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Organic silicon potting adhesive containing POSS group and preparation method of organic silicon potting adhesive

A technology of silicone potting glue and phenyl silicone, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of easy yellowing, large internal stress of epoxy resin, and reduced light transmission, and achieve high refraction The effect of increasing the rate, increasing the cross-linking point, and improving the heat resistance

Inactive Publication Date: 2015-02-04
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Epoxy resin has large internal stress, easy yellowing, poor high and low temperature resistance, and poor aging resistance
Silicone material has small internal stress, good yellowing resistance, high and low temperature resistance, and its comprehensive performance is obviously better than epoxy resin, but it has the disadvantages of low thermal conductivity and lower refractive index than epoxy resin
Although these defects can be made up by adding inorganic oxides or nitrides, the light transmittance will be greatly reduced with the addition of inorganic fillers, so looking for a method that can not only introduce inorganic fillers but also overcome the agglomeration and phase separation of inorganic particles became the key

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Preparation of Component A

[0028] Tetramethylammonium hydroxide aqueous solution and tetramethylphenylcyclotetrasiloxane were placed in a round-bottomed flask at a mass ratio of 1:50, heated to 65°C under reduced pressure, and dehydrated for 3 h to obtain (Me ) 4 Homogeneous transparent oil with NOH content about 2 wt% (Me) 4 NOH silicon alkoxide (alkali gel), packed in a bottle for later use.

[0029] Weigh 2.64 g of dimethyldimethoxysilane and 4.88 g of diphenyldimethoxysilane into a three-necked flask, add 0.72 g of deionized water and 20 mL of toluene, and pass N 2 protection, heated to 80°C, and then dropped 0.5 g (Me) 4 NOH silicon alkoxide, heated up to 100°C for 6 h, then heated up to 155°C to decompose tetramethylammonium hydroxide and distilled off solvent and small molecular impurities at this temperature under reduced pressure, finally obtained colorless and transparent methyl Phenyl vinyl polysiloxane.

[0030] (2) Preparation of Component B

[...

Embodiment 2

[0036] (1) Preparation of Component A

[0037] Tetramethylammonium hydroxide aqueous solution and tetramethylphenylcyclotetrasiloxane were placed in a round-bottomed flask at a mass ratio of 1:50, heated to 65°C under reduced pressure, and dehydrated for 3 h to obtain (Me ) 4 Homogeneous transparent oil with NOH content about 2 wt% (Me) 4 NOH silicon alkoxide (alkali gel), packed in a bottle for later use.

[0038] Weigh 5.28 g of dimethyldimethoxysilane and 9.76 g of diphenyldimethoxysilane into a three-necked flask, add 1.44 g of deionized water and 50 mL of toluene, and pass N 2 protection, heated to 60°C, and then dropped 0.5 g (Me) 4 For NOH silicon alkoxide, heat up to 80°C for 6 hours, then heat up to 165°C to decompose tetramethylammonium hydroxide and distill off the solvent and small molecular impurities at this temperature under reduced pressure to obtain a colorless and transparent phenyl Vinyl polysiloxane.

[0039] (2) Preparation of Component B

[0040]Wei...

Embodiment 3

[0045] (1) Preparation of Component A

[0046] Tetramethylammonium hydroxide aqueous solution and tetramethylphenylcyclotetrasiloxane were placed in a round-bottomed flask at a mass ratio of 1:60, heated to 65°C under reduced pressure, and dehydrated for 3 h to obtain (Me ) 4 Homogeneous transparent oil with NOH content about 2.3 wt% (Me) 4 NOH silicon alkoxide (alkali gel), packed in a bottle for later use.

[0047] Weigh 10.56 g of dimethyldimethoxysilane and 9.76 g of diphenyldimethoxysilane into a three-necked flask, add an appropriate amount of deionized water and 100 mL of toluene, and pass N 2 protection, heated to 60°C, and then dropwise added 1.5 g (Me) 4 For NOH silicon alkoxide, heat up to 80°C for 6 hours, then raise the temperature to 170°C to decompose tetramethylammonium hydroxide and distill off the solvent and small molecular impurities at this temperature under reduced pressure to obtain a colorless and transparent phenyl Vinyl polysiloxane.

[0048] (2)...

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Abstract

The invention relates to an organic silicon potting adhesive containing a POSS (polysilsesquioxane) group and a preparation method of the organic silicon potting adhesive. The organic silicon potting adhesive comprises a component A and a component B and is characterized in that the component A is formed by a POSS-phenyl organosilicon polymer and excessive hydrogen-terminated methyl phenyl polysiloxane which is not involved in the reaction, wherein the POSS-phenyl organosilicon polymer is formed by hydrosilylation to graft hydrogen-terminated methyl phenyl polysiloxane by taking polysiloxane cage octavinyl polysilsesquioxane as a main chain; the component B is methyl phenyl vinyl polysiloxane. By virtue of the phenyl of phenyl vinyl polysiloxane in the component A of the potting adhesive, the high refractive index of the material is ensured; by virtue of an introduced organic polysiloxane system, the heat resistance of the material is improved, the number of cross-linking points is increased and the refractive index of the material is increased; meanwhile, by virtue of phenyl polysiloxane matrix, the high refractive index of the material is ensured; the transparent organic silicon material with high heat resistance and high refractive index can be applied to encapsulation of HB-LED.

Description

technical field [0001] The invention relates to a silicone potting glue and a preparation method thereof. In particular, a POSS-based silicone potting compound and a preparation method thereof. technical background [0002] Light-emitting diodes (LEDs) are called "fourth-generation light sources", especially the successful development of high-brightness light-emitting diodes (HB-LEDs), which makes semiconductor lighting partially replace incandescent lamps and fluorescent lamps a reality. In addition to the characteristics of ordinary LEDs, HB-LED has higher brightness, higher power and wider application fields. However, its appearance puts forward higher requirements on the heat resistance and refractive index of the packaging material. At present, LED packaging materials mainly include epoxy resin and silicone materials. Epoxy resin has large internal stress, easy yellowing, poor high and low temperature resistance, and poor aging resistance. Silicone material has low ...

Claims

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Application Information

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IPC IPC(8): C08G77/442C08G77/20C08G77/12C08G77/06C08L83/10C08L83/07C08L83/05H01L33/56
Inventor 贺英何超奇曹雨王鑫楠沈悦王均安
Owner SHANGHAI UNIV
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