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Light emitting element and method of manufacturing same

A light-emitting element and manufacturing method technology, applied in the direction of electrical components, laser components, lasers, etc., can solve the problems of easy increase in contact resistance, no mention of the second conductive layer, etc., to suppress interference, achieve uniformity, suppress Effect of Thickness Variation

Active Publication Date: 2015-02-11
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is no mention in said Unexamined Patent Publication of the means for suppressing the removal amount of the second conductive layer from changing on the surface of the substrate.
There is such a problem that when the second electrode is formed on the mirror-finished surface of the second conductive layer, the contact resistance between the second conductive layer and the second electrode tends to increase

Method used

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  • Light emitting element and method of manufacturing same
  • Light emitting element and method of manufacturing same
  • Light emitting element and method of manufacturing same

Examples

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Embodiment 1

[0032] 2. Embodiment 1 (Light-emitting element manufacturing method according to the first embodiment of the disclosure)

Embodiment 2

[0033] 3. Embodiment 2 (light-emitting element manufacturing method according to the second embodiment of the disclosure, light-emitting element of the disclosure)

[0034] 4. Example 3 (Modifications of Example 1 and Example 2), Other General Explanations Related to Manufacturing Methods of Light-Emitting Elements According to First and Second Embodiments of the Disclosure and Light-Emitting Elements of the Disclosure

[0035] In the light-emitting element manufacturing method according to the first embodiment or the second embodiment of the disclosure, the first surface of the first compound semiconductor layer and the first surface of the first compound semiconductor layer and the second A light reflective layer or protrusions are exposed. First, the removal of the substrate used to manufacture the light-emitting element is performed by using an alkaline aqueous solution (such as an aqueous potassium hydroxide solution or an aqueous sodium hydroxide solution, an ammonia sol...

Embodiment 3

[0138] As described above, when the first compound semiconductor layer 21 is formed by performing horizontal growth using a method in which epitaxial growth is performed in the horizontal direction, such as an epitaxial lateral overgrowth (ELO) method, the first light reflection layer is formed thereon. 41 or convex portion 51 on the substrate used to manufacture the light-emitting element 11, if the first light reflecting layer 41 or the edge portion of the convex portion 51 is epitaxially grown toward the center portion of the first light reflecting layer 41 or the convex portion 51 When the compound semiconductor layers 21 meet, a large number of crystal defects occur at the meeting portion.

[0139] In the light-emitting element of Example 3 or in the manufacturing method of the light-emitting element of Example 3, the centroid of the second light reflective layer 42 is not at the point passing through the centroid of the first light reflective layer 41 relative to the firs...

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PUM

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Abstract

A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Japanese Priority Patent Application JP2013-166571 filed on Aug. 9, 2013, the entire contents of which are incorporated herein by reference. technical field [0003] The present disclosure relates to a light emitting element and a method of manufacturing the same. Background technique [0004] A surface-emitting laser element (vertical resonator laser, VCSEL) composed of a nitride semiconductor is known, for example, from Japanese Unexamined Patent Application Publication No. 2010-123921. The surface-emitting laser element disclosed in this unexamined patent publication is manufactured by forming a laminated body of a nitride semiconductor in which a second conductive layer, a light-emitting layer, and a first conductive layer are laminated on a substrate. A first black reflector formed by a dielectric multilayer film is formed on the layer, a first electrode electrically connect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/187H01S5/18
CPCH01S5/3013H01S5/18369H01S5/34333H01S5/18388H01S5/183H01S5/18361H01S5/0217H01S5/18391H01S2304/12H01S5/18311H01S5/0216H01S5/18341H01S5/0215
Inventor 滨口达史仓本大前田勇树风田川统之
Owner SONY CORP