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High-efficiency class-F and inverse class-F power amplifier

A power amplifier and circuit technology, applied in power amplifiers, improving amplifiers to improve efficiency, etc., can solve the problems that the transistor model does not consider the influence of package capacitance, does not consider the influence of package parasitic capacitance, etc., to reduce complexity, reduce influence, circuit simple structure

Inactive Publication Date: 2015-01-21
TIANJIN UNIV
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Problems solved by technology

However, in practice, the nominal values ​​of capacitance and inductance provided by manufacturers are discrete, which brings certain limitations to the design, and the transistor model in the paper does not consider the impact of package capacitance
Patent [4] proposes a technique of using two microstrip lines in series to compensate parasitic parameters of transistors, but this technique is only for the design of inverse class F power amplifiers, and the influence of package parasitic capacitance is not considered in the transistor model

Method used

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  • High-efficiency class-F and inverse class-F power amplifier
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  • High-efficiency class-F and inverse class-F power amplifier

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Embodiment Construction

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the accompanying drawings that need to be used in the description of the embodiments and the prior art. Obviously, the accompanying drawings described below are only These are some embodiments of the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.

[0029] For an ideal class F power amplifier, the drain voltage of the transistor is composed of odd harmonics, which is a square wave in the time domain, while the drain current is composed of even harmonics, which is a half sine wave in the time domain. And the voltage waveform does not overlap with the current waveform, as shown in Fig. 1(a), the schematic diagram of the current-voltage waveform at the drain output terminal of the F-class transistor. Thus, the power consumption of the transisto...

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Abstract

The invention discloses a high-efficiency class-F and inverse class-F power amplifier. A transistor, a parasitic compensation circuit, a harmonic control circuit and an output fundamental wave impedance matching circuit are included. The harmonic control circuit is located between the parasitic compensation circuit and the output fundamental wave impedance matching circuit, and the parasitic compensation circuit is located between the transistor and the harmonic control circuit. As for a fixed work frequency, the input end of the harmonic control circuit forms a second harmonic short dot and a third harmonic open-circuit dot, the harmonic control circuit is composed of three micro-strips, and the parasitic compensation circuit is composed of an L-type micro-strip structure. A parasitic component compensation function can be achieved by adjusting electric length parameters of a micro-strip in the parasitic compensation circuit, and meanwhile drain electrode impedance conditions of the class-F and inverse class-F power amplifier can be achieved. By means of the class-F and inverse class-F power amplifier, influences of the parasitic component on the harmonic control circuit can be effectively reduced, precise control of second harmonics and the third harmonics is achieved, and work efficiency of the power amplifier is improved.

Description

technical field [0001] The invention relates to the technical field of wireless communication power amplifiers, in particular to high-efficiency class F / inverse class F power amplifiers. Background technique [0002] At present, the rapid development of mobile communication services has put forward higher requirements for device design with low energy consumption and high efficiency. The RF power amplifier is precisely the module that consumes the most energy in the wireless transmitting terminal. Therefore, the efficiency of the power amplifier directly determines the energy consumption level of the entire transmitting terminal. Therefore, improving the working efficiency of power amplifiers has become a hot spot in the field of power amplifier research. [0003] Class F / Inverse Class F power amplifiers have received a lot of attention due to their ideal operating efficiency of 100%. A general Class F power amplifier consists of several modules connected in turn, includi...

Claims

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Application Information

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IPC IPC(8): H03F3/20H03F1/02
Inventor 马建国朱守奎成千福
Owner TIANJIN UNIV
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