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High-temperature stable X9R type multilayer porcelain capacitor dielectric material and preparing method thereof

A capacitor dielectric and high-temperature stable technology, which is applied in the field of electronic information materials and components, can solve problems such as use restrictions, and achieve the effects of good formability, good industrialization prospects, and uniform particle size distribution

Active Publication Date: 2015-02-11
BEIJING YUANLIU HONGYUAN ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that the use of MLCCs at high temperatures is limited. Therefore, a technical problem that needs to be urgently solved is: how to innovatively develop temperature-stable dielectric materials in a wider temperature range to meet more requirements for practical applications.

Method used

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  • High-temperature stable X9R type multilayer porcelain capacitor dielectric material and preparing method thereof
  • High-temperature stable X9R type multilayer porcelain capacitor dielectric material and preparing method thereof
  • High-temperature stable X9R type multilayer porcelain capacitor dielectric material and preparing method thereof

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preparation example Construction

[0034] Further, the preparation method of the sintering aid comprises:

[0035] ZnO, H 3 BO 3 , SiO 2 and Bi 2 o 3 According to the mass fraction of 62-75wt%, 16-24wt%, 7-10wt%, 2-6wt%, after weighing, the third ball mill is mixed evenly, the third drying, the third sieving, the third calcining, A third grind is obtained again by a third sieve.

[0036] Further, the third ball milling medium is selected from one of deionized water and absolute ethanol, and the time is 6-8 hours; the temperature of the third drying is 60-80°C, and the time is 12-16 hours; The mesh number of the third sieve is 80 mesh; the temperature of the third calcining is 550-650°C, and the time is 5-6 hours; after grinding, the number of meshes of the third sieve is 120 head.

[0037] Further, the secondary material CaZrO 3 , CaTiO 3 , MgTiO 3 and SrZrO 3 The preparation methods include:

[0038] CaCO 3 and ZrO 2 , weighed at a molar ratio of 1:1, using deionized water as a medium, ball milli...

Embodiment 1

[0045] Preparation of (1-x-y-z)BaTiO 3 -xNa 0.5 Bi 0.5 TiO 3 -yK 0.5 Bi 0.5 TiO 3 -zNa 0.5 K 0.5 NbO 3 (x=0.03, y=0.02, z=0.015; x=0.02, y=0.03, z=0.02; x=0.04, y=0.03, z=0.01) shown barium titanate-bismuth sodium titanate-titanium Potassium bismuth acid-potassium sodium niobate composite, and its electrical properties at room temperature and temperature characteristics were characterized.

[0046] According to the molar ratio of 1.01:1.01:4 Bi 2 o 3 、Na 2 CO 3 and TiO 2 Mix and ball mill with absolute ethanol as medium for 10 hours, dry at 80°C for 6 hours, grind and pass through a 120-mesh sieve, put it into a crucible and pre-calcine at 960°C for 2.5 hours to obtain sodium bismuth titanate powder.

[0047] According to the molar ratio of 1.01:1.01:4 Bi 2 o 3 、K 2 CO 3 and TiO 2 Mix and ball mill with absolute ethanol as the medium for 10 hours, dry at 80°C for 6 hours, grind and pass through a 120-mesh sieve, put it into a crucible and pre-fire at 940°C f...

Embodiment 2

[0056] Preparation of (1-x-y-z) BaTiO 3 -xNa 0.5 Bi 0.5 TiO 3 -yK 0.5 Bi 0.5 TiO 3 -zNbO 3 (x=0.08, y=0, z=0.03; x=0.07, y=0.03, z=0.02; x=0.02, y=0.08, z=0.03) shown barium titanate-bismuth sodium titanate-titanium Potassium bismuth acid-potassium sodium niobate composite, and its electrical properties at room temperature and temperature characteristics were characterized.

[0057] According to the molar ratio of 1.01:1.01:4 Bi 2 o 3 、Na 2 CO 3 and TiO 2 Mix and ball mill with absolute ethanol as the medium for 10 hours, dry at 80°C for 6 hours, grind and pass through a 120-mesh sieve, put it into a crucible and pre-fire at 960°C for 2.5 hours to obtain sodium bismuth titanate powder.

[0058] According to the molar ratio of 1.01:1.01:4 Bi 2 o 3 、K 2 CO 3 and TiO 2 Mix and ball mill with absolute ethanol as the medium for 10 hours, dry at 80°C for 6 hours, grind and pass through a 120-mesh sieve, put it into a crucible and pre-fire at 940°C for 2.5 hours to o...

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Abstract

A high-temperature stable X9R type multilayer porcelain capacitor dielectric material and a preparing method thereof are disclosed. A working temperature range is broadened. The dielectric material comprises a main material, an accessory material, a modification additive and a sintering aid, wherein the main material includes BaTiO3, Na<0.5>Bi<0.5>TiO3, K<0.5>Bi<0.5>TiO3, and NatK(1-t)NbO3 in a ratio of (1-x-y-z):x:y:z, 0<=x<=0.1, 0<=y<=0.08, 0<=z<=0.08, 0<=t<=1, the accessory material comprises one or two of CaZrO3, CaTiO3, MgTiO3 and SrZrO3, the modification additive comprises one or more of Nb2O5, MnO, CeO2, Co2O3 and Sm2O3, the sintering aid is sintered by ZnO, H3BO3, SiO2 and Bi2O3, the dielectric material comprises 88-96 mol% of the main material, 3-8 mol% of the accessory material, and 1.05-4 mol% of the modification additive, and the weight of the sintering aid is 2-8 wt% of the total weight of the main material, the accessory material and the modification additive.

Description

technical field [0001] The invention relates to the technical field of electronic information materials and components, in particular to a high-temperature stable X9R type multilayer ceramic capacitor dielectric material and a preparation method thereof. Background technique [0002] With the application of electronic information terminal equipment in extreme high-temperature environments, MLCCs that can work stably under high-temperature conditions have become an urgent need. In recent years, with the popularization and wide application of electronic information equipment in all walks of life, especially in some special industries and extreme environments, higher requirements have been placed on the dielectric temperature change rate performance of MLCC. In many fields such as science, automatic electronics, and environmental testing, it is required that the electronic system can work normally under extremely harsh conditions, which requires the working temperature of the h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/468C04B35/622
CPCC04B35/468C04B2235/3229C04B2235/3234C04B2235/3236C04B2235/3248C04B2235/3251C04B2235/3255C04B2235/3262C04B2235/3275
Inventor 陈仁政杨魁勇程华容杨喻钦宋蓓蓓
Owner BEIJING YUANLIU HONGYUAN ELECTRONICS TECH