene quantum dot film comprises the following concrete steps; employing a modified Hummers process to prepare graphite oxide; dispersing graphite oxide in a dispersant, and using a microwave-assisted solvothermal process to prepare graphene quantum dot; and dropwise adding the graphene quantum dot solution on a liner, and performing spinning coating to obtain the graphene quantum dot film. The method is cheap in raw material, simple in equipment and convenient to operate; the obtained graphene quantum dot is good in solubility and uniform in dimension; and the graphene quantum dot film is uniform in thickness and good in electric conductivity, and has considerable application prospect on the aspect of solar cells.

Description

technical field [0001] The invention belongs to the field of nanometer materials, and in particular relates to a method for preparing a graphene quantum dot film by spin coating. Background technique [0002] Graphene is a hexagonal lattice-like two-dimensional planar film formed by carbon atoms with sp2 hybrid orbitals. Because of its special lattice structure, the mobility of electrons and holes in graphene is infinitely close to infinity. Graphene Therefore, it has good electrical conductivity, mechanical properties and thermal properties, so it has high potential value in the fields of energy and information. However, graphene is a zero-bandgap semiconductor material, and its application in the field of optoelectronics is limited. How to open the energy band of graphene? There are two main techniques, one is chemical doping; the other is the introduction of quantum confinement effects. [0003] Graphene quantum dots are zero-dimensional graphene materials. Its size is...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 王丽娟邹凤君都昊李一平
Owner CHANGCHUN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap