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Method for preparing high quality nitrides

A nitride, high-quality technology, applied in chemical instruments and methods, from chemical reactive gases, semiconductor/solid-state device manufacturing, etc., can solve problems such as unfavorable large-scale production, harsh environmental requirements, and complex processes, and achieve low cost The effect of growth, good material quality and simple process

Inactive Publication Date: 2015-02-04
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims to solve the technical problems of the existing "lateral epitaxy" with complex process, harsh environmental requirements, secondary epitaxy, high cost, and unfavorable for large-scale production, and provides a method for preparing high-quality nitrides

Method used

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  • Method for preparing high quality nitrides
  • Method for preparing high quality nitrides

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Experimental program
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Effect test

Embodiment 1

[0021] see figure 1 : This figure is a flowchart of the method for growing high-quality GaN on Sapphire / AlN templates, including:

[0022] (1) Sapphire / AlN template is used as the substrate material, and the lattice mismatch degree is 2.4%.

[0023] If the lattice mismatch between the substrate material and the epitaxial material is too small, the interfacial stress between the substrate material and the epitaxial material is too small, making the epitaxial layer tend to grow in a quasi-two-dimensional layer, and it is impossible to achieve "in situ Lateral epitaxial growth"; if the lattice mismatch between the epitaxial material and the substrate material is too large, the epitaxial material tends to grow in three-dimensional "islands", and the "islands" are difficult to merge into films. Therefore, the lattice mismatch between the substrate material and the epitaxial material should be moderate, not too large or too small, and the lattice mismatch is 0.5%-10%. The optimum ...

Embodiment 2

[0032] Methods for growing high-quality AlGaN epitaxial layers, including:

[0033] (1) Use Sapphire / AlN template, Si / AlN template or SiC / AlN template as the substrate material.

[0034] When the AlGaN epitaxial layer is grown directly on the Sapphire / AlN template, Si / AlN template or SiC / AlN template by MOCVD method, the lattice mismatch between the AlGaN epitaxial layer and the substrate material increases with the increase of the Al composition. reduce. For the Al composition in the range of 0.2-1, the lattice mismatch between the AlGaN epitaxial layer and the Sapphire / AlN template, Si / AlN template or SiC / AlN template is about 0.5%-2.4%.

[0035] (2) AlGaN epitaxial layer is grown by metal-organic chemical vapor deposition (MOCVD). The growth temperature of AlGaN epitaxial layer increases with the increase of Al composition. Preferably, for the Al composition in the range of 0.2-1, the growth temperature of AlGaN is 1050-1300°C. The growth process of the AlGaN epitaxial ...

Embodiment 3

[0038] Methods for growing high-quality InGaN epitaxial layers, including:

[0039] (1) Using Sapphire / GaN template, Si / GaN template, SiC / GaN template, Sapphire / AlN template, Si / AlN template or SiC / AlN template as the substrate material.

[0040] When the InGaN epitaxial layer is directly grown on the Sapphire / GaN template, Si / GaN template or SiC / GaN template by MOCVD method, the lattice mismatch between the InGaN epitaxial layer and the substrate material increases with the increase of the In composition. Increase. For the In composition within the range of 0.05-1, the lattice mismatch between the InGaN epitaxial layer and the Sapphire / GaN template, Si / GaN template or SiC / GaN template is about 0.5%-10%.

[0041] When the InGaN epitaxial layer is directly grown on the Sapphire / AlN template, Si / AlN template or SiC / AlN template by MOCVD method, the lattice mismatch between the InGaN epitaxial layer and the substrate material increases with the increase of the In composition. I...

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Abstract

The invention relates to a method for preparing high quality nitrides, and belongs to the technical field of semiconductor. In the conventional epitaxial lateral overgrowth process, the technology is complicated, the environment requirement is high, secondary epitaxial overgrowth is required, the cost is high, and the massive production is difficult, and in order to solve the problems mentioned above, the invention provides the method. The method comprises the following steps: (1) selecting a substrate material; (2) using a metal organic chemical vapor deposition (MOCVD) technology to directly grow epitaxial material; wherein the crystal lattice mismatch degree between the substrate material and the epitaxial material is 0.5% to 10%. High quality nitrides with low dislocation density can be grown at one time, and the provided method has the advantages of simple technology, short growth period, and good material quality. An effective method is provided to grow high quality and low cost nitride materials, and a basis is provided for high performance nitride electronic devices and microelectronic devices.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing high-quality nitrides with low cost and simple process. Background technique [0002] Group III nitrides are typical representatives of the third-generation semiconductor materials. They have excellent physical and chemical properties such as direct wide band gap, light coverage from ultraviolet to infrared, and good thermal stability. They have extremely wide applications in the field of optoelectronic devices. Ideal materials for blue, green, ultraviolet and deep ultraviolet light-emitting diodes (LEDs), solar cells, ultraviolet and deep ultraviolet detectors, etc. In addition, due to the advantages of high electron saturation rate, high electron migration rate, and high breakdown electric field, nitride materials have also attracted much attention in the field of microelectronic devices. They are ideal materials for preparing high-temperature, hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/18C30B29/40C30B29/38H01L21/02
Inventor 黎大兵孙晓娟宋航蒋红李志明陈一仁缪国庆张志伟
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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